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Author: S. B. Krupanidhi Publisher: ISBN: Category : Languages : en Pages : 16
Book Description
Pulsed UV excimer laser ablation was employed to deposit multi-axial, bi-axial and uni-axial ferroelectric compositions of PZT, bismuth titanate and lead germanate respectively. In general, a fluence lower than 2 J/cm2 caused a preferential evaporation of volatile components, resulting in stoichiometric imbalance. However, the fluences beyond 2 J/cm2 enabled the deposition of stoichiometric thin films of multi-component oxide systems. The intrinsic bombardment due to the energetic ablated species during the thin film deposition seemed to influence the composition, structure, orientation and the electrical properties. The electrical characterization of ferroelectric films indicated a dielectric constant of 800-1000, a P, of 32 micron C/cm2 and E sub c of 130KV/cm for polycrystalline PZT films and the corresponding quantities were measured to be 150, 7 micron C/cm2 and 20 KV/cm for in-situ crystallized c-axis preferred oriented bismuth titanate films. Lead germanate thin films oriented along c-axis (OO3) showed a dielectric constant of 30, a P sub r of 2.5 micron C/cm2 and E sub c of 55 KV/cm.
Author: S. B. Krupanidhi Publisher: ISBN: Category : Languages : en Pages : 16
Book Description
Pulsed UV excimer laser ablation was employed to deposit multi-axial, bi-axial and uni-axial ferroelectric compositions of PZT, bismuth titanate and lead germanate respectively. In general, a fluence lower than 2 J/cm2 caused a preferential evaporation of volatile components, resulting in stoichiometric imbalance. However, the fluences beyond 2 J/cm2 enabled the deposition of stoichiometric thin films of multi-component oxide systems. The intrinsic bombardment due to the energetic ablated species during the thin film deposition seemed to influence the composition, structure, orientation and the electrical properties. The electrical characterization of ferroelectric films indicated a dielectric constant of 800-1000, a P, of 32 micron C/cm2 and E sub c of 130KV/cm for polycrystalline PZT films and the corresponding quantities were measured to be 150, 7 micron C/cm2 and 20 KV/cm for in-situ crystallized c-axis preferred oriented bismuth titanate films. Lead germanate thin films oriented along c-axis (OO3) showed a dielectric constant of 30, a P sub r of 2.5 micron C/cm2 and E sub c of 55 KV/cm.
Author: Robert Eason Publisher: John Wiley & Sons ISBN: 0470052112 Category : Science Languages : en Pages : 754
Book Description
Edited by major contributors to the field, this text summarizes current or newly emerging pulsed laser deposition application areas. It spans the field of optical devices, electronic materials, sensors and actuators, biomaterials, and organic polymers. Every scientist, technologist and development engineer who has a need to grow and pattern, to apply and use thin film materials will regard this book as a must-have resource.
Author: S. B. Krupanidhi Publisher: ISBN: Category : Languages : en Pages : 20
Book Description
Recent developments in ferroelectric thin film deposition involving plasma based approaches, are described, which include (a) multi-magnetron. sputter deposition, (b) Multi-ion-beam reactive sputter (MIBERS) deposition, (c) Pulsed excimer laser ablation and (d) ECR (Electron cyclotron resonance) plasma assisted deposition. These methods commonly prevailed intrinsic low energy ion bombardment during the growth process, which may be used for the control over composition, crystallization temperature and microstructure. A low energy (60 - 75 eV) ion bombardment of the ferroelectric Pb(Zr, Ti)03 thin films indicated a reduction in the phase formation/crystallization temperature, improved the electrical properties, microstructure and the surface smoothness. Discussion is presented emphasizing the effects of low energy bombardment in different deposition processes. Recent findings using rapid thermal annealing process are also described.
Author: Yilu Li Publisher: ISBN: Category : Electronic dissertations Languages : en Pages : 97
Book Description
Pulsed ultraviolet light from a XeF excimer laser was used to grow thin films of zinc oxide and tin dioxide on (111) p-type silicon wafers within a versatile high vacuum laser deposition system. This pulsed laser deposition system was self-designed and self-built. Parameters such as pressure, target temperature, and distance from the target to the substrate can be adjusted in the system. Scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction spectroscopy, Raman spectroscopy and ellipsometry were used to analyze the structures and properties of ZnO and SnO2 thin films. The critical temperature required to fabricate a crystalline ZnO thin film by pulsed laser deposition was found and has been confirmed. For the SnO2 thin film, the critical temperature required to generate a crystalline structure could not be found because of the temperature limit of the substrate heater used in the experiment. In SnO2 thin films, thermal annealing has been used to convert into crystalline structure with (110), (101) and (211) orientations. After fabricating the amorphous SnO2 thin films, they were put into an oven with specific temperatures to anneal them. The minimum annealing temperature range was found for converting the amorphous SnO2 thin films into SnO2 thin films with a crystalline structure. Thermal annealing has also been applied to some amorphous ZnO thin films which were fabricated under the critical temperature required to produce crystalline ZnO thin films. The minimum annealing temperature range for amorphous ZnO thin films was found and only one orientation (002) shown after annealing. Laser annealing technology has also been applied for converting both amorphous ZnO and SnO2 thin films, and results show that this method was not well suited for this attempt. ZnO thin films and SnO2 thin films with a crystalline structure have inportant widely used in industry, for example, application in devices such as solar cells and UV or blue-light-emitting devices. The aim of this research is to help improving the manufacturing process of ZnO and SnO2 thin films.
Author: KOJI SUGIOKA. Publisher: ISBN: 9783319695372 Category : Lasers in engineering Languages : en Pages :
Book Description
This handbook provides a comprehensive review of the entire field of laser micro and nano processing, including not only a detailed introduction to individual laser processing techniques but also the fundamentals of laser-matter interaction and lasers, optics, equipment, diagnostics, as well as monitoring and measurement techniques for laser processing. Consisting of 11 sections, each composed of 4 to 6 chapters written by leading experts in the relevant field. Each main part of the handbook is supervised by its own part editor(s) so that high-quality content as well as completeness are assured. The book provides essential scientific and technical information to researchers and engineers already working in the field as well as students and young scientists planning to work in the area in the future. Lasers found application in materials processing practically since their invention in 1960, and are currently used widely in manufacturing. The main driving force behind this fact is that the lasers can provide unique solutions in material processing with high quality, high efficiency, high flexibility, high resolution, versatility and low environmental load. Macro-processing based on thermal process using infrared lasers such as CO2 lasers has been the mainstream in the early stages, while research and development of micro- and nano-processing are becoming increasingly more active as short wavelength and/or short pulse width lasers have been developed. In particular, recent advances in ultrafast lasers have opened up a new avenue to laser material processing due to the capabilities of ultrahigh precision micro- and nanofabrication of diverse materials. This handbook is the first book covering the basics, the state-of-the-art and important applications of the dynamic and rapidly expanding discipline of laser micro- and nanoengineering. This comprehensive source makes readers familiar with a broad spectrum of approaches to solve all relevant problems in science and technology. This handbook is the ultimate desk reference for all people working in the field.
Author: Adarsh Rajashekhar Publisher: ISBN: Category : Languages : en Pages :
Book Description
Integration of ferroelectric/piezoelectric thin films, such as those of lead zirconate titanate (PZT), with temperature sensitive substrates (complementary metal oxide semiconductors (CMOS), or polymers) would benefit from growth at substrate temperatures below 400C. However, high temperatures are usually required for obtaining good quality PZT films via conventional routes like rapid thermal processing (>550C). Those conditions are not compatible either with polymer substrates or completed CMOS circuits and dictate exploration of alternative methods to realize integration with such substrates.In part of this work, factors influencing KrF excimer laser induced crystallization of amorphous sputtered Pb(Zr0.30Ti0.70)O3 thin films at substrate temperatures
Author: S. B. Krupanidhi
Author: S. B. Krupanidhi
Author: Robert Eason
Author: S. B. Krupanidhi
Author: J. J. Dubowski
Author: Yilu Li
Author: KOJI SUGIOKA.
Author: Christopher Scarfone
Author: Adarsh Rajashekhar
Author: Sang-Mo Koo
Author: