Author: Andrew J. Bestwick Publisher: ISBN: Category : Languages : en Pages :
Book Description
In the quantum Hall effect, electrons circulate in one direction around the edge of a 2D sample. The robustness of these states is protected by the topology of the band structure and scattering is only possible if thermally-activated 2D conduction provides a path across the bulk. However, the environmental conditions required for the effect (large magnetic fields and, usually, low temperatures) make it unsuitable for most practical applications. This dissertation discusses the implementation of two similar topological transport phenomena, in the absence of magnetic fields, using the class of materials known as topological insulators. First, it reports on investigations into the quantum spin Hall effect, a time-reversal-symmetric state with counterpropagating, spin-polarized edge channels. Mean free paths in this case are limited to only a few micrometers due to a scattering mechanism under investigation. Second, it reports on recent results on the quantum anomalous Hall effect demonstrating part-per-10,000 conductance quantization, arising from nearly perfect transport through one-way edge channels, in magnetically-doped thin films of 3D topological insulators. It shows that dissipation only occurs due to thermally-activated states that can be nearly eliminated via an unexpected magnetocaloric effect.
Author: Gregory Tkachov Publisher: CRC Press ISBN: 9814613266 Category : Science Languages : en Pages : 180
Book Description
This book is the result of dynamic developments that have occurred in condensed matter physics after the recent discovery of a new class of electronic materials: topological insulators. A topological insulator is a material that behaves as a band insulator in its interior, while acting as a metallic conductor at its surface. The surface current car
Author: C. Brüne Publisher: Elsevier Inc. Chapters ISBN: 0128086866 Category : Science Languages : en Pages : 27
Book Description
This chapter will focus on the experimental properties of the quantum spin Hall effect in HgTe quantum well structures. HgTe quantum wells above a critical thickness are 2-dimensional topological insulators. The most prominent signature of the non-trivial topology in these systems is the occurrence of the quantum spin Hall effect when the Fermi energy is located inside the bulk band gap. We will present the main experimental results we obtained for transport in the quantum spin Hall regime and discuss how they confirm the prediction of the quantum spin Hall effect as a helical edge state system consisting of two counterpropagating oppositely spin polarized edge states.
Author: Kenji Yasuda Publisher: Springer Nature ISBN: 981157183X Category : Computers Languages : en Pages : 109
Book Description
This book reveals unique transport phenomena and functionalities in topological insulators coupled with magnetism and superconductivity. Topological insulators are a recently discovered class of materials that possess a spin-momentum-locked surface state. Their exotic spin texture makes them an exciting platform for investigating emergent phenomena, especially when coupled with magnetism or superconductivity. Focusing on the strong correlation between electricity and magnetism in magnetic topological insulators, the author presents original findings on current-direction-dependent nonreciprocal resistance, current-induced magnetization reversal and chiral edge conduction at the domain wall. In addition, he demonstrates how the coupling between superconductivity and topological surface state leads to substantial nonreciprocal resistance. The author also elucidates the origins of these phenomena and deepens readers’ understanding of the topologically nontrivial electronic state. The book includes several works which are published in top journals and were selected for the President’s Award by the University of Tokyo and for the Ikushi Prize, awarded to distinguished Ph.D. students in Japan.
Author: Di Xiao Publisher: ISBN: Category : Languages : en Pages :
Book Description
Topological insulators are materials that are insulating in the bulk but that conduct via topologically protected states on the boundary. The concept of topology in condensed matter physics was first introduced to explain the integer quantum Hall (IQH) effect. The perfect quantization of these topologically protected edge states, insensitive to sample geometry and disorder, stimulated an extensive search for many exciting new topological materials. One of the milestones along the journey was the theoretical prediction and experimental discovery of Z2 topological insulators.The first class of Z2 topological insulators discovered was the 2-dimensional topological insulator (2D TI), also known as the quantum spin Hall (QSH) insulator. The 2D TI can be viewed as a variation of the IQH system but with time-reversal-symmetry (TRS). The topological invariant for a 2D TI is the Z2 number, defined by its nontrivial band structure instead of the Chern number in the IQH case. Generalizing this idea to 3 dimensions led to the discovery of the 3D TI with four Z2 invariants. Both the 2D and 3D TIs are of interest as model platforms for testing theoretical problems of fundamental interest. For instance, they allow us to realize artificial condensed matter analogs of fundamental particles such as Majorana fermions and axions that have yet to be observed in nature. They are also of interest for potential technological applications, principally spintronics and quantum computing.This dissertation focuses on the synthesis, characterization, and transport properties of both 2D and 3D TIs. We first discuss the 2D TI candidate material system, type II InAs/GaSb quantum wells, which exhibits a rich topological phase diagram that can be tuned by several parameters such as sample geometry or electrostatic gating. By changing the thicknesses of relevant layers, we are able to enter a new insulating regime where unexpected high-density quantum oscillations are observed. We elucidate this phenomenon through theoretical calculation and through control experiments. The seemingly controversial coexistence of high density states and the insulating regime can be explained by the effect of the attractive Coulomb interaction, which was not considered in earlier theories.The second topic we address is quantum transport in 3D TI systems. Breaking the TRS of the 3D TI surface states leads to many exotic phenomena, including the quantum anomalous Hall (QAH) effect and the axion insulator state. By constructing a sandwich heterostructure that has different magnetic coercive fields in the top and bottom magnetic layers, while keeping the center layer free from magnetic impurities, both the QAH and the axion insulator state can be observed in low-temperature transport measurements, when the magnetization alignment of the top and bottom layers is parallel and antiparallel, respectively. We also discuss the scaling behavior of the topological quantum phase transition between these two states.
Author: Frank Ortmann Publisher: John Wiley & Sons ISBN: 3527681604 Category : Technology & Engineering Languages : en Pages : 434
Book Description
There are only few discoveries and new technologies in physical sciences that have the potential to dramatically alter and revolutionize our electronic world. Topological insulators are one of them. The present book for the first time provides a full overview and in-depth knowledge about this hot topic in materials science and condensed matter physics. Techniques such as angle-resolved photoemission spectrometry (ARPES), advanced solid-state Nuclear Magnetic Resonance (NMR) or scanning-tunnel microscopy (STM) together with key principles of topological insulators such as spin-locked electronic states, the Dirac point, quantum Hall effects and Majorana fermions are illuminated in individual chapters and are described in a clear and logical form. Written by an international team of experts, many of them directly involved in the very first discovery of topological insulators, the book provides the readers with the knowledge they need to understand the electronic behavior of these unique materials. Being more than a reference work, this book is essential for newcomers and advanced researchers working in the field of topological insulators.
Author: Joseph Maciejko Publisher: Stanford University ISBN: Category : Languages : en Pages : 242
Book Description
This dissertation brings together a number of topics in the theory of time-reversal invariant topological insulators. The first four chapters are devoted to the transport properties of the two-dimensional (2D) quantum spin Hall state. We explain nonlocal transport measurements in mercury telluride (HgTe) quantum wells in terms of a Landauer-Büttiker theory of helical edge transport and confirm the discovery of the quantum spin Hall state in this material. We find that decoherence can lead to backscattering without breaking microscopic time-reversal symmetry. As an example of incoherent scattering, we study a Kondo impurity in an interacting helical edge liquid. A renormalization group analysis shows the existence of an impurity quantum phase transition governed by the Luttinger parameter of the edge liquid between a local helical Fermi liquid with T^6 scaling of the low-temperature conductance, and an insulating strongly correlated phase with fractionally charged emergent excitations. In the presence of a time-reversal symmetry breaking magnetic field, it is known that even coherent scattering can lead to backscattering. Through exact numerical diagonalization we find that nonmagnetic quenched disorder has a strong localizing effect on the edge transport if the disorder strength is comparable to the bulk gap. The predicted magnetoconductance agrees qualitatively with experiment. The last two chapters are devoted to 3D topological insulators. We propose a combined magnetooptical Kerr and Faraday rotation experiment as a universal measure of the Z_2 invariant. Finally, we propose a fractional generalization of 3D topological insulators in strongly correlated systems, characterized by ground state degeneracy on topologically nontrivial spatial 3-manifolds, a quantized fractional bulk magnetoelectric polarizability without time-reversal symmetry breaking, and a halved fractional quantum Hall effect on the surface.
Author: B. Andrei Bernevig Publisher: Princeton University Press ISBN: 1400846730 Category : Science Languages : en Pages : 264
Book Description
This graduate-level textbook is the first pedagogical synthesis of the field of topological insulators and superconductors, one of the most exciting areas of research in condensed matter physics. Presenting the latest developments, while providing all the calculations necessary for a self-contained and complete description of the discipline, it is ideal for graduate students and researchers preparing to work in this area, and it will be an essential reference both within and outside the classroom. The book begins with simple concepts such as Berry phases, Dirac fermions, Hall conductance and its link to topology, and the Hofstadter problem of lattice electrons in a magnetic field. It moves on to explain topological phases of matter such as Chern insulators, two- and three-dimensional topological insulators, and Majorana p-wave wires. Additionally, the book covers zero modes on vortices in topological superconductors, time-reversal topological superconductors, and topological responses/field theory and topological indices. The book also analyzes recent topics in condensed matter theory and concludes by surveying active subfields of research such as insulators with point-group symmetries and the stability of topological semimetals. Problems at the end of each chapter offer opportunities to test knowledge and engage with frontier research issues. Topological Insulators and Topological Superconductors will provide graduate students and researchers with the physical understanding and mathematical tools needed to embark on research in this rapidly evolving field.
Author: Run Xiao Publisher: ISBN: Category : Languages : en Pages : 0
Book Description
This dissertation focuses on the synthesis, characterization, fabrication, and electrical transport measurements of topological materials, including magnetically doped topological insulators and Dirac semimetal Cd3As2. Bismuth-chalcogenide topological insulators have time-reversal-symmetry-protected surface states due to the strong spin-orbit coupling. Breaking the time-reversal symmetry by magnetic dopants can lead to fascinating exotic phenomena, such as the quantum anomalous Hall effect. On the other hand, Dirac semimetals host three-dimensional Dirac fermions and can be identified as a parent phase of other topological phases, such as Weyl semimetals. In this dissertation, quantum transport measurements are performed on thin films of topological materials to investigate and understand the unusual electronic states that host these topological phases. These studies can motivate and facilitate the development of potential applications of topological materials, especially in spintronics and quantum computing. The first topological material studied in this dissertation is a magnetically doped topological insulator system: Cr doped (Bi,Sb)2Te3 - (Bi,Sb)2Te3 - Cr doped (Bi,Sb)2Te3 sandwich heterostructure. By tuning the chemical and asymmetric potentials using dual gates, both the quantum anomalous hall effect, due to the topology in the momentum space, and the topological Hall effect, due to the topology in real space, can be observed in this heterostructure system. We also mapped out a phase diagram of the topological Hall and quantum anomalous Hall effects as a function of the chemical and asymmetry potentials, paving a way to understand and manipulate the chiral magnetic spin textures in real space. The second topological material is Dirac semimetal Cd3As2. We investigated the integer quantum Hall effect in Cd3As2 thin films under strong to moderate quantum confinement (thicknesses of 10 nm, 12 nm, and 15 nm). In all the films, we observed the integer quantum Hall effect in the spin-polarized lowest Landau level (filling factor [nu]=1) and at spin-degenerate higher index Landau levels with even filling factors ([nu]=2,4,6). We also observed the lifting of the Landau level spin degeneracy at v=3 with strong quantum confinement. A tight-binding calculation suggests that the enhanced g-factor due to the quantum confinement and corrections from nearby subbands can be the reason for the emergence of v=3 quantum Hall plateau. Last, we explored the introduction of the transition metal Mn into Cd3As2 thin films to break the time-reversal symmetry. Scanning transmission electron microscopy of these films shows a formation of an Mn-rich layer on top of a pure Cd3As2 layer using both uniform and delta doping methods. The low solubility of Mn in Cd3As2 can be the reason for the phase separation. The Mn-rich region shows out-of-plane magnetic anisotropy in superconducting quantum interference device magnetometry measurements. Moreover, the presence of the Mn surfactant lowers the carrier density in the Cd3As2 layer, and an incipient quantum Hall effect can be observed in low-temperature transport measurements.
Author: Andrew J. Bestwick
Author: Gregory Tkachov
Author: C. Brüne
Author: Kenji Yasuda
Author: Di Xiao
Author: Frank Ortmann
Author: Joseph Maciejko
Author: B. Andrei Bernevig
Author: Johannes Krotz
Author: Run Xiao