Author: Xiaodong Wang
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 106
Book Description
Process and System Considerations for Low Temperature Oxide Low Pressure Chemical Vapor Deposition
Handbook of Chemical Vapor Deposition
Author: Hugh O. Pierson
Publisher: William Andrew
ISBN: 1437744885
Category : Technology & Engineering
Languages : en
Pages : 459
Book Description
Handbook of Chemical Vapor Deposition: Principles, Technology and Applications provides information pertinent to the fundamental aspects of chemical vapor deposition. This book discusses the applications of chemical vapor deposition, which is a relatively flexible technology that can accommodate many variations. Organized into 12 chapters, this book begins with an overview of the theoretical examination of the chemical vapor deposition process. This text then describes the major chemical reactions and reviews the chemical vapor deposition systems and equipment used in research and production. Other chapters consider the materials deposited by chemical vapor deposition. This book discusses as well the potential applications of chemical vapor deposition in semiconductors and electronics. The final chapter deals with ion implantation as a major process in the fabrication of semiconductors. This book is a valuable resource for scientists, engineers, and students. Production and marketing managers and suppliers of equipment, materials, and services will also find this book useful.
Publisher: William Andrew
ISBN: 1437744885
Category : Technology & Engineering
Languages : en
Pages : 459
Book Description
Handbook of Chemical Vapor Deposition: Principles, Technology and Applications provides information pertinent to the fundamental aspects of chemical vapor deposition. This book discusses the applications of chemical vapor deposition, which is a relatively flexible technology that can accommodate many variations. Organized into 12 chapters, this book begins with an overview of the theoretical examination of the chemical vapor deposition process. This text then describes the major chemical reactions and reviews the chemical vapor deposition systems and equipment used in research and production. Other chapters consider the materials deposited by chemical vapor deposition. This book discusses as well the potential applications of chemical vapor deposition in semiconductors and electronics. The final chapter deals with ion implantation as a major process in the fabrication of semiconductors. This book is a valuable resource for scientists, engineers, and students. Production and marketing managers and suppliers of equipment, materials, and services will also find this book useful.
Low Temperature Atmospheric Pressure Chemical Vapor Deposition of Group 14 Oxide Films
Chemical Vapor Deposition for Microelectronics
Author: Arthur Sherman
Publisher: William Andrew
ISBN:
Category : Computers
Languages : en
Pages : 240
Book Description
Presents an extensive, comprehensive study of chemical vapor deposition (CVD). Understanding CVD requires knowledge of fluid mechanics, plasma physics, chemical thermodynamics, and kinetics as well as homogenous and heterogeneous chemical reactions. This text presents these aspects of CVD in an integrated fashion, and also reviews films for use in integrated circuit technology.
Publisher: William Andrew
ISBN:
Category : Computers
Languages : en
Pages : 240
Book Description
Presents an extensive, comprehensive study of chemical vapor deposition (CVD). Understanding CVD requires knowledge of fluid mechanics, plasma physics, chemical thermodynamics, and kinetics as well as homogenous and heterogeneous chemical reactions. This text presents these aspects of CVD in an integrated fashion, and also reviews films for use in integrated circuit technology.
Analysis of Low Pressure Chemical Vapor Deposition Processes
Author: Karl Frederick Roenigk
Publisher:
ISBN:
Category :
Languages : en
Pages : 726
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 726
Book Description
Proceedings of the Thirteenth International Conference on Chemical Vapor Deposition
Author: Theodore M. Besmann
Publisher: The Electrochemical Society
ISBN: 9781566771559
Category : Science
Languages : en
Pages : 922
Book Description
Publisher: The Electrochemical Society
ISBN: 9781566771559
Category : Science
Languages : en
Pages : 922
Book Description
Low-pressure Chemical Vapor Deposition by Thermolysis of Disilane for Low-temperature Fabrication of Pn Junction Solar Cells
Author: Daniel D. Pates
Publisher:
ISBN:
Category :
Languages : en
Pages : 168
Book Description
A low-pressure chemical vapor deposition (LPCVD) reactor was built in order to implement a low-temperature process to deposit thin-films of silicon and fabricate pn junction photovoltaic devices using disilane as the source gas. This work represents the first reported work on using disilane for fabrication of photovoltaic devices. Films doped with diborane showed high growth rates of approximately 45-150 Å/min for temperatures ranging from 450 to 550 °C. Undoped films were grown and found to have significantly lower growth rates and were not practical at temperatures less than 500 °C. The films were completely amorphous for growth temperatures of less than 500 °C, and crystallinity increased sharply above 500 °C. The optical properties of the films exhibited low optical bandgaps of approximately 1.4-1.1 eV. The conductivity of the doped films was found to be on the order of 10−3 S/cm. Devices were fabricated by depositing p-type layers on n-type crystalline silicon substrates to form pn junctions. Diodes and pn junction photovoltaic devices were fabricated, exhibiting modest but promising performance, and were limited by parasitic series resistance. This research represents the first reported work on fabricating pn junction photovoltaic devices in a low-temperature LPCVD process using disilane, and serves as a solid foundation for future work to improve the process and fabricate novel device structures.
Publisher:
ISBN:
Category :
Languages : en
Pages : 168
Book Description
A low-pressure chemical vapor deposition (LPCVD) reactor was built in order to implement a low-temperature process to deposit thin-films of silicon and fabricate pn junction photovoltaic devices using disilane as the source gas. This work represents the first reported work on using disilane for fabrication of photovoltaic devices. Films doped with diborane showed high growth rates of approximately 45-150 Å/min for temperatures ranging from 450 to 550 °C. Undoped films were grown and found to have significantly lower growth rates and were not practical at temperatures less than 500 °C. The films were completely amorphous for growth temperatures of less than 500 °C, and crystallinity increased sharply above 500 °C. The optical properties of the films exhibited low optical bandgaps of approximately 1.4-1.1 eV. The conductivity of the doped films was found to be on the order of 10−3 S/cm. Devices were fabricated by depositing p-type layers on n-type crystalline silicon substrates to form pn junctions. Diodes and pn junction photovoltaic devices were fabricated, exhibiting modest but promising performance, and were limited by parasitic series resistance. This research represents the first reported work on fabricating pn junction photovoltaic devices in a low-temperature LPCVD process using disilane, and serves as a solid foundation for future work to improve the process and fabricate novel device structures.
Chemical Vapor Deposition
Author: Jong-Hee Park
Publisher: ASM International
ISBN: 161503224X
Category : Technology & Engineering
Languages : en
Pages : 477
Book Description
Publisher: ASM International
ISBN: 161503224X
Category : Technology & Engineering
Languages : en
Pages : 477
Book Description
Luminous Chemical Vapor Deposition and Interface Engineering
Author: Hirotsugu Yasuda
Publisher: CRC Press
ISBN: 1420030299
Category : Science
Languages : en
Pages : 840
Book Description
Providing in-depth coverage of the technologies and various approaches, Luminous Chemical Vapor Deposition and Interface Engineering showcases the development and utilization of LCVD procedures in industrial scale applications. It offers a wide range of examples, case studies, and recommendations for clear understanding of this innovative science.
Publisher: CRC Press
ISBN: 1420030299
Category : Science
Languages : en
Pages : 840
Book Description
Providing in-depth coverage of the technologies and various approaches, Luminous Chemical Vapor Deposition and Interface Engineering showcases the development and utilization of LCVD procedures in industrial scale applications. It offers a wide range of examples, case studies, and recommendations for clear understanding of this innovative science.
Chemistry for Electronic Materials
Author: K.F. Jensen
Publisher: Elsevier
ISBN: 0444596909
Category : Science
Languages : en
Pages : 215
Book Description
The chemical aspects of materials processing used for electronic applications, e.g. Si, III-V compounds, superconductors, metallization materials, are covered in this volume. Significant recent advances have occurred in the development of new volatile precursors for the fabrication of III-V semiconductor and metal [Cu, W] films by OMCVD. Some fundamentally new and wide-ranging applications have been introduced in recent times. Experimental and modeling studies regarding deposition kinetics, operating conditions and transport as well as properties of films produced by PVD, CVD and PECVD are discussed. The thirty papers in this volume report on many other significant topics also. Research workers involved in these aspects of materials technology may find here some new perspectives with which to augment their projects.
Publisher: Elsevier
ISBN: 0444596909
Category : Science
Languages : en
Pages : 215
Book Description
The chemical aspects of materials processing used for electronic applications, e.g. Si, III-V compounds, superconductors, metallization materials, are covered in this volume. Significant recent advances have occurred in the development of new volatile precursors for the fabrication of III-V semiconductor and metal [Cu, W] films by OMCVD. Some fundamentally new and wide-ranging applications have been introduced in recent times. Experimental and modeling studies regarding deposition kinetics, operating conditions and transport as well as properties of films produced by PVD, CVD and PECVD are discussed. The thirty papers in this volume report on many other significant topics also. Research workers involved in these aspects of materials technology may find here some new perspectives with which to augment their projects.