Author: Lynn E. Rehn
Publisher: Mrs Proceedings
ISBN:
Category : Science
Languages : en
Pages : 800

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Book Description
Author index.

Author: Bernd Schmidt
Publisher: Springer Science & Business Media
ISBN: 3211993568
Category : Technology & Engineering
Languages : en
Pages : 425

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Book Description
A comprehensive review of ion beam application in modern materials research is provided, including the basics of ion beam physics and technology. The physics of ion-solid interactions for ion implantation, ion beam synthesis, sputtering and nano-patterning is treated in detail. Its applications in materials research, development and analysis, developments of special techniques and interaction mechanisms of ion beams with solid state matter result in the optimization of new material properties, which are discussed thoroughly. Solid-state properties optimization for functional materials such as doped semiconductors and metal layers for nano-electronics, metal alloys, and nano-patterned surfaces is demonstrated. The ion beam is an important tool for both materials processing and analysis. Researchers engaged in solid-state physics and materials research, engineers and technologists in the field of modern functional materials will welcome this text.

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 766

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Book Description

Author: J Thomas
Publisher:
ISBN: 9781468408577
Category :
Languages : en
Pages : 536

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Book Description

Author: Jean-Paul Thomas
Publisher: Springer
ISBN:
Category : Science
Languages : en
Pages : 544

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Book Description
The extensive use of low-energy accelerators in non-nuclear physics has now reached the stage where these activities are recognized as a natural field of investigation. Many other areas in physics and chemistry have undergone similarly spectacular development: beam foil spectroscopy in atomic physics, studies in atomic collisions, materials implantation, defects creation, nuclear microanalysis, and so on. Now, this most recent activity by itself and in its evident connec tion with the others has brought a new impetus to both the funda mental and the applied aspects of materials science. A summer school on "Material Characterization Using Ion Beams" has resulted from these developments and the realization that the use of ion beams is not restricted to accelerators but covers a wide energy range in the developing technology. The idea of the ion beam as a common denominator of many act1v1t1es dealing with surface and near-surface characterization was enthu siastically received by many scientists and a school on this subject received the positive endorsement of NATO. The Advanced Study Institute on Materials Science has assumed for us the status of an "institution" leading to better contact among the many laboratories engaged in this field. The fourth Institute in this series was held in Aleria, Corsica, between August 22 and September 12, 1976.

Author: J. R. Bird
Publisher: Academic Press
ISBN:
Category : Science
Languages : en
Pages : 748

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Book Description
The use of ion beams for materials analysis involves many different ion-atom interaction processes which previously have largely been considered in separate reviews and texts. A list of books and conference proceedings is given in Table 2. This book is divided into three parts, the first which treats all ion beam techniques and their applications in such diverse fields as materials science, thin film and semiconductor technology, surface science, geology, biology, medicine, environmental science, archaeology and so on.

Author: Mengbing Huang
Publisher: National Library of Canada = Bibliothèque nationale du Canada
ISBN: 9780612284968
Category : Ion bombardment
Languages : en
Pages : 150

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Book Description
The continuous shrinkage of silicon devices is presenting challenges to ion beam processing and characterization of Si materials. In this thesis, we have studied some issues related to ion beam analysis and processing of silicon materials. First, we demonstrate the use of nuclear reaction analysis (NRA) combined with oxidation/etching to obtain the boron depth profile in a $\delta$-doped Si structure. Our measurements show very sharp interfaces between doped and undoped layers, with the attainable depth resolution of $\sim$0.7 nm. The technique is further applied to examine the B redistribution in the $\delta$-doped Si structure after solid phase epitaxial growth. Second, we study the effects of temperature and flux on the lattice damage induced by 1.0 MeV Si ion self-implantation. The decreasing rate of near-surface damage with implant temperature is distinctly different from that of end-of-range damage, suggesting that different mechanisms for damage formation are involved along the ion track. The flux effect on lattice damage is found to vary with temperature. Finally, we study boron transient enhanced diffusion (TED) under P and B isotope doping conditions. The effective boron diffusivity and the immobile boron density decrease with increasing P doping concentrations. This is consistent with the clustering model and suggests that the occurrence of TED for low boron concentration cannot be explained by the Fermi-level model. Compared to $\sp$B-free Si, $\sp$B TED in the $\sp$B-doped Si is retarded after the initial low-temperature annealing, while more broadening of the $\sp$B profile occurs in the $\sp$B-doped sample after a second annealing at high temperature. This phenomenon is discussed in terms of trapping of Si interstitials in $\sp$B doping background. This study also provides a means for testing the "+1" model which is important for TED modeling.

Author: R. Curtis Bird
Publisher: Elsevier
ISBN: 0080916899
Category : Technology & Engineering
Languages : en
Pages : 743

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Book Description
The use of ion beams for materials analysis involves many different ion-atom interaction processes which previously have largely been considered in separate reviews and texts. A list of books and conference proceedings is given in Table 2. This book is divided into three parts, the first which treats all ion beam techniques and their applications in such diverse fields as materials science, thin film and semiconductor technology, surface science, geology, biology, medicine, environmental science, archaeology and so on.

Author: Lucille A. Giannuzzi
Publisher: Springer Science & Business Media
ISBN: 038723313X
Category : Science
Languages : en
Pages : 362

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Book Description
Introduction to Focused Ion Beams is geared towards techniques and applications. This is the only text that discusses and presents the theory directly related to applications and the only one that discusses the vast applications and techniques used in FIBs and dual platform instruments.

Author: Jie Zhu
Publisher:
ISBN:
Category : Ion bombardment
Languages : en
Pages : 127

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Book Description