Author: Philipp SchumacherPublisher:
ISBN:
Category :
Languages : de
Pages :
Book Description
Realization of ion mass and energy selected hyperthermal ion-beam assisted deposition of thin, epitaxial nitride films
Author: Philipp SchumacherSelected Energy Epitaxial Deposition and Low Energy Electron Microscopy of AlN, GaN, and SiC Thin Films
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 20
Book Description
As-received wafers of n- and p-type 6H-SiC(0001) were etched via gaseous HCl in H2 at 1350 deg C at NASA-Lewis to remove cutting and polishing scratches from the surface; however, etch pits were created. GaN films have been deposited on Si(100) and Al2O3(0001) substrates using triethylgallium and NH3 seeded into highly expanded He gas streams. A two-step deposition process that repeatedly resulted in continuous crystalline GaN films has been developed. The microstructure and composition of the resultant films were characterized by SEM, RHEED and AES and film character correlated to deposition conditions. Assembly of a new dual seeded beam deposition and film analysis facility is underway. In addition, the main chamber of a dual Colutron ion-beam deposition system for the deposition of high-quality SiC and GaN films is nearing completion. Ion sources have been assembled and leak-tested. Preliminary results on the characterization of a seeded supersonic molecular beam source are presented. A room temperature beam of 10% NH3 with a source pressure of 25 kTorr and a 25 micrometers nozzle produces NH3 molecules with mean energies of 0.264 eV and an energy spread of 0.068 eV. Modifications to the existing system are discussed.
Low Energy Ion Assisted Film Growth
Author: A. R. González-ElipePublisher: World Scientific Publishing Company
ISBN: 9781860943515
Category : Science
Languages : en
Pages : 283
Book Description
An introductory manual for Ion Assisted Deposition (IAD) procedures of thin films. Addressed to researchers, post-graduates and even engineers with little or no experience, the book reviews the basic concepts related to the interaction of low energy ion beams with materials.
Ion Beam Assisted Film Growth
Author: Tadatsugu ItohPublisher:
ISBN:
Category : Ion bombardment
Languages : en
Pages : 464
Book Description
Film Synthesis and Growth Using Energetic Beams: Volume 388
Author: H. A. AtwaterPublisher:
ISBN:
Category : Science
Languages : en
Pages : 472
Book Description
With over 16 countries represented, this book represents international developments in the field of film synthesis and growth using energetic beams. It focuses on pulsed-laser deposition. Fundamental issues pertaining to the generation of laser ablation plumes, temperature distributions and collisional effects are described. Ion-assisted pulsed-laser deposition, pulsed-ion deposition, applications of hyperthermal beams and aspects of surface dynamics are discussed. The inclusion of an ion beam with the ablation process leads to some unique modifications in the thin-film growth mechanisms, and hence, film properties. Likewise, the collision of high-mass metal cluster ions with substrates shows promise for growth of novel structures. Also featured are new developments of optoelectronic materials, nitrides and carbon films using a variety of techniques. The effects of beam-induced defects on growth and surface morphology, chemical effects during growth, and characterization of film growth and film properties are addressed.
Ion Beam Assisted Deposition and C-N Bond Activation Character of Molybdenum Nitride Films
Author: Mandar Shyam MudholkarPublisher:
ISBN:
Category :
Languages : en
Pages : 312
Book Description
Handbook of Ion Beam Processing Technology
Author: Jerome J. CuomoPublisher: William Andrew
ISBN:
Category : Science
Languages : en
Pages : 464
Book Description
This book, by 36 authorities on the subject, deals with ion beam processing for basic sputter etching of samples, for sputter deposition of thin films, for synthesis of material in thin film form, and of the modification of thin film properties.
Ion Beam Assisted Deposition of Biaxially Aligned Oxide Thin Films
Author: Kevin Glenn ResslerLow Energy Ion Beam Assisted Growth of Homoepitaxial Silicon Films at Low Temperature
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 4
Book Description
The goal of this project was to lower the substrate temperature required to promote device quality epitaxial silicon growth below the 300 deg C mark set by a Japanese group led by T. Ohmi. Normally high substrate temperatures are required to achieve thin film epitaxial growth. A new thin film deposition technique called ion beam assisted deposition offers the possibility to grow epitaxial layers at low substrate temperatures. In this technique, while the atoms are condensing into the epilayer, they are bombarded by low energy noble gas ions. The kinetic energy of the incident ions supplants the thermal energy lost by lowering the substrate temperature and provides enough surface mobility so that the correct crystal structure can grow. Lower temperatures will reduce impurity and interlayer diffusion problems caused by high temperature growth processing steps.
Ionized-Cluster Beam Deposition and Epitaxy
Author: Toshinori TakagiPublisher: Univ. Press of Mississippi
ISBN: 9780815511687
Category : Technology & Engineering
Languages : en
Pages : 244
Book Description
The technique of ionized-cluster beam (ICB) deposition, the fundamentals of ICB technology, and technical applications of thin films produced by ICB deposition are presented for those interested or working in the field. ICB processes are characterized, and equipment is available. The films deposited are often superior to those deposited by either evaporation or sputtering, and the range of control of the process exceeds other techniques by a great margin.