Process-based Compact Modeling and Analysis of Silicon-on-insulator CMOS Devices and Circuits, Including Double-gate MOSFETS PDF Download

Author: Meng-Hsueh Chiang
Publisher:
ISBN:
Category :
Languages : en
Pages : 215

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Author: Lixin Ge
Publisher:
ISBN:
Category : Metal oxide semiconductor field-effect transistors
Languages : en
Pages :

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ABSTRACT: This dissertation mainly focuses on the development of a University of Florida generic process/physics-based compact model (UFDG) for complementary metal-oxide-semiconductor (CMOS) double-gate (DG) field-effect transistors (FETs), enabling predictive device/circuit simulations and analysis of extremely scaled DG CMOS. Further, updates and improvement of the University of Florida SOI (UFSOI) fully depleted (FD) and partially depleted (or non-fully depleted, NFD) MOSFET models are developed and applied to gain insight into the behavior of scaled SOI MOSFETs in integrated CMOS circuits. As the critical dimensions of MOSFETs shrink below 100 nm, Monte Carlo simulations of such devices show strong off-equilibrium transport effects such as velocity overshoot. A Boltzmann transport equation (BTE)-based analytical model for quasi-ballistic transport (i.e., velocity overshoot) was developed for scaled MOSFETs, and implemented in physics-based compact models (UFSOI/PD, UFSOI/FD, and UFDG), with verification and applications to extremely scaled devices. As the end of the Semiconductor Industry Association (SIA) roadmap is approached, DG MOSFETs, having thin Si-film bodies, will possibly constitute the mainstream CMOS technology due to their superior scalability.

Author: Jerry G. Fossum
Publisher: Cambridge University Press
ISBN: 1107030412
Category : Technology & Engineering
Languages : en
Pages : 227

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Understand the theory, design and applications of FD/SOI MOSFETs and 3-D FinFETs with this concise and clear guide to FD/UTB transistors. Topics covered include short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM, and nanoscale UTB CMOS performances.

Author: Electrochemical Society. Electronics Division
Publisher: The Electrochemical Society
ISBN: 9781566773096
Category : Technology & Engineering
Languages : en
Pages : 482

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Author: Amara Amara
Publisher: Springer Science & Business Media
ISBN: 1402093411
Category : Technology & Engineering
Languages : en
Pages : 215

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Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called “scaling”, has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore’s Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore’s law and each dif?culty has found a solution.

Author: Yoon Soo Park
Publisher: World Scientific
ISBN: 9814487082
Category : Technology & Engineering
Languages : en
Pages : 413

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The 2002 Workshop on Frontiers in Electronics was the third in the series of WOFE workshops. Over 70 leading experts from academia, industry, and government agencies reported on the most recent developments in their fields and exchanged views on future trends and directions of the electronics and photonics industry. The issues they addressed ranged from system-on-chip to DNA doping, from ultrathin SOI to electrotextiles, from photonics integration on the ULSI platform to wide band gap semiconductor devices and solid state lighting. The rapid pace of electronic technology evolution compels a merger of different technical areas, and WOFE-02 provided a unique opportunity for cross-fertilization of the emerging fields of microelectronics, photonics, and nanoelectronics. The workshop was informal and stimulated provocative views, visionary outlooks, and discussions on controversial issues.

Author: Samar K. Saha
Publisher: CRC Press
ISBN: 1351831070
Category : Technology & Engineering
Languages : en
Pages : 385

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Book Description
Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond provides a modern treatise on compact models for circuit computer-aided design (CAD). Written by an author with more than 25 years of industry experience in semiconductor processes, devices, and circuit CAD, and more than 10 years of academic experience in teaching compact modeling courses, this first-of-its-kind book on compact SPICE models for very-large-scale-integrated (VLSI) chip design offers a balanced presentation of compact modeling crucial for addressing current modeling challenges and understanding new models for emerging devices. Starting from basic semiconductor physics and covering state-of-the-art device regimes from conventional micron to nanometer, this text: Presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models Discusses the major issue of process variability, which severely impacts device and circuit performance in advanced technologies and requires statistical compact models Promotes further research of the evolution and development of compact models for VLSI circuit design and analysis Supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices Includes exercise problems at the end of each chapter and extensive references at the end of the book Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond is intended for senior undergraduate and graduate courses in electrical and electronics engineering as well as for researchers and practitioners working in the area of electron devices. However, even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts from this book.

Author: Gennady Gildenblat
Publisher: Springer Science & Business Media
ISBN: 9048186145
Category : Technology & Engineering
Languages : en
Pages : 531

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Book Description
Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.

Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 946

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Author: Electrochemical Society. Meeting
Publisher: The Electrochemical Society
ISBN: 9781566773751
Category : Science
Languages : en
Pages : 538

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