Author: S. Coffa
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 392
Book Description
Rare-earth doped semiconductors hold great potential for a variety of optoelectronic applications, including lasers, LEDs and optical amplifiers. In fact, the field has grown rapidly over the past several years, with a clear switch in direction. The first book by this name was devoted to rare-earth doped II-VI and III-V semiconductors; more than half of the papers in this new volume are devoted to rare-earth doped silicon. This indicates that rare-earth doping of silicon is now seriously considered as a means to achieve silicon-based optoelectronic devices. In addition, new reports on rare-earth doped III-nitrides are also presented. Researchers from 14 countries come together in the volume to discuss current trends, highlight new developments and identify potential electronic and optoelectronic applications. Topics include: incorporation methods and properties; structural, electrical and optical properties; excitation mechanisms and electroluminescence and integration.
Rare-Earth Doped Semiconductors II: Volume 422
Author: S. Coffa
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 392
Book Description
Rare-earth doped semiconductors hold great potential for a variety of optoelectronic applications, including lasers, LEDs and optical amplifiers. In fact, the field has grown rapidly over the past several years, with a clear switch in direction. The first book by this name was devoted to rare-earth doped II-VI and III-V semiconductors; more than half of the papers in this new volume are devoted to rare-earth doped silicon. This indicates that rare-earth doping of silicon is now seriously considered as a means to achieve silicon-based optoelectronic devices. In addition, new reports on rare-earth doped III-nitrides are also presented. Researchers from 14 countries come together in the volume to discuss current trends, highlight new developments and identify potential electronic and optoelectronic applications. Topics include: incorporation methods and properties; structural, electrical and optical properties; excitation mechanisms and electroluminescence and integration.
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 392
Book Description
Rare-earth doped semiconductors hold great potential for a variety of optoelectronic applications, including lasers, LEDs and optical amplifiers. In fact, the field has grown rapidly over the past several years, with a clear switch in direction. The first book by this name was devoted to rare-earth doped II-VI and III-V semiconductors; more than half of the papers in this new volume are devoted to rare-earth doped silicon. This indicates that rare-earth doping of silicon is now seriously considered as a means to achieve silicon-based optoelectronic devices. In addition, new reports on rare-earth doped III-nitrides are also presented. Researchers from 14 countries come together in the volume to discuss current trends, highlight new developments and identify potential electronic and optoelectronic applications. Topics include: incorporation methods and properties; structural, electrical and optical properties; excitation mechanisms and electroluminescence and integration.
岡垣町の農業
Rare-Earth Doped Semiconductors: Volume 301
Author: Gernot S. Pomrenke
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 448
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 448
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Rare Earth and Transition Metal Doping of Semiconductor Materials
Author: Volkmar Dierolf
Publisher: Woodhead Publishing
ISBN: 008100060X
Category : Science
Languages : en
Pages : 472
Book Description
Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron's electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. - Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices - Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics - Details the properties of semiconductors for spintronics
Publisher: Woodhead Publishing
ISBN: 008100060X
Category : Science
Languages : en
Pages : 472
Book Description
Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron's electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. - Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices - Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics - Details the properties of semiconductors for spintronics
Luminescence Properties of Rare Earth Doped III-V and II-VI Semiconductors
Author: Amer K. Alshawa
Publisher:
ISBN:
Category : Chemical kinetics
Languages : en
Pages : 314
Book Description
Publisher:
ISBN:
Category : Chemical kinetics
Languages : en
Pages : 314
Book Description
Rare Earth Doped Semiconductors 3
Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications
Author: Kevin Peter O'Donnell
Publisher: Springer Science & Business Media
ISBN: 9048128773
Category : Science
Languages : en
Pages : 366
Book Description
This book summarises recent progress in the science and technology of rare-earth doped nitrides, providing a snapshot of the field at a critical point in its development. It is the first book on rare-earth doped III-Nitrides and semiconductors.
Publisher: Springer Science & Business Media
ISBN: 9048128773
Category : Science
Languages : en
Pages : 366
Book Description
This book summarises recent progress in the science and technology of rare-earth doped nitrides, providing a snapshot of the field at a critical point in its development. It is the first book on rare-earth doped III-Nitrides and semiconductors.
Rare-earth-doped Devices
Author: Society of Photo-optical Instrumentation Engineers
Publisher: Society of Photo Optical
ISBN: 9780819424075
Category : Technology & Engineering
Languages : en
Pages : 214
Book Description
Publisher: Society of Photo Optical
ISBN: 9780819424075
Category : Technology & Engineering
Languages : en
Pages : 214
Book Description
Rare Earth Doped Semiconductors 2
Rare-Earth Doping of Advanced Materials for Photonic Applications: Volume 1111
Author: V. Dierolf
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 318
Book Description
This book brings together more than 100 specialists from around the world to examine the status and emerging trends in the field of rare-earth-doped materials. These materials are used and/or are potential candidates for applications as lasers, light-emitting diodes, phosphors, displays and other photonic applications. Progress in growth, doping methods, characterization and device applications are reviewed. Topics include: rare-earth doping in nitrides; rare-earth doping in silicon-related materials; mechanisms and laser materials and phosphors and scintillators.
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 318
Book Description
This book brings together more than 100 specialists from around the world to examine the status and emerging trends in the field of rare-earth-doped materials. These materials are used and/or are potential candidates for applications as lasers, light-emitting diodes, phosphors, displays and other photonic applications. Progress in growth, doping methods, characterization and device applications are reviewed. Topics include: rare-earth doping in nitrides; rare-earth doping in silicon-related materials; mechanisms and laser materials and phosphors and scintillators.