Author: Arkady Michael HorakPublisher:
ISBN:
Category :
Languages : en
Pages : 78
Book Description
Pulsed Laser Annealing of Ion Implanted Gallium Arsenide
Author: Arkady Michael HorakPulsed-laser Annealing of Ion-implanted GaAs
Author: Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
It is shown that, in the pulsed-laser irradiation of crystalline or lightly damaged GaAs, good agreement is obtained between measured and calculated thresholds for melting, for catastrophic damage due to vaporization, and for the duration of surface melting at various energy densities. Good agreement between theory and experiment is also obtained for dopant profile spreading during pulsed-laser annealing.
Laser Annealing of Ion Implanted Gallium Arsenide
Author: Robert S. Mason (2LT, USAF.)Publisher:
ISBN:
Category : Annealing of crystals
Languages : en
Pages : 120
Book Description
Laser Annealing of Ion Implanted Gallium Arsenide
Author: Robert S. MasonPublisher:
ISBN:
Category :
Languages : en
Pages : 68
Book Description
Ion implanted GaAs, irradiated by a Q-switched ruby laser, is examined primarily by cathodoluminescence, as well as ellipsometry and electrical measurements, to evaluate the quality of laser anneal. Weak cathodoluminescence spectra from laser irradiated samples indicate far less radiative centers than in thermally annealed samples. Emitted radiation from existing centers is attenuated by the formation of a surface layer on GaAs during exposure to the ruby laser, resulting in spectra which is slightly weaker than spectra representative of the material's condition. This attenuating layer occurs in both virgin and implanted GaAs exposed to ruby laser radiation. Ion implanted Si, exposed to the same Q-switched ruby laser, is examined by Rutherford backscattering and indicates a return to crystallinity of the implant layer. (Author).
Laser Annealing of Semiconductors
Author: J PoatePublisher: Elsevier
ISBN: 0323145426
Category : Technology & Engineering
Languages : en
Pages : 577
Book Description
Laser Annealing of Semiconductors deals with the materials science of surfaces that have been subjected to ultrafast heating by intense laser or electron beams. This book is organized into 13 chapters that specifically tackle transient annealing of compound semiconductors. After briefly dealing with an overview of laser annealing, this book goes on discussing the concepts of solidification and crystallization pertinent to the field. These topics are followed by discussions on the main mechanisms of interaction of photon and electron beams with condensed matter; the calculation of thermophysical properties of crystalline materials; and high-speed crystal growth by laser annealing of ion-implanted silicon. The subsequent chapters describe the microstructural and topographical properties of annealed semiconductor layers and the epitaxy of ion-implanted silicon irradiated with a laser or electron beam single pulse. This text also explores the electronic and surface properties and the continuous-wave beam processing of semiconductors. The concluding chapters cover various reactions in metal-semiconductor systems, such as fast and laser-induced melting, solidification, mixing, and quenching. Laser-induced interactions in metal-semiconductor systems and the factors involved in control of the heat treatment process are also discussed in these chapters. Materials scientists and researchers and device engineers will find this book invaluable.
Laser Annealing of Ion Implanted Semiconductors
Author: J. F. MorhangePublisher:
ISBN:
Category :
Languages : en
Pages : 80
Book Description
Contents: Raman Spectroscopy of Amorphous GaAs of Crystalline Transition Induced by Laser Annealing; The Vibration of a Gallium Arsenide Microcristallite; Experimental Determination of the Temperature of Silicon at the Spot of a Continuous Laser; Raman Spectroscopy of Very Heavily Doped Silicon; Sub-Picosecond Spectroscopy. Annexes: Lattice Dynamics of Thin Ionic Slabs; Anharmonic Effects in Light Scattering Due to Optical Phonons in Silicon; Fundamental of Laser Annealing.
Impact of Ion Implantation on Quantum Dot Heterostructures and Devices
Author: Arjun MandalPublisher: Springer
ISBN: 9811043345
Category : Technology & Engineering
Languages : en
Pages : 84
Book Description
This book looks at the effects of ion implantation as an effective post-growth technique to improve the material properties, and ultimately, the device performance of In(Ga)As/GaAs quantum dot (QD) heterostructures. Over the past two decades, In(Ga)As/GaAs-based QD heterostructures have marked their superiority, particularly for application in lasers and photodetectors. Several in-situ and ex-situ techniques that improve material quality and device performance have already been reported. These techniques are necessary to maintain dot density and dot size uniformity in QD heterostructures and also to improve the material quality of heterostructures by removing defects from the system. While rapid thermal annealing, pulsed laser annealing and the hydrogen passivation technique have been popular as post-growth methods, ion implantation had not been explored largely as a post-growth method for improving the material properties of In(Ga)As/GaAs QD heterostructures. This work attempts to remedy this gap in the literature. The work also looks at introduction of a capping layer of quaternary alloy InAlGaAs over these In(Ga)As/GaAs QDs to achieve better QD characteristics. The contents of this volume will prove useful to researchers and professionals involved in the study of QDs and QD-based devices.
GaAs Devices and Circuits
Author: Michael S. ShurPublisher: Springer Science & Business Media
ISBN: 1489919899
Category : Technology & Engineering
Languages : en
Pages : 677
Book Description
GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.
Characterization of Laser Annealing of Ion Implanted GaAs and Si Using Optical Reflectivity
Author: Bill W. MullinsPublisher:
ISBN:
Category :
Languages : en
Pages : 66
Book Description
The effect of laser annealing on ion implanted GaAs and Si has been assessed using optical reflectivity spectra. The spectra were recorded over the range of 2100A to 4500A and reflectivity peaks were obtained near 2400A and 4100A for GaAs and 2700A and 3700A for Si. The magnitude of these peaks was then observed as a function of annealing parameters. Laser annealing was carried out using a 30 nsec ruby laser pulse. The GaAs samples were implanted 120 KeV Te at a fluence of 10 to the 14th power ions/sq. cm; Si samples were implanted with 30 KeV In at a fluence of 10 to the 15th power ions/sq cm. The reflectivity spectrum of implanted GaAs was found to return to that of unimplanted materials at an annealing energy density of approximately 0.35 J sq. cm. whereas the spectrum of Si was found to approach that of the unimplanted samples at energy densities of 1.34 J/sq. cm. The values obtained compare well with those obtained from other diagnostic techniques. (Author).
Ion Implantation: Equipment and Techniques
Author: H. RysselPublisher: Springer Science & Business Media
ISBN: 3642691560
Category : Science
Languages : en
Pages : 564
Book Description
The Fourth International Conference on Ion Implantation: Equipment and Tech niques was held at the Convention Center in Berchtesgaden, Bavaria, Germany, from September 13 to 17, 1982. It was attended by more than 200 participants from over 20 different countries. Severa1 series of conferences have dealt with the app1ication of ion implantation to semiconductors and other materials (Thousand Oaks, 1970; Garmisch-Partenkirchen, 1971; Osaka, 1974; Warwick, 1975; Bou1der, 1975; Budapest, 1978; and Albany, 1980). Another series of conferences has been devoted to implantation equipment and techniques (S- ford, 1977; Trento, 1978; and Kingston, 1980). This conference was the fourth in the 1atter series. Twe1ve invited papers and 55 contributed papers covered the areas of ion implantation equipment, measuring techniques, and app1ica tions of implantation to metals and semiconductors. A schoo1 on ion implantation was held in connection with the conference, and the 1ectures presented at this schoo1 were pub1ished as Vo1. 10 of the Springer Series in E1ectrophysics under the tit1e Ion Implantation Techniques (edited by H. Rysse1 and H. G1awischnig). During the conference, space was also provided for presentations and demonstrations by manufacturers of ion implantation equipment. Once again, this conference provided a forum for free discussion among implantation specia1ists in industry as we11 as research institutions. Espe cially effective in stimulating a free exchange of information was the daily get-together over free beer at the "Bier Adam". Many people contributed to the success of this conference.