Author: Hendrik J. GerritsenPublisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 57
Book Description
Rapid Liquid Phase Epitaxial Growth Studies of GaAs
Author: Hendrik J. GerritsenPublisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 57
Book Description
Current Controlled Liquid Phase Epitaxial Growth of GaAs
Author: Salem Omar IssaPublisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 72
Book Description
LIQUID PHASE EPITAXIAL GROWTH OF Ga1) Al As-GaAs HETEROSTRUCTURES.
Author: Liquid Phase Epitaxial Growth of GaAs
Author: Dawnelle Ivy WynneLiquid-Phase Epitaxial Growth of III-V Compound Semiconductor Materials and Their Device Applications,
Author: M. G. AstlesPublisher: CRC Press
ISBN:
Category : Art
Languages : en
Pages : 240
Book Description
An introduction to the basic principles of the technique of liquid-phase epitaxy (LPE) as applied to the growth of the III-V family of compounds.
Epitaxy
Author: Marian A. HermanPublisher: Springer Science & Business Media
ISBN: 9783540678212
Category : Science
Languages : en
Pages : 546
Book Description
In a uniform and comprehensive manner the authors describe all the important aspects of the epitaxial growth processes of solid films on crystalline substrates, e.g. processes in which atoms of the growing film mimic the arrangement of the atoms of the substrate. Emphasis is put on sufficiently fundamental and unequivocal presentation of the subject in the form of an easy-to-read review. A large part of this book focuses on the problems of heteroepitaxy. The most important epitaxial growth techniques which are currently widely used in basic research as well as in manufacturing processes of devices are presented and discussed in detail.
Energy Research Abstracts
Author: Liquid Phase Epitaxial Growth of GaAs
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 177
Book Description
Research into new semiconductor materials for measurement of electromagnetic radiation over a wide range of energies has been an active field for several decades. There is a strong desire to identify and develop new materials which can lead to improved detectors. Such devices are expected to solve problems that cannot be solved using the semiconductor materials and device structures which have been traditionally used for radiation detection. In order for a detector which is subjected to some type of irradiation to respond, the radiation must undergo an interaction with the detector. The net result of the radiation interaction in a broad category of detectors is the generation of mobile electric charge carriers (electrons and/or holes) within the detector active volume. This charge is collected at the detector contacts and it forms the basic electrical signal. Typically, the collection of the charge is accomplished through the imposition of an electric field within the detector which causes the positive and/or negative charges created by the radiation to flow in opposite directions to the contacts. For the material to serve as a good radiation detector, a large fraction (preferably 100%) of all carriers created by the interacting incident radiation must be collected. Charge trapping by deep level impurities and structural defects can seriously degrade detector performance. The focus of this thesis is on far infrared and X-ray detection. In X-ray detector applications of p-I-n diodes, the object is to measure accurately the energy distribution of the incident radiation quanta. One important property of such detectors is their ability to measure the energy of individual incident photons with high energy resolution.
Energy Research Abstracts
Author: Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 908
Book Description
Includes all works deriving from DOE, other related government-sponsored information and foreign nonnuclear information.
Control of Impurities in the Epitaxial Growth of High Quality GaAs
Author: David A. StevensonPublisher:
ISBN:
Category :
Languages : en
Pages : 17
Book Description
A research program is described on the topic of impurity incorporation during the growth of GaAs epitaxial layers. The major portion of the research was the design, construction, and characterization of a molecular beam mass spectrometry (MBMS) system and its use as a diagnostic analytical tool to evaluate typical gaseous environments used in the growth of III-V single crystal layers. The fundamental gas dynamics of the MBMS sampling process were studied as well as the limitations and correction factors for this technique. Two crystal growth environments were analyzed: a liquid phase epitaxial (LPE) GaAs growth system; and an organometallic vapor phase epitaxy (OMVPE) system. In the former system, it was shown that there are significant concentrations of O, C, Si gaseous species in the gas ambient which appear to be the major potential impurities. For OMVPE, two topics were emphasized: the side reactions of the organometallic (OM) reactants, particularly those involving oxygen containing species; and the graphite-OM interaction.