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Author: Hwei Yin Serene Koh Publisher: Stanford University ISBN: Category : Languages : en Pages : 238
Book Description
Silicon has made modern integrated circuit technology possible. As MOSFET gate lengths are scaled to 22nm and beyond, it has become apparent that new materials must be introduced to the silicon-based CMOS process for improved performance and functionality. This dissertation begins with a review of the MOSFET leakage current problem and presents one potential solution: Band-to-Band Tunneling (BTBT) transistors, which have the potential for steeper subthreshold slopes because they do not have the fundamental 'kT/q' limit in the rate at which conventional MOSFETs can be turned on or off. It is clear that these devices must be fabricated in materials with smaller bandgaps for improved performance. Silicon Germanium (SiGe) is one possible material system that could be used to fabricate enhanced BTBT transistors. Rapid Melt Growth (RMG) is a technique that has been used to recrystallize materials on Si substrates. RMG, however, has not previously been applied to SiGe, a binary alloy with large separation in the liquidus-solidus curve in its phase diagram. The development of process and experimental results for obtaining SiGe-on-insulator (SGOI) from bulk Si substrates through RMG are presented. The theory of RMG is analyzed and compositional profiles obtained during RMG of SiGe are modeled to understand why we were able to obtain high quality lateral compositionally graded SGOI substrates. The success of RMG SiGe suggests that the RMG technique can also be applied to III-V ternary and quaternary compounds with similar pseudo-binary phase diagrams. This opens up a wide range of material possibilities with the potential for novel applications in heterogeneous integration and 3-D device technology.
Author: Hwei Yin Serene Koh Publisher: Stanford University ISBN: Category : Languages : en Pages : 238
Book Description
Silicon has made modern integrated circuit technology possible. As MOSFET gate lengths are scaled to 22nm and beyond, it has become apparent that new materials must be introduced to the silicon-based CMOS process for improved performance and functionality. This dissertation begins with a review of the MOSFET leakage current problem and presents one potential solution: Band-to-Band Tunneling (BTBT) transistors, which have the potential for steeper subthreshold slopes because they do not have the fundamental 'kT/q' limit in the rate at which conventional MOSFETs can be turned on or off. It is clear that these devices must be fabricated in materials with smaller bandgaps for improved performance. Silicon Germanium (SiGe) is one possible material system that could be used to fabricate enhanced BTBT transistors. Rapid Melt Growth (RMG) is a technique that has been used to recrystallize materials on Si substrates. RMG, however, has not previously been applied to SiGe, a binary alloy with large separation in the liquidus-solidus curve in its phase diagram. The development of process and experimental results for obtaining SiGe-on-insulator (SGOI) from bulk Si substrates through RMG are presented. The theory of RMG is analyzed and compositional profiles obtained during RMG of SiGe are modeled to understand why we were able to obtain high quality lateral compositionally graded SGOI substrates. The success of RMG SiGe suggests that the RMG technique can also be applied to III-V ternary and quaternary compounds with similar pseudo-binary phase diagrams. This opens up a wide range of material possibilities with the potential for novel applications in heterogeneous integration and 3-D device technology.
Author: Koji Yamada Publisher: Frontiers Media SA ISBN: 2889196933 Category : Engineering (General). Civil engineering (General) Languages : en Pages : 111
Book Description
Silicon photonics technology, which has the DNA of silicon electronics technology, promises to provide a compact photonic integration platform with high integration density, mass-producibility, and excellent cost performance. This technology has been used to develop and to integrate various photonic functions on silicon substrate. Moreover, photonics-electronics convergence based on silicon substrate is now being pursued. Thanks to these features, silicon photonics will have the potential to be a superior technology used in the construction of energy-efficient cost-effective apparatuses for various applications, such as communications, information processing, and sensing. Considering the material characteristics of silicon and difficulties in microfabrication technology, however, silicon by itself is not necessarily an ideal material. For example, silicon is not suitable for light emitting devices because it is an indirect transition material. The resolution and dynamic range of silicon-based interference devices, such as wavelength filters, are significantly limited by fabrication errors in microfabrication processes. For further performance improvement, therefore, various assisting materials, such as indium-phosphide, silicon-nitride, germanium-tin, are now being imported into silicon photonics by using various heterogeneous integration technologies, such as low-temperature film deposition and wafer/die bonding. These assisting materials and heterogeneous integration technologies would also expand the application field of silicon photonics technology. Fortunately, silicon photonics technology has superior flexibility and robustness for heterogeneous integration. Moreover, along with photonic functions, silicon photonics technology has an ability of integration of electronic functions. In other words, we are on the verge of obtaining an ultimate technology that can integrate all photonic and electronic functions on a single Si chip. This e-Book aims at covering recent developments of the silicon photonic platform and novel functionalities with heterogeneous material integrations on this platform.
Author: Shulu Chen Publisher: Stanford University ISBN: Category : Languages : en Pages : 186
Book Description
Since the invention of the integrated circuit (IC) in the late 1950s, the semiconductor industry has experienced dramatic growth driven by both technology and manufacturing improvements. Over the past 40 years, the industry's growth trend has been predicted by Moore's law, and driven by the constant electrical field scaling design methodology. While the intrinsic performance of each device improves over generations, the corresponding interconnects do not. To alleviate this interconnect issue, a three-dimensional (3D) integration concept of transforming longer side to side interconnects into shorter vertical vias by using multiple active layers has attracted much attention. The focus of this thesis is on providing the foundation for 3D heterogeneous integration by investigating methods of growing single crystal materials on the silicon platform and the subsequent low-temperature process flow, through experimental demonstration, theoretical modeling and device structure simplification. First, thin film single crystal GaAs and GaSb were grown on dielectric layers on bulk silicon substrates by the rapid melt growth (RMG) method, using both rapid thermal annealing (RTA) and laser annealing. The relationship between stoichiometry and the crystal structure is discussed according to the theoretical phase diagram and the experimental results. A modified RMG structure is also proposed and demonstrated to solve the potential issue involved in integrating the RMG method into a three-dimensional integrated circuits (3D-IC) process with thick isolation layers. In order to estimate the outcome of the crystallization and to provide further understanding of the physics behind this RMG process, compact models are derived based on classical crystallization theory. Mathematical models including the geometry, the thermal environment and the outcome of the crystallization are built. The initial cooling rate is identified as the key factor for the RMG process. With the ability of integrating multiple materials on silicon substrates, the subsequent process flows using low-temperature-fabrication or simplified device structures are proposed and evaluated to achieve high density 3D integration. A "bonding substrate/monolithic contact" approach is proposed to relieve the thermal constraint from getting the starting single crystal layer without sacrificing the interconnect performance. A low-temperature process using germanium as the channel material is also discussed. Finally, gated thin film resistor structures are designed and compared to the conventional MOSFET structure with a focus on their relative performance and process complexity trade-off for future 3D-IC implementation.
Author: Serge Luryi Publisher: John Wiley & Sons ISBN: 0470168250 Category : Technology & Engineering Languages : en Pages : 476
Book Description
In this book leading profesionals in the semiconductor microelectronics field discuss the future evolution of their profession. The following are some of the questions discussed: Does CMOS technology have a real problem? Do transistors have to be smaller or just better and made of better materials? What is to come after semiconductors? Superconductors or molecular conductors? Is bottom-up self-assembling the answer to the limitation of top-down lithography? Is it time for Optics to become a force in computer evolution? Quantum Computing, Spintronics? Where is the printable plastic electronics proposed 10 years ago? Are carbon nanotube transistors the CMOS of the future?
Author: Golla Eranna Publisher: CRC Press ISBN: 1482232812 Category : Science Languages : en Pages : 432
Book Description
Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemically inert and stable, but growing it as a single crystal creates many technological challenges. Crystal Growth and Evaluation of Silicon for VLSI and ULSI is one of the first books to cover the systematic growth of silicon single crystals and the complete evaluation of silicon, from sand to useful wafers for device fabrication. Written for engineers and researchers working in semiconductor fabrication industries, this practical text: Describes different techniques used to grow silicon single crystals Explains how grown single-crystal ingots become a complete silicon wafer for integrated-circuit fabrication Reviews different methods to evaluate silicon wafers to determine suitability for device applications Analyzes silicon wafers in terms of resistivity and impurity concentration mapping Examines the effect of intentional and unintentional impurities Explores the defects found in regular silicon-crystal lattice Discusses silicon wafer preparation for VLSI and ULSI processing Crystal Growth and Evaluation of Silicon for VLSI and ULSI is an essential reference for different approaches to the selection of the basic silicon-containing compound, separation of silicon as metallurgical-grade pure silicon, subsequent purification, single-crystal growth, and defects and evaluation of the deviations within the grown crystals.
Author: Lars Rebohle Publisher: ISBN: 9783030233006 Category : Materials science Languages : en Pages : 304
Book Description
This book provides a comprehensive survey of the technology of flash lamp annealing (FLA) for thermal processing of semiconductors. It gives a detailed introduction to the FLA technology and its physical background. Advantages, drawbacks and process issues are addressed in detail and allow the reader to properly plan and perform their own thermal processing. Moreover, this books gives a broad overview of the applications of flash lamp annealing, including a comprehensive literature survey. Several case studies of simulated temperature profiles in real material systems give the reader the necessary insight into the underlying physics and simulations. This book is a valuable reference work for both novice and advanced users.
Author: Hwei Yin Serene Koh
Author: Hwei Yin Serene Koh
Author: Koji Yamada
Author: Shulu Chen
Author: Serge Luryi
Author: 
Author: Golla Eranna
Author: Q. Liu
Author: 
Author: Lars Rebohle
Author: