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Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
It is shown that, in the pulsed-laser irradiation of crystalline or lightly damaged GaAs, good agreement is obtained between measured and calculated thresholds for melting, for catastrophic damage due to vaporization, and for the duration of surface melting at various energy densities. Good agreement between theory and experiment is also obtained for dopant profile spreading during pulsed-laser annealing.
Author: Michael S. Shur Publisher: Springer Science & Business Media ISBN: 1489919899 Category : Technology & Engineering Languages : en Pages : 677
Book Description
GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.
Author: J. S. Williams Publisher: Academic Press ISBN: 1483220648 Category : Technology & Engineering Languages : en Pages : 432
Book Description
Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable.
Author: H. Ryssel Publisher: Springer Science & Business Media ISBN: 3642691560 Category : Science Languages : en Pages : 564
Book Description
The Fourth International Conference on Ion Implantation: Equipment and Tech niques was held at the Convention Center in Berchtesgaden, Bavaria, Germany, from September 13 to 17, 1982. It was attended by more than 200 participants from over 20 different countries. Severa1 series of conferences have dealt with the app1ication of ion implantation to semiconductors and other materials (Thousand Oaks, 1970; Garmisch-Partenkirchen, 1971; Osaka, 1974; Warwick, 1975; Bou1der, 1975; Budapest, 1978; and Albany, 1980). Another series of conferences has been devoted to implantation equipment and techniques (S- ford, 1977; Trento, 1978; and Kingston, 1980). This conference was the fourth in the 1atter series. Twe1ve invited papers and 55 contributed papers covered the areas of ion implantation equipment, measuring techniques, and app1ica tions of implantation to metals and semiconductors. A schoo1 on ion implantation was held in connection with the conference, and the 1ectures presented at this schoo1 were pub1ished as Vo1. 10 of the Springer Series in E1ectrophysics under the tit1e Ion Implantation Techniques (edited by H. Rysse1 and H. G1awischnig). During the conference, space was also provided for presentations and demonstrations by manufacturers of ion implantation equipment. Once again, this conference provided a forum for free discussion among implantation specia1ists in industry as we11 as research institutions. Espe cially effective in stimulating a free exchange of information was the daily get-together over free beer at the "Bier Adam". Many people contributed to the success of this conference.
Author: S. Coffa Publisher: Newnes ISBN: 044459972X Category : Science Languages : en Pages : 1031
Book Description
The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters.The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.
Author: Leonard C. Feldman Publisher: Academic Press ISBN: 0323139817 Category : Technology & Engineering Languages : en Pages : 321
Book Description
Our intention has been to write a book that would be useful to people with a variety of levels of interest in this subject. Clearly it should be useful to both graduate students and workers in the field. We have attempted to bring together many of the concepts used in channeling beam analysis with an indication of the origin of the ideas within fundamental channeling theory. The level of the book is appropriate to senior under-graduates and graduate students who have had a modern physics course work in related areas of materials science and wish to learn more about the "channeling" probe, its strengths, weaknesses, and areas of further potential application. To them we hope we have explained this apparent paradox of using mega-electron volt ions to probe solid state phenomena that have characteristic energies of electron volts.
Author: C.W. White Publisher: Elsevier ISBN: 0323142532 Category : Technology & Engineering Languages : en Pages : 788
Book Description
Laser and Electron Beam Processing of Materials contains the papers presented at the symposium on "Laser and Electron Beam Processing of Materials," held in Cambridge, Massachusetts, in November 1979, sponsored by the Materials Research Society. The compilation presents reports and research papers on the use of directed energy sources, such as lasers and electron beams for materials processing. The majority of the materials presented emphasize results on semiconductor materials research. Substantial findings on research on metals, alloys, and other materials are presented as well. Topics covered by the papers include the use of scanned cw sources (both photons and electrons) to recrystallize amorphous layers, enhanced substitutional solubility, solute trapping, zone refining of impurities, and constitutional supercooling. The use of lasers and electron beams to anneal ion implant damage and contacts formation, processing of ion-implanted metals, and surface alloying of films deposited on metallic surfaces are also discussed. Metallurgists, engineers, and materials scientists will find the book very insightful.
Author: L.D. Laude Publisher: Springer Science & Business Media ISBN: 9400968906 Category : Technology & Engineering Languages : en Pages : 631
Book Description
The impact of Materials Science in our environment has probably never been as massive and decisive as it is today. In every aspect of our lives, progress has never been so dependent on the techniques involved in producing ever more sophisticated materials in ever larger quantities, nor so demanding for technologists to imagine novel processes and circumvent difficulties, or take up new challenges. Every technique is based on a physical process which is put into practice and optimized. The better we know that process, the better the optimization, and more powerful the technique. Laser processing of materials is inscribed in that context. As soon as powerful coherent light sources were made available, it was realized that such intense sources of energy could be used to "heat, melt and crystallize" materials, i.e., to promote phase transitions in atomic systems. As early as 1964, attempts in that direction were made but received very little (if any) attention. Reasons for this lack of interest were several. For one thing, laser technology was not fully developed, so that the process offered poor reliability and no versatility. Also, improving the existing techniques was believed to be sufficient to meet the needs of the time, and there was no real motivation to explore new ways. Finally, and more important, the fundamentals of the physics behind the scenes were, and continue to be, way out of the runni~g stream.
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Author: Michael S. Shur
Author: J. S. Williams
Author: H. Ryssel
Author: S. Coffa
Author: Leonard C. Feldman
Author: 
Author: 
Author: C.W. White
Author: L.D. Laude
Author: