Pulsed Ion Beam Surface Analysis (PIBSA) as a Means of In-situ Real-time Analysis of Thin Films During Growth PDF Download
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Author: Publisher: ISBN: Category : Languages : en Pages : 23
Book Description
Low energy (5-15 keV) pulsed ion beam surface analysis (PIBSA) comprises several different surface spectroscopies which provide a wide range of information relevant to growth of single and multi-component semiconductor, metal and metal oxide thin f@ and layered structures. Ion beam methods have not been widely used as an in-situ monitor of thin film growth. PIBSA has been developed as a non-destructive, in-situ, real-time probe of thin film composition and structure which does not physically interfere with deposition. Several PIBSA versions are exceptionally surface-specific, yet can yield high resolution data at ambient pressures in excess of 1 m Torr (4-5 orders of magnitude higher than conventional surface analytic methods). Therefore, PIBSA is ideal for studying ultra-thin layers and atomically abrupt interfaces. PIBSA instrumentation designed for use as an in-situ, real-time monitor of growth processes for single and multi-component thin films and layered structures is described. Representative data are shown for in-situ analysis of Pb and Zr layers at room temperature and high vacuum, as well as under conditions for growth of PZT perovskite films on MgO and RuO2 substrates.
Author: Publisher: ISBN: Category : Languages : en Pages : 23
Book Description
Low energy (5-15 keV) pulsed ion beam surface analysis (PIBSA) comprises several different surface spectroscopies which provide a wide range of information relevant to growth of single and multi-component semiconductor, metal and metal oxide thin f@ and layered structures. Ion beam methods have not been widely used as an in-situ monitor of thin film growth. PIBSA has been developed as a non-destructive, in-situ, real-time probe of thin film composition and structure which does not physically interfere with deposition. Several PIBSA versions are exceptionally surface-specific, yet can yield high resolution data at ambient pressures in excess of 1 m Torr (4-5 orders of magnitude higher than conventional surface analytic methods). Therefore, PIBSA is ideal for studying ultra-thin layers and atomically abrupt interfaces. PIBSA instrumentation designed for use as an in-situ, real-time monitor of growth processes for single and multi-component thin films and layered structures is described. Representative data are shown for in-situ analysis of Pb and Zr layers at room temperature and high vacuum, as well as under conditions for growth of PZT perovskite films on MgO and RuO2 substrates.
Author: Publisher: ISBN: Category : Languages : en Pages : 25
Book Description
We have developed a time-of-flight (TOF) ion scattering and direct recoil spectrometer (ISS/DRS) to study the surface composition and reconstruction of metals, metal-oxides, and semiconductors, and to provide in situ characterization of the thin-film deposition process. In situ, real-time study of Pb, Zr, and Ru ultrathin films produced by ion beam sputter deposition is presented as demonstration of pulsed ion beam surface analysis (PIBSA) as a means of characterizing monolayer and submonolayer growth, both in UHV and in mTorr oxygen background. The capability of performing surface analysis at pressures>10−3 Torr is unique to pulsed ion beam surface analysis among surface analytical methods and enables the in situ monitoring of oxide thin-film growth processes and surface-gas phase reactions. Using angular-resolved ISS (ARISS), combined with Auger electron spectroscopy (AES), we studied the oxygen adsorption and reconstruction of (001) oriented InSb thin-film surfaces. It was found that the adsorption of molecular oxygen on the InSb (001) surface is consistent with the Langmuir model. Oxygen adsorption preferentially occurs on the antimony sites corresponding to the extension of the lattice into the vacuum and reduces the inward contraction of the first two layers of the clean InSb (001) surface relative to the bulk atomic spacing.
Author: Publisher: ISBN: Category : Research Languages : en Pages : 1218
Book Description
Sections 1-2. Keyword Index.--Section 3. Personal author index.--Section 4. Corporate author index.-- Section 5. Contract/grant number index, NTIS order/report number index 1-E.--Section 6. NTIS order/report number index F-Z.
Author: Publisher: ISBN: Category : Languages : en Pages : 15
Book Description
Time-of-flight ion scattering and recoil spectroscopy (TOF-ISARS) enables the characterization of the composition and structure of surfaces with 1-2 monolayer specificity. It will be shown that surface analysis is possible at ambient pressures greater than 3 mTorr using TOF-ISARS techniques; allowing for real-time, in situ studies of film growth processes. TOF-ISARS comprises three analytical techniques: ion scattering spectroscopy (ISS), which detects the backscattered primary ion beam; direct recoil spectroscopy (DRS), which detects the surface species recoiled into the forward scattering direction; and mass spectroscopy of recoiled ions (MSRI), which is 3 variant of DRS capable of isotopic resolution for all surface species--including H and He. The advantages and limitations of each of these techniques will be discussed. The use of the three TOF-ISARS methods for real-time, in situ film growth studies at high ambient pressures will be illustrated. It will be shown that MSRI analysis is possible during sputter deposition. It will be also be demonstrated that the analyzer used for MSRI can also be used for time of flight secondary ion mass spectroscopy (TOF-SIMS) under high vacuum conditions. The use of a single analyzer to perform the complimentary surface analytical techniques of MSRI and SIMS is unique. The dwd functionality of the MSRI analyzer provides surface information not obtained when either MSRI or SIMS is used independently.
Author: Edward V. Barnat Publisher: Springer Science & Business Media ISBN: 1461504112 Category : Technology & Engineering Languages : en Pages : 151
Book Description
Diffusion Barrier Stack - 5 nm -3 nm -2 nm :. . . -. . . . : . . O. 21-lm Figure 2: Schematic representing a cross-sectional view of the topography that is encountered in the processing of integrated circuits. (Not to scale) these sub-micron sized features is depicted in Fig. 2. The role of the diffusion barrier is to prevent the diffusion of metallic ions into the interlayer dielectric (lLD). Depending on the technology, in particular the choice of the ILD and the metal interconnect, the diffusion barrier may be Ti, Ta, TiN, TaN, or a multi-layered structure of these materials. The adhesion of the barrier to the dielectric, the conformality of the barrier to the feature, the physical structure of the film, and the chemical composition of the film are key issues that are determined in part by the nature of the deposition process. Likewise, after the growth of the barrier, a conducting layer (the seed layer) is needed for subsequent filling of the trench by electrochemical deposition. Again, the growth process must be able to deposit a film that is continuous along the topography of the sub-micron sized features. Other factors of concern are the purity and the texture of the seed layer, as both of these factors influence the final resistivity of the metallic interconnect. Sputter-deposited coatings are also commonly employed for their electro-optical properties. For example, an electrochromic glazing is used to control the flux of light that is transmitted through a glazed material.
Author: A. R. González-Elipe Publisher: World Scientific Publishing Company ISBN: 9781860943515 Category : Science Languages : en Pages : 283
Book Description
An introductory manual for Ion Assisted Deposition (IAD) procedures of thin films. Addressed to researchers, post-graduates and even engineers with little or no experience, the book reviews the basic concepts related to the interaction of low energy ion beams with materials.
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Author: Alexander Heinrich Mueller
Author: Edward V. Barnat
Author: A. R. González-Elipe