Author: Daniel D. Burkey
Publisher:
ISBN:
Category :
Languages : en
Pages : 284
Book Description
Organosilicon matrix material resulted in film collapse rather than the formation of voids. In order to prevent this, an extensive study of the mechanical properties of the matrix material was performed, with identification of key structure-property-processing relationships that allowed for the enhancement of mechanical properties while maintaining favorable conditions for the deposition of the porogen species. Integration of the optimized system and subsequent removal of the porogen sacrificial material resulted in thin films with properties suggesting porosity and dielectric constants as low as 2.3.
Pulsed-plasma Chemical Vapor Deposition of Organosilicon Thin Films for Dielectric Applications
Author: Daniel D. Burkey
Publisher:
ISBN:
Category :
Languages : en
Pages : 284
Book Description
Organosilicon matrix material resulted in film collapse rather than the formation of voids. In order to prevent this, an extensive study of the mechanical properties of the matrix material was performed, with identification of key structure-property-processing relationships that allowed for the enhancement of mechanical properties while maintaining favorable conditions for the deposition of the porogen species. Integration of the optimized system and subsequent removal of the porogen sacrificial material resulted in thin films with properties suggesting porosity and dielectric constants as low as 2.3.
Publisher:
ISBN:
Category :
Languages : en
Pages : 284
Book Description
Organosilicon matrix material resulted in film collapse rather than the formation of voids. In order to prevent this, an extensive study of the mechanical properties of the matrix material was performed, with identification of key structure-property-processing relationships that allowed for the enhancement of mechanical properties while maintaining favorable conditions for the deposition of the porogen species. Integration of the optimized system and subsequent removal of the porogen sacrificial material resulted in thin films with properties suggesting porosity and dielectric constants as low as 2.3.
Chemical Vapor Deposition of Organosilicon Composite Thin Films for Porous Low-k Dielectrics
Author: April Denise Ross
Publisher:
ISBN:
Category :
Languages : en
Pages : 238
Book Description
Pulsed plasma enhanced chemical vapor deposition has produced organosilicon thin films with the potential use as low dielectric constant interconnect materials in microelectronic circuits. Both diethylsilane and octamethylcyclotetrasiloxane precursors were used, with oxygen and hydrogen peroxides oxidants respectively, to deposit low-k organosilicon films. FTIR, nanoindentation, ellipsometry, and dielectric constant measurements were demonstrated as a valuable film characterization tools to understand structure-property-processing fundamentals by quantifying structural bonding environments and relating those to the film properties. Nanocomposites were also produced using two novel techniques. First, crystal colloidal templates of polystyrene nanospheres were fabricated using evaporation-induced self-assembly. OSG was then deposited throughout the templates to create composite materials. Subsequently the polystyrene was removed upon thermal annealing to create highly porous OSG thin films. Second, ultrasonic atomization was used to deliver particles into a vacuum chamber during plasma-enhanced CVD of the organosilicon matrix to create composite thin films using an all-CVD technique. This process could extend CVD to applications currently only possible using wet processing techniques or multi-step processing.
Publisher:
ISBN:
Category :
Languages : en
Pages : 238
Book Description
Pulsed plasma enhanced chemical vapor deposition has produced organosilicon thin films with the potential use as low dielectric constant interconnect materials in microelectronic circuits. Both diethylsilane and octamethylcyclotetrasiloxane precursors were used, with oxygen and hydrogen peroxides oxidants respectively, to deposit low-k organosilicon films. FTIR, nanoindentation, ellipsometry, and dielectric constant measurements were demonstrated as a valuable film characterization tools to understand structure-property-processing fundamentals by quantifying structural bonding environments and relating those to the film properties. Nanocomposites were also produced using two novel techniques. First, crystal colloidal templates of polystyrene nanospheres were fabricated using evaporation-induced self-assembly. OSG was then deposited throughout the templates to create composite materials. Subsequently the polystyrene was removed upon thermal annealing to create highly porous OSG thin films. Second, ultrasonic atomization was used to deliver particles into a vacuum chamber during plasma-enhanced CVD of the organosilicon matrix to create composite thin films using an all-CVD technique. This process could extend CVD to applications currently only possible using wet processing techniques or multi-step processing.
Handbook of Thin Film Deposition
Author: Krishna Seshan
Publisher: William Andrew
ISBN: 0128123125
Category : Technology & Engineering
Languages : en
Pages : 472
Book Description
Handbook of Thin Film Deposition, Fourth Edition, is a comprehensive reference focusing on thin film technologies and applications used in the semiconductor industry and the closely related areas of thin film deposition, thin film micro properties, photovoltaic solar energy applications, materials for memory applications and methods for thin film optical processes. The book is broken up into three sections: scaling, equipment and processing, and applications. In this newly revised edition, the handbook will also explore the limits of thin film applications, most notably as they relate to applications in manufacturing, materials, design and reliability. - Offers a practical survey of thin film technologies aimed at engineers and managers involved in all stages of the process: design, fabrication, quality assurance, applications and the limitations faced by those processes - Covers core processes and applications in the semiconductor industry and new developments within the photovoltaic and optical thin film industries - Features a new chapter discussing Gates Dielectrics
Publisher: William Andrew
ISBN: 0128123125
Category : Technology & Engineering
Languages : en
Pages : 472
Book Description
Handbook of Thin Film Deposition, Fourth Edition, is a comprehensive reference focusing on thin film technologies and applications used in the semiconductor industry and the closely related areas of thin film deposition, thin film micro properties, photovoltaic solar energy applications, materials for memory applications and methods for thin film optical processes. The book is broken up into three sections: scaling, equipment and processing, and applications. In this newly revised edition, the handbook will also explore the limits of thin film applications, most notably as they relate to applications in manufacturing, materials, design and reliability. - Offers a practical survey of thin film technologies aimed at engineers and managers involved in all stages of the process: design, fabrication, quality assurance, applications and the limitations faced by those processes - Covers core processes and applications in the semiconductor industry and new developments within the photovoltaic and optical thin film industries - Features a new chapter discussing Gates Dielectrics
Chemical Vapor Deposition
Author: Srinivasan Sivaram
Publisher: Springer Science & Business Media
ISBN: 1475747519
Category : Technology & Engineering
Languages : en
Pages : 302
Book Description
In early 1987 I was attempting to develop a CVD-based tungsten process for Intel. At every step ofthe development, information that we were collecting had to be analyzed in light of theories and hypotheses from books and papers in many unrelated subjects. Thesesources were so widely different that I came to realize there was no unifying treatment of CVD and its subprocesses. More interestingly, my colleagues in the industry were from many disciplines (a surface chemist, a mechanical engineer, a geologist, and an electrical engineer werein my group). To help us understand the field of CVD and its players, some of us organized the CVD user's group of Northern California in 1988. The idea for writing a book on the subject occurred to me during that time. I had already organized my thoughts for a course I taught at San Jose State University. Later Van Nostrand agreed to publish my book as a text intended for students at the senior/first year graduate level and for process engineers in the microelectronics industry, This book is not intended to be bibliographical, and it does not cover every new material being studied for chemical vapor deposition. On the other hand, it does present the principles of CVD at a fundamental level while uniting them with the needs of the microelectronics industry.
Publisher: Springer Science & Business Media
ISBN: 1475747519
Category : Technology & Engineering
Languages : en
Pages : 302
Book Description
In early 1987 I was attempting to develop a CVD-based tungsten process for Intel. At every step ofthe development, information that we were collecting had to be analyzed in light of theories and hypotheses from books and papers in many unrelated subjects. Thesesources were so widely different that I came to realize there was no unifying treatment of CVD and its subprocesses. More interestingly, my colleagues in the industry were from many disciplines (a surface chemist, a mechanical engineer, a geologist, and an electrical engineer werein my group). To help us understand the field of CVD and its players, some of us organized the CVD user's group of Northern California in 1988. The idea for writing a book on the subject occurred to me during that time. I had already organized my thoughts for a course I taught at San Jose State University. Later Van Nostrand agreed to publish my book as a text intended for students at the senior/first year graduate level and for process engineers in the microelectronics industry, This book is not intended to be bibliographical, and it does not cover every new material being studied for chemical vapor deposition. On the other hand, it does present the principles of CVD at a fundamental level while uniting them with the needs of the microelectronics industry.
Chemical Vapor Deposition for Microelectronics
Author: Arthur Sherman
Publisher: William Andrew
ISBN:
Category : Computers
Languages : en
Pages : 240
Book Description
Presents an extensive, comprehensive study of chemical vapor deposition (CVD). Understanding CVD requires knowledge of fluid mechanics, plasma physics, chemical thermodynamics, and kinetics as well as homogenous and heterogeneous chemical reactions. This text presents these aspects of CVD in an integrated fashion, and also reviews films for use in integrated circuit technology.
Publisher: William Andrew
ISBN:
Category : Computers
Languages : en
Pages : 240
Book Description
Presents an extensive, comprehensive study of chemical vapor deposition (CVD). Understanding CVD requires knowledge of fluid mechanics, plasma physics, chemical thermodynamics, and kinetics as well as homogenous and heterogeneous chemical reactions. This text presents these aspects of CVD in an integrated fashion, and also reviews films for use in integrated circuit technology.
Chemical Vapor Deposition of Organosilicon and Sacrificial Polymer Thin Films
Author: Thomas Bryan Casserly
Publisher:
ISBN:
Category :
Languages : en
Pages : 326
Book Description
Chemical vapor deposition (CVD) produced films for a wide array of applications from a variety of organosilicon and organic precursors. The structure and properties of thin films were controlled by varying processing conditions such as the method and power of precursor activation, pressure, flow rates, and substrate temperature. Systematic variance of deposition conditions allows for the design of materials for a specific application, highlighting the versatility of CVD processes. Spectroscopic tools including Fourier transform infrared spectroscopy, variable angle spectroscopic ellipsometry, X-ray photoelectron spectroscopy, Raman spectroscopy, and nuclear magnetic resonance (NMR) spectroscopy were utilized to characterize film structure and understand the relationship between the structure and properties of materials. Computational quantum mechanics is a power tool applied to explain observed phenomena such as unreferenced chemical shifts in the 29Si NMR of organosilicon thin films, and to examine the thermochemistry of a family of methyl- and methoxymethylsilanes enabling the prediction of initial reactions occurring in the CVD process.
Publisher:
ISBN:
Category :
Languages : en
Pages : 326
Book Description
Chemical vapor deposition (CVD) produced films for a wide array of applications from a variety of organosilicon and organic precursors. The structure and properties of thin films were controlled by varying processing conditions such as the method and power of precursor activation, pressure, flow rates, and substrate temperature. Systematic variance of deposition conditions allows for the design of materials for a specific application, highlighting the versatility of CVD processes. Spectroscopic tools including Fourier transform infrared spectroscopy, variable angle spectroscopic ellipsometry, X-ray photoelectron spectroscopy, Raman spectroscopy, and nuclear magnetic resonance (NMR) spectroscopy were utilized to characterize film structure and understand the relationship between the structure and properties of materials. Computational quantum mechanics is a power tool applied to explain observed phenomena such as unreferenced chemical shifts in the 29Si NMR of organosilicon thin films, and to examine the thermochemistry of a family of methyl- and methoxymethylsilanes enabling the prediction of initial reactions occurring in the CVD process.
Pulsed Plasma-enhanced Chemical Vapor Deposition of Metal Oxide Thin Films
Author: Michael T. Seman
Publisher:
ISBN:
Category : Electrochromic devices
Languages : en
Pages : 348
Book Description
Publisher:
ISBN:
Category : Electrochromic devices
Languages : en
Pages : 348
Book Description
Chemical Vapor Deposition
Author: Electrochemical Society. High Temperature Materials Division
Publisher: The Electrochemical Society
ISBN: 9781566771788
Category : Science
Languages : en
Pages : 1686
Book Description
Publisher: The Electrochemical Society
ISBN: 9781566771788
Category : Science
Languages : en
Pages : 1686
Book Description
Thin Films by Chemical Vapour Deposition
Author: C. E. Moroșanu
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 724
Book Description
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 724
Book Description
Plasma Enhanced Chemical Vapor Deposition of Titanium Oxide Thin Films for Dielectric Applicaitons
Author: Wenli Yang
Publisher:
ISBN:
Category : Dielectrics
Languages : en
Pages : 298
Book Description
Publisher:
ISBN:
Category : Dielectrics
Languages : en
Pages : 298
Book Description