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Quantum Hall Effect in Graphene/transition Metal Dichalcogenide Spin-orbit System

Quantum Hall Effect in Graphene/transition Metal Dichalcogenide Spin-orbit System PDF Author: Dongying Wang (Ph. D. in physics)
Publisher:
ISBN:
Category : Graphene
Languages : en
Pages : 0

Book Description
Van der Waals heterostructure based on stacking two dimensional materials gives rise to new possibilities for engineering multifunctional electronic and spintronic systems. While combining the merits of individual layers, heterostructures provide a platform for studying the interfacial interactions. In particular, significant effort has been made to increase the spin-orbit coupling in graphene by coupling it to transition metal dichalcogenides towards realizing topological electronic ground states. In this thesis, using quantum Hall measurements as a precise probe, we investigate the induced spin-orbit coupling (SOC) in graphene by the proximity to transition metal dichalcogenides (TMDCs) to achieve two main objectives: " Obtain signatures of an enhanced SOC in graphene by proximity to a semiconducting TMDC using quantum Hall measurements." Study the modification that SOC brings into the graphene quantum Hall system, together with other striking interactions, such as Coulomb interaction, exchange coupling and superconducting correlation, which would be building blocks for engineering a graphene-based multifunctional system. To achieve such objectives, many efforts have been devoted to fabricating carefully designed samples, adapting and proposing experimental protocols based on quantum Hall measurements, and in the analysis and modeling of the signals. This thesis is organized as following: Chapter 1 briefly introduces the background of graphene and proximity induced SOC in graphene/TMDCs heterostructure and quantum Hall effect. In Chapter 2, we present the main experimental method of device fabrication and characterization. Here, we will talk about the process of fabricating graphene/TMDCs van der Waals heterostructure with ultra-clean interface, and further introduce some basic idea in electrical transport measurements. In Chapter 3, we demonstrate enhanced SOC in bilayer graphene on WSe2 by quantum Hall measurements. We will show distinct Landau level crossing pattern in this system under a tunable displacement field over a wide range of carrier density. Within the single particle model, we isolate and quantify the Ising SOC and Rashba SOC strength and further bring up the effects of Coulomb interaction. To further study the interplay of Coulomb interaction with induced SOC in the quantum Hall system, we study a monolayer graphene on WSe2 system with in a Hartree- Fock model. In Chapter 4, we show the experimental details and theoretical analysis. The effective dielectric constant as well as the SOC parameters are extracted based on the model, showing consistency with previous work. In addition, a canted anti-ferromagnetic state to ferromagnetic state phase transition at n = 0 LL takes place at low field thanks to the presence of SOC. In Chapter 5, we move one more step forward by bringing exchange coupling into the spin-orbit system, towards realizing helical edge states. The introduction of Cr2Ge2Te6 enable us to directly probe the energy spectrum. We observe clear modifications in graphene's Landau level structure caused by proximity-induced spin- orbit coupling and exchange coupling, which are qualitatively in agreement with the single particle model. In addition, we also show our efforts towards topological superconducting states by introducing superconducting correlation in the graphene/TMDCs system. Premilitary results and proposals of further experiments are shown in Appendix D

Quantum Hall Effect in Graphene/transition Metal Dichalcogenide Spin-orbit System

Quantum Hall Effect in Graphene/transition Metal Dichalcogenide Spin-orbit System PDF Author: Dongying Wang (Ph. D. in physics)
Publisher:
ISBN:
Category : Graphene
Languages : en
Pages : 0

Book Description
Van der Waals heterostructure based on stacking two dimensional materials gives rise to new possibilities for engineering multifunctional electronic and spintronic systems. While combining the merits of individual layers, heterostructures provide a platform for studying the interfacial interactions. In particular, significant effort has been made to increase the spin-orbit coupling in graphene by coupling it to transition metal dichalcogenides towards realizing topological electronic ground states. In this thesis, using quantum Hall measurements as a precise probe, we investigate the induced spin-orbit coupling (SOC) in graphene by the proximity to transition metal dichalcogenides (TMDCs) to achieve two main objectives: " Obtain signatures of an enhanced SOC in graphene by proximity to a semiconducting TMDC using quantum Hall measurements." Study the modification that SOC brings into the graphene quantum Hall system, together with other striking interactions, such as Coulomb interaction, exchange coupling and superconducting correlation, which would be building blocks for engineering a graphene-based multifunctional system. To achieve such objectives, many efforts have been devoted to fabricating carefully designed samples, adapting and proposing experimental protocols based on quantum Hall measurements, and in the analysis and modeling of the signals. This thesis is organized as following: Chapter 1 briefly introduces the background of graphene and proximity induced SOC in graphene/TMDCs heterostructure and quantum Hall effect. In Chapter 2, we present the main experimental method of device fabrication and characterization. Here, we will talk about the process of fabricating graphene/TMDCs van der Waals heterostructure with ultra-clean interface, and further introduce some basic idea in electrical transport measurements. In Chapter 3, we demonstrate enhanced SOC in bilayer graphene on WSe2 by quantum Hall measurements. We will show distinct Landau level crossing pattern in this system under a tunable displacement field over a wide range of carrier density. Within the single particle model, we isolate and quantify the Ising SOC and Rashba SOC strength and further bring up the effects of Coulomb interaction. To further study the interplay of Coulomb interaction with induced SOC in the quantum Hall system, we study a monolayer graphene on WSe2 system with in a Hartree- Fock model. In Chapter 4, we show the experimental details and theoretical analysis. The effective dielectric constant as well as the SOC parameters are extracted based on the model, showing consistency with previous work. In addition, a canted anti-ferromagnetic state to ferromagnetic state phase transition at n = 0 LL takes place at low field thanks to the presence of SOC. In Chapter 5, we move one more step forward by bringing exchange coupling into the spin-orbit system, towards realizing helical edge states. The introduction of Cr2Ge2Te6 enable us to directly probe the energy spectrum. We observe clear modifications in graphene's Landau level structure caused by proximity-induced spin- orbit coupling and exchange coupling, which are qualitatively in agreement with the single particle model. In addition, we also show our efforts towards topological superconducting states by introducing superconducting correlation in the graphene/TMDCs system. Premilitary results and proposals of further experiments are shown in Appendix D

Charge and Spin Transport in Disordered Graphene-Based Materials

Charge and Spin Transport in Disordered Graphene-Based Materials PDF Author: Dinh Van Tuan
Publisher: Springer
ISBN: 3319255711
Category : Science
Languages : en
Pages : 162

Book Description
This thesis presents an in-depth theoretical analysis of charge and spin transport properties in complex forms of disordered graphene. It relies on innovative real space computational methods of the time-dependent spreading of electronic wave packets. First a universal scaling law of the elastic mean free path versus the average grain size is predicted for polycrystalline morphologies, and charge mobilities of up to 300.000 cm2/V.s are determined for 1 micron grain size, while amorphous graphene membranes are shown to behave as Anderson insulators. An unprecedented spin relaxation mechanism, unique to graphene and driven by spin/pseudospin entanglement is then reported in the presence of weak spin-orbit interaction (gold ad-atom impurities) together with the prediction of a crossover from a quantum spin Hall Effect to spin Hall effect (for thallium ad-atoms), depending on the degree of surface ad-atom segregation and the resulting island diameter.

Introducing Spin-orbit Interaction in Graphene

Introducing Spin-orbit Interaction in Graphene PDF Author: Jun Yong Khoo
Publisher:
ISBN:
Category :
Languages : en
Pages : 146

Book Description
The excellent electron properties of graphene, an atomically-thin material with record-high carrier mobility and gate tunability, make it central to modern nanoscience. However, the spin-orbit interaction (SOI) naturally present in graphene is extremely weak and has yet to be observed experimentally. This presents an obstacle for accessing novel phenomena in transport and optics, in particular those related to topological properties. This thesis seeks to address this limitation by artificially introducing SOI in graphene sandwiched between other atomically-thin materials that can produce an interfacial SOI in graphene. In particular, it is demonstrated that a strong SOI, naturally present in the two-dimensional materials such as transition metal dichalcogenides (TMD), can be partially transferred to graphene via the proximity effect. We predict a range of novel phenomena arising in graphene bilayers with layer-asymmetric SOI induced by a proximal TMD layer. These include a gate-tunable SOI, a gate-tunable intrinsic valley-Hall conductivity, as well as a gate-tunable edge conductivity, to name just a few. These findings will facilitate exploring previously inaccessible spin-related phenomena in graphene and other van der Waals heterostructures.

Introduction to Graphene-Based Nanomaterials

Introduction to Graphene-Based Nanomaterials PDF Author: Luis E. F. Foa Torres
Publisher: Cambridge University Press
ISBN: 1107030838
Category : Science
Languages : en
Pages : 425

Book Description
A detailed primer describing the most effective theoretical and computational methods and tools for simulating graphene-based systems.

Spin-orbit Coupling in Graphene and Transition Metal Dichalcogenides

Spin-orbit Coupling in Graphene and Transition Metal Dichalcogenides PDF Author: Bowen Yang
Publisher:
ISBN: 9780355754537
Category : Graphene
Languages : en
Pages : 110

Book Description
The first part briefly introduces graphene and SOC. We present possible ways to increase the SOC in graphene and how to quantify its strength. The second part shows the procedures on how to build a van der Waals heterostructure like graphene/WSe2/h-BN, followed by introductions to Raman and photoluminescence (PL).

Spin Dynamics in Two-Dimensional Quantum Materials

Spin Dynamics in Two-Dimensional Quantum Materials PDF Author: Marc Vila Tusell
Publisher: Springer Nature
ISBN: 3030861147
Category : Technology & Engineering
Languages : en
Pages : 169

Book Description
This thesis focuses on the exploration of nontrivial spin dynamics in graphene-based devices and topological materials, using realistic theoretical models and state-of-the-art quantum transport methodologies. The main outcomes of this work are: (i) the analysis of the crossover from diffusive to ballistic spin transport regimes in ultraclean graphene nonlocal devices, and (ii) investigation of spin transport and spin dynamics phenomena (such as the (quantum) spin Hall effect) in novel topological materials, such as monolayer Weyl semimetals WeTe2 and MoTe2. Indeed, the ballistic spin transport results are key for further interpretation of ultraclean spintronic devices, and will enable extracting precise values of spin diffusion lengths in diffusive transport and guide experiments in the (quasi)ballistic regime. Furthermore, the thesis provides an in-depth theoretical interpretation of puzzling huge measured efficiencies of the spin Hall effect in MoTe2, as well as a prediction of a novel canted quantum spin Hall effect in WTe2 with spins pointing in the yz plane.

Edge Magnetization in Chiral Graphene Nanoribbons and Quantum Anomalous Hall Effect Interfaces in Graphene

Edge Magnetization in Chiral Graphene Nanoribbons and Quantum Anomalous Hall Effect Interfaces in Graphene PDF Author: André Ricardo Carvalho
Publisher:
ISBN: 9783668135864
Category :
Languages : en
Pages : 100

Book Description
Doctoral Thesis / Dissertation from the year 2015 in the subject Physics - Other, course: Graphene, language: English, abstract: This thesis is composed of two theoretical studies related to properties of edge states in nanostructures of graphene monolayers. In the first one, we analyze the magnetic properties of chiral graphene nanoribbons. Chiral edges corresponds to a symmetry property whose mirror image cannot be superposed on to the original one, inversely of an achiral. There are only two cases of achiral nanoribbon: armchair or zigzag edges. Chiral graphene nanoribbons, as well as those with zigzag edges, have localized states that favour to edge magnetization. In our analysis we use the tight-binging (TB) model with an electron-electron Hubbard mean-field interaction term. We show that only the standard tight-binding model with nearest-neighbor hopping is not sufficient to describe the low-energy and magnetic properties of graphene nanoribbons, i.e., the inclusion of next-nearest-neighbor hopping terms is necessary for an accurate modeling. We compare the results from our model with recent data from scanning tunneling spectroscopy and propose a new interpretation for the peaks experimentally observed in the local density of states. The second subject of this thesis corresponds to a study in progress of conducting states from the quantum anomalous Hall effect (QAHE) in graphene in the presence of a periodic exchange field and a Rashba spin-orbit interaction. We call interfaces the point where two systems meet, in this case, a system with positive sign in the exchange field interaction (EF) meet the analogous system with negative sign in the EF. The conducting states appear at the point of meet: gapless interfaces states. To this end, we analyze the formation of gapless states in the change of the sign from exchange field parameter in graphene with Rashba spin-orbit interaction. While the system in QAHE with a constant sign in exchange field has ener

Graphene in Spintronics

Graphene in Spintronics PDF Author: Junichiro Inoue
Publisher: CRC Press
ISBN: 9814669571
Category : Science
Languages : en
Pages : 296

Book Description
The discovery and fabrication of new materials have opened the gate for new research fields in science and technology. The novel method of fabricating graphene, a purely 2D carbon lattice, and the discovery of the phenomenon of giant magnetoresistance (GMR) in magnetic multilayers are not exceptions. The latter has brought about the creation of the

Physics of Graphene

Physics of Graphene PDF Author: Hideo Aoki
Publisher: Springer Science & Business Media
ISBN: 331902633X
Category : Science
Languages : en
Pages : 356

Book Description
This book provides a state of the art report of the knowledge accumulated in graphene research. The fascination with graphene has been growing very rapidly in recent years and the physics of graphene is now becoming one of the most interesting as well as the most fast-moving topics in condensed-matter physics. The Nobel prize in physics awarded in 2010 has given a tremendous impetus to this topic. The horizon of the physics of graphene is ever becoming wider, where physical concepts go hand in hand with advances in experimental techniques. Thus this book is expanding the interests to not only transport but optical and other properties for systems that include multilayer as well as monolayer graphene systems. The book comprises experimental and theoretical knowledge. The book is also accessible to graduate students.

Proximity Enhanced Quantum Spin Hall State in Graphene

Proximity Enhanced Quantum Spin Hall State in Graphene PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 6

Book Description
Graphene is the first model system of two-dimensional topological insulator (TI), also known as quantum spin Hall (QSH) insulator. The QSH effect in graphene, however, has eluded direct experimental detection because of its extremely small energy gap due to the weak spin-orbit coupling. Here we predict by ab initio calculations a giant (three orders of magnitude) proximity induced enhancement of the TI energy gap in the graphene layer that is sandwiched between thin slabs of Sb2Te3 (or MoTe2). This gap (1.5 meV) is accessible by existing experimental techniques, and it can be further enhanced by tuning the interlayer distance via compression. We reveal by a tight-binding study that the QSH state in graphene is driven by the Kane-Mele interaction in competition with Kekulé deformation and symmetry breaking. As a result, the present work identifies a new family of graphene-based TIs with an observable and controllable bulk energy gap in the graphene layer, thus opening a new avenue for direct verification and exploration of the long-sought QSH effect in graphene.