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Proceedings of the Tenth International Conference on the Physics of Semiconductors

Proceedings of the Tenth International Conference on the Physics of Semiconductors PDF Author: Seymour P. Keller
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 886

Book Description


Proceedings of the Tenth International Conference on the Physics of Semiconductors

Proceedings of the Tenth International Conference on the Physics of Semiconductors PDF Author: Seymour P. Keller
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 886

Book Description


Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices : (December 14 - 18, 1999) [New Delhi]. 2(2000)

Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices : (December 14 - 18, 1999) [New Delhi]. 2(2000) PDF Author:
Publisher: Allied Publishers
ISBN: 9788170239987
Category :
Languages : en
Pages : 800

Book Description


Light Sources 2004 Proceedings of the 10th International Symposium on the Science and Technology of Light Sources

Light Sources 2004 Proceedings of the 10th International Symposium on the Science and Technology of Light Sources PDF Author: A Zissis
Publisher: CRC Press
ISBN: 1482269171
Category : Science
Languages : en
Pages : 693

Book Description
Held every three years, The International Symposia on the Science and Technology of Light Sources (LS) provide a unique forum for the international community of engineers, scientists, research organizations, and academia from the lighting industry. In Light Sources 2004, leaders in their respective fields discuss the latest findings and exciting de

Semiconductors

Semiconductors PDF Author: T. F. Connolly
Publisher: Springer Science & Business Media
ISBN: 1468462016
Category : Science
Languages : en
Pages : 223

Book Description
And often on request from the issuing installation. USAEC reports are also available from International Atomic Energy Agency Kaerntnerring A 1010 Vienna, Austria National Lending Library Boston Spa, England Monographs and reports of the National Bureau 01 Standards are for sale by Superintendent of Documents U.S. Government Printing Office Washington, D.C. 20402 Theses, listed as Dissertation Abstracts + number, are available in North and South America from University Microfilms Dissertation Copies P.O. Box 1764 Ann Arbor, Michigan 48106 and elsewhere from University Microfilms, Ltd. St. John's Road Tylers Green Penn, Buckinghamshire England Conlenls Addendum ... xiii 1. Information Centers and Other Services ... 1 2. Journals ... 3 3. Methods of Crystal Growth - Books and Reviews ... 5 4. Semiconductors - General, Reviews, and Bibliographies ... 11 5. 1-V -VI Compounds ... 21 6. li-IV - V2 Compounds ... 23 7. II - V Compounds ... 29 a. General, Reviews, and Bibliographies ... 29 b. Zinc Compounds ... 30 1. Zn3P2" .. . .. . .. . . .. ... .. ... . .. ... . . .. ... .. . . 30 2. ZnAs ... 30 3. ZnSb ... 30 4. Zn Mixed Systems ... 31 c. Cadmium Compounds ... 31 31 1. Cd3P2' ... 2. Cd3As2 ... 31 3. CdSb, Cd3Sb2 ... 33 37 8. li-VI Compounds ... a. General, Reviews, and Bibliographies ... ... 37 ... b. Zinc Compounds ... . ... ... 39 ... 1. ZnO ... 39 Preparation and Properties ... 39 Electrical Properties ... ... 41 ... Optical Properties ... ... 45 ... Physical Properties and Structure ... ... 47 ... 2. ZnS ... 49 3. ZnSe ... 52 4. ZnTe ... ' ... 54 5. Zn Mixed Systems. ... ... 55 ... 55 c. Cadmium Compounds ... 55 1. CdS ... 2. CdSe ... 60 3. CdTe ... 61 4. CdTernaries ... ... 62 ... d. Mercury Compounds ... ... . 64 ...

Physics Of Semiconductors, The - Proceedings Of The Xxi International Conference (In 2 Volumes)

Physics Of Semiconductors, The - Proceedings Of The Xxi International Conference (In 2 Volumes) PDF Author: Ping Jiang
Publisher: World Scientific
ISBN: 9814554065
Category :
Languages : en
Pages : 2151

Book Description
The 21st conference proceedings continue the tradition of the ICPS series. The proceedings cover all aspects of semiconductor physics, including those related to materials, processing and devices. Plenary and invited speakers address areas of major interest.

Proceedings of the Twelfth International Conference on the Physics of Semiconductors

Proceedings of the Twelfth International Conference on the Physics of Semiconductors PDF Author: M. H. Pilkuhn
Publisher: Vieweg+teubner Verlag
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 1368

Book Description
The Twelfth International Conference on the Physics of Semiconductors was held at Stuttgart, Federal Republic of Germany, from July 15 to 19, 1974. The Conference was sponsored by the International Union of Pure and Applied Physics and we wish to thank this Organization as well as all the other Institutions and Companies listed on the preceding page for their substantial support. About 700 scientists from 31 countries came to Stuttgart in order to attend the Conference. Following the example of the previous Conference at Warsaw, a distinction was made between plenary invited and invited papers presented at parallel sessions. Altogether, the Proceedings contains 27 invited and 206 contributed papers. The members of the International Program Committee had the difficult task of making a selection from 550 abstracts. Their work was essential for the success of the Conference and it is gratefully acknow­ ledged. The number of pages alloted to each paper had to be limited in order to keep the Proceedings within reasonable size. In general, the papers in the Proceedings have been arranged according to the Conference Program except for the following changes: Each plenary invited paper was associated with an appropriate session, the sessions were put into a slightly different order and, in a few cases, new titles were introduced.

Hot Electrons in Semiconductors

Hot Electrons in Semiconductors PDF Author: N. Balkan
Publisher:
ISBN: 9780198500582
Category : Science
Languages : en
Pages : 536

Book Description
Under certain conditions electrons in a semiconductor become much hotter than the surrounding crystal lattice. When this happens, Ohm's Law breaks down: current no longer increases linearly with voltage and may even decrease. Hot electrons have long been a challenging problem in condensed matter physics and remain important in semiconductor research. Recent advances in technology have led to semiconductors with submicron dimensions, where electrons can be confined to two (quantum well), one (quantum wire), or zero (quantum dot) dimensions. In these devices small voltages heat electrons rapidly, inducing complex nonlinear behavior; the study of hot electrons is central to their further development. This book is the only comprehensive and up-to-date coverage of hot electrons. Intended for both established researchers and graduate students, it gives a complete account of the historical development of the subject, together with current research and future trends, and covers the physics of hot electrons in bulk and low-dimensional device technology. The contributions are from leading scientists in the field and are grouped broadly into five categories: introduction and overview; hot electron-phonon interactions and ultra-fast phenomena in bulk and two-dimensional structures; hot electrons in quantum wires and dots; hot electron tunneling and transport in superlattices; and novel devices based on hot electron transport.

Proceedings of the 17th International Conference on the Physics of Semiconductors

Proceedings of the 17th International Conference on the Physics of Semiconductors PDF Author: J.D. Chadi
Publisher: Springer Science & Business Media
ISBN: 1461576822
Category : Science
Languages : en
Pages : 1580

Book Description
The Proceedings of the 17th International Conference on the Physics of Semiconductors are contained in this volume. A record 1050 scientists from 40 countries participated in the Conference which was held in San Francisco August 6·1 0, 1984. The Conference was organized by the ICPS Committee and sponsored by the International Union of Pure and Applied Physics and other professional, government, and industrial organizations listed on the following pages. Papers representing progress in all aspects of semiconductor physics were presented. Far more abstracts (765) than could be presented in a five-day meeting were considered by the International Program Committee. A total of 350 papers, consisting of 5 plenary, 35 invited, and 310 contributed, were presented at the Conference in either oral or poster sessions. All but a few of the papers were submitted and have been included in these Proceedings. An interesting shift in subject matter, in comparison with earlier Conferences, is manifested by the large number of papers on surfaces, interfaces, and quantum wells. To facilitate the use of the Proceedings in finding closely related papers among the sometimes relatively large number of contributions within a main subject area, we chose not to arrange the papers strictly according to the Conference schedule. We have organized the book, as can be seen from the Contents, into specific subcategories and subdivisions within each major category. Plenary and invited papers have been placed together with the appropriate contributed papers.

Excitons at High Density

Excitons at High Density PDF Author: H. Haken
Publisher: Springer
ISBN: 3540378669
Category : Science
Languages : en
Pages : 303

Book Description


Festkörper Probleme

Festkörper Probleme PDF Author: H. J. Queisser
Publisher: Elsevier
ISBN: 1483157679
Category : Science
Languages : en
Pages : 405

Book Description
Festkorper Probleme XIII: Advances in Solid State Physics is a collection of papers from plenary lectures of the solid states division of the German Physical Society in Munster, on March 19-24, 1973. This collection deals with semiconductor physics, surface phenomena, and surface physics. One paper reviews the findings on experiments on the magnetic, optical, electrical, and structural properties of layer type crystals, particularly metal dichalcogenides. This book then discusses the van der Waals attraction using semi-classical methods to explain the correlation in different atoms. This discussion explains the application of the Schrodinger formalism and the Maxwell equations. One paper also reviews the energy distribution of electrons emitted from solids after ultraviolet radiation or monochromatic X-ray exposure. Another paper reviews the use of clean silicon surfaces associated with electron emitters showing ""negative electron affinity."" A paper then reviews the mechanism of charge-transfer devices, with emphasis on the physics of the transfer processes that happen in surface charge-coupled devices or bulk-charge-couple devices. This compendium will prove useful for materials physicists, scientists, and academicians in the field of advanced physics.