SiGe--materials, Processing, and Devices PDF Download

Author: David Louis Harame
Publisher: The Electrochemical Society
ISBN: 9781566774208
Category : Science
Languages : en
Pages : 1242

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Author: Fred Roozeboom
Publisher: The Electrochemical Society
ISBN: 9781566772327
Category : Technology & Engineering
Languages : en
Pages : 470

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Author: John D. Cressler
Publisher: CRC Press
ISBN: 1351834797
Category : Technology & Engineering
Languages : en
Pages : 373

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Book Description
What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

Author: F. Roozeboom
Publisher: Springer Science & Business Media
ISBN: 9401587116
Category : Science
Languages : en
Pages : 568

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Book Description
Rapid thermal and integrated processing is an emerging single-wafer technology in ULSI semiconductor manufacturing, electrical engineering, applied physics and materials science. Here, the physics and engineering of this technology are discussed at the graduate level. Three interrelated areas are covered. First, the thermophysics of photon-induced annealing of semiconductor and related materials, including fundamental pyrometry and emissivity issues, the modelling of reactor designs and processes, and their relation to temperature uniformity. Second, process integration, treating the advances in basic equipment design, scale-up, integrated cluster-tool equipment, including wafer cleaning and integrated processing. Third, the deposition and processing of thin epitaxial, dielectric and metal films, covering selective deposition and epitaxy, integrated processing of layer stacks, and new areas of potential application, such as the processing of III-V semiconductor structures and thin- film head processing for high-density magnetic data storage.

Author: John D. Cressler
Publisher: CRC Press
ISBN: 1420026585
Category : Technology & Engineering
Languages : en
Pages : 1249

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Book Description
An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.

Author: Michael Liehr
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 440

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Book Description
Wafer cleaning, microcontamination and surface passivation are the key focus of this proceedings volume, the 3rd in a successful series from MRS. It is a field in which control of surface chemistry and surface morphology, as well as particle and molecular contamination removal, are of critical importance. This volume expands the scope of the topic to include ultraclean technology in a broader sense, emphasizing the identification and characterization of trace contamination, strategies for removal, and equipment considerations, as well as critical limits for impact on devices. Novel processes, such as chemical mechanical polishing (CMP), and their ramifications for contamination removal are also addressed.

Author: John D. Cressler
Publisher: CRC Press
ISBN: 1420066897
Category : Technology & Engineering
Languages : en
Pages : 258

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Book Description
SiGe HBT BiCMOS technology is the obvious groundbreaker of the Si heterostructures application space. To date virtually every major player in the communications electronics market either has SiGe up and running in-house or is using someone else’s SiGe fab as foundry for their designers. Key to this success lies in successful integration of the SiGe HBT and Si CMOS, with no loss of performance from either device. Filled with contributions from leading experts, Fabrication of SiGe HBT BiCMOS Technologies brings together a complete discussion of these topics into a single resource. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume examines the design, fabrication, and application of silicon heterostructure transistors. A novel aspect of this book the inclusion of numerous snapshot views of the industrial state-of-the-art for SiGe HBT BiCMOS technology. It has been carefully designed to provide a useful basis of comparison for the current status and future course of the global industry. In addition to the copious technical material and the numerous references contained in each chapter, the book includes easy-to-reference appendices on the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

Author: Electrochemical Society. High Temperature Materials Division
Publisher: The Electrochemical Society
ISBN: 9781566771788
Category : Science
Languages : en
Pages : 1686

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Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 948

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Book Description

Author: Jimmie J. Wortman
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 472

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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.