Quantitative Defect Spectroscopy on Operating AlGaN/GaN High Electron Mobility Transistors PDF Download

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Quantitative Defect Spectroscopy on Operating AlGaN/GaN High Electron Mobility Transistors

Quantitative Defect Spectroscopy on Operating AlGaN/GaN High Electron Mobility Transistors PDF Author: Andrew C Malonis
Publisher:
ISBN:
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Languages : en
Pages : 127

Book Description
Abstract: Despite numerous advances in the growth, fabrication, and characterization of AlGaN/GaN HEMT devices, there remain a number of unknowns related to the impact of deep levels on HEMT performance. Of specific interest to ongoing development of HEMT technology is the development of techniques which can not only detect the specific energy levels of deep levels in operating devices, but can also relate the presence of these defects to changes in specific device parameters. By examining more established techniques and developing new on-device characterization methods, the impact of defects on AlGaN/GaN HEMTs was quantitatively studied.
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