Author: Fan QianPublisher:
ISBN:
Category :
Languages : en
Pages : 194
Book Description
Pulsed Laser Deposition of Diamond-like-carbon and Boron Nitride Thin Films
Author: Fan QianLaser-assisted Deposition of Boron Nitride Thin Films and Nanotubes
Author: Armando LuchesPublisher: Nova Science Publishers
ISBN: 9781611224207
Category : Boron nitride
Languages : en
Pages : 0
Book Description
Pulsed laser deposition (PLD) is at present one of the most interesting technique for thin film deposition. In the PLD process a film is formed by ablating a solid target with energetic laser pulses and collecting the material of interest on a substrate placed a few cm from the target. According to its ability to carry the stoichiometry from the target to the substrate and to its relatively high growth rate (~0.1 nm/pulse), PLD is an attractive technique for compound thin film deposition. This technique offers the possibility of depositing thin films on room-temperature or low-temperature substrates, due to the high energy of the species forming the laser plasma plume expanding from the target to the substrate. This book reviews research on the depositon of c-BN films by using PLD, ion-assisted PLD and other laser-assisted procedures.
Plasma Enhanced Pulsed Laser Deposition of Boron Nitride Thin Films
Author: Gregory Edward TriplettPublisher:
ISBN:
Category : Boron nitride
Languages : en
Pages : 112
Book Description
Covalently Bonded Disordered Thin-Film Materials: Volume 498
Author: M. P. SiegelPublisher: Mrs Proceedings
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 336
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Synthesis and characterization of diamond-like carbon thin films prepared by pulsed laser deposition method
Author: Jaanus EskussonPublisher:
ISBN: 9789949191291
Category :
Languages : en
Pages : 116
Book Description
Pulsed Laser Deposition of Thin Films
Author: Robert EasonPublisher: John Wiley & Sons
ISBN: 0470052112
Category : Science
Languages : en
Pages : 754
Book Description
Edited by major contributors to the field, this text summarizes current or newly emerging pulsed laser deposition application areas. It spans the field of optical devices, electronic materials, sensors and actuators, biomaterials, and organic polymers. Every scientist, technologist and development engineer who has a need to grow and pattern, to apply and use thin film materials will regard this book as a must-have resource.
Current Research in Pulsed Laser Deposition
Author: Liviu DutaPublisher: MDPI
ISBN: 3036510443
Category : Medical
Languages : en
Pages : 224
Book Description
Despite its limitation in terms of surface covered area, the PLD technique still gathers interest among researchers by offering endless possibilities for tuning thin film composition and enhancing their properties of interest due to: (i) the easiness of a stoichiometric transfer even for very complex target materials, (ii) high adherence of the deposited structures to the substrate, (iii) controlled degree of phase, crystallinity, and thickness of deposited coatings, (iv) versatility of the experimental set-up which allows for simultaneous ablation of multiple targets resulting in combinatorial maps or consecutive ablation of multiple targets producing multi-layered structures, and (v) adjustment of the number of laser pulses, resulting in either a spread of nanoparticles, islands of materials or a complete covering of a surface. Moreover, a variation of PLD, known as Matrix Assisted Pulsed Laser Evaporation, allows for deposition of organic materials, ranging from polymers to proteins and even living cells, otherwise difficult to transfer unaltered in the form of thin films by other techniques. Furthermore, the use of laser light as transfer agent ensures purity of films and pulse-to-pulse deposition allows for an unprecedented control of film thickness at the nm level. This Special Issue is a collection of state-of-the art research papers and reviews in which the topics of interest are devoted to thin film synthesis by PLD and MAPLE, for numerous research and industry field applications, such as bio-active coatings for medical implants and hard, protective coatings for cutting and drilling tools withstanding high friction and elevated temperatures, sensors, solar cells, lithography, magnetic devices, energy-storage and conversion devices, controlled drug delivery and in situ microstructuring for boosting of surface properties.
The Pulsed Laser Deposition of CuO, CoO, Co3O4, Diamond-like Carbon, GaN, AlN, and InN Thin Films
Author: David FeilerInvestigation of Reactively Sputtered Boron Carbon Nitride Thin Films
Author: Vinit O. TodiPublisher:
ISBN:
Category : Boron nitride
Languages : en
Pages : 130
Book Description
Research efforts have been focused in the development of hard and wear resistant coatings over the last few decades. These protective coatings find applications in the industry such as cutting tools, automobile and machine part etc. Various ceramic thin films like TiN, TiAlN, TiC, SiC and diamond-like carbon (DLC) are examples of the films used in above applications. However, increasing technological and industrial demands request thin films with more complicated and advanced properties. For this purpose, B-C-N ternary system which is based on carbon, boron and nitrogen which exhibit exceptional properties and attract much attention from mechanical, optical and electronic perspectives. Also, boron carbonitride (BCN) thin films contains interesting phases such as diamond, cubic BN (c-BN), hexagonal boron nitride (h-BN), B4C, [greek lower case letter beta]-C3N4. Attempts have been made to form a material with semiconducting properties between the semi metallic graphite and the insulating h-BN, or to combine the cubic phases of diamond and c-BN (BC2N heterodiamond) in order to merge the higher hardness of the diamond with the advantages of c-BN, in particular with its better chemical resistance to iron and oxygen at elevated temperatures. New microprocessor CMOS technologies require interlayer dielectric materials with lower dielectric constant than those used in current technologies to meet RC delay goals and to minimize cross-talk. Silicon oxide or fluorinated silicon oxide (SiOF) materials having dielectric constant in the range of 3.6 to 4 have been used for many technology nodes. In order to meet the aggressive RC delay goals, new technologies require dielectric materials with K[less than]3. BCN shows promise as a low dielectric constant material with good mechanical strength suitable to be used in newer CMOS technologies. For optical applications, the deposition of BCN coatings on polymers is a promising method for protecting the polymer surface against wear and scratching. BCN films have high optical transparency and thus can be used as mask substrates for X-ray lithography. Most of the efforts from different researchers were focused to deposit cubic boron nitride and boron carbide films. Several methods of preparing boron carbon nitride films have been reported, such as chemical vapor deposition (CVD), plasma assisted CVD, pulsed laser ablation and ion beam deposition. Very limited studies could be found focusing on the effect of nitrogen incorporation into boron carbide structure by sputtering. In this work, the deposition and characterization of amorphous thin films of boron carbon nitride (BCN) is reported. The BCN thin films were deposited by radio frequency (rf) magnetron sputtering system. The BCN films were deposited by sputtering from a high purity B4C target with the incorporation of nitrogen gas in the sputtering ambient. Films of different compositions were deposited by varying the ratios of argon and nitrogen gas in the sputtering ambient. Investigation of the oxidation kinetics of these materials was performed to study high temperature compatibility of the material. Surface characterization of the deposited films was performed using X-ray photoelectron spectroscopy and optical profilometry. Studies reveal that the chemical state of the films is highly sensitive to nitrogen flow ratios during sputtering. Surface analysis shows that smooth and uniform BCN films can be produced using this technique. Carbon and nitrogen content in the films seem to be sensitive to annealing temperatures. However depth profile studies reveal certain stoichiometric compositions to be stable after high temperature anneal up to 700°C. Electrical and optical characteristics are also investigated with interesting results. The optical band gap of the films ranged from 2.0 eV - 3.1 eV and increased with N2/Ar gas flow ratio except at the highest ratio. The optical band gap showed an increasing trend when annealed at higher temperatures. The effect of deposition temperature on the optical and chemical compositions of the BCN films was also studied. The band gap increased with the deposition temperature and the films deposited at 500°C had the highest band gap. Dielectric constant was calculated from the Capacitance-Voltage curves obtained for the MOS structures with BCN as the insulating material. Aluminum was used as the top electrode and the substrate was p-type Si. Effect of N2/Ar gas flow ratio and annealing on the values of dielectric constant was studied and the dielectric constant of 2.5 was obtained for the annealed BCN films. This by far is the lowest value of dielectric constant reported for BCN film deposited by sputtering. Lastly, the future research work on the BCN films that will be carried out as a part of the dissertation is proposed.
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