Author: W. Murray BullisPublisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 716
Book Description
Proceedings of the Second Symposium on Defects in Silicon
Author: W. Murray BullisPublisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 716
Book Description
Proceedings of the Electrochemical Society Symposium on Diagnostic Techniques for Semiconductor Materials and Devices
Author: P. Rai-ChoudhuryPublisher: The Electrochemical Society
ISBN: 9781566771399
Category : Technology & Engineering
Languages : en
Pages : 496
Book Description
ULSI Process Integration II
Author: Cor L. ClaeysPublisher: The Electrochemical Society
ISBN: 9781566773089
Category : Technology & Engineering
Languages : en
Pages : 636
Book Description
Proceedings of the Second Symposium on Thin Film Transistor Technologies
Author: Yue KuoPublisher: The Electrochemical Society
ISBN: 9781566770941
Category : Technology & Engineering
Languages : en
Pages : 428
Book Description
Physics Of Semiconductors - Proceedings Of The 20th International Conference (In 3 Volumes)
Author: E M AnastassakisPublisher: World Scientific
ISBN: 9814583634
Category :
Languages : en
Pages : 2768
Book Description
Gathering top experts in the field, the 20th ICPS proceedings reviews the progress in all aspects of semiconductor physics. The proceedings will include state-of-the-art lectures with special emphasis on exciting new developments. It should serve as excellent material for researchers in this and related fields.
Scientific and Technical Aerospace Reports
Author: Proceedings of the 17th International Conference on the Physics of Semiconductors
Author: J.D. ChadiPublisher: Springer Science & Business Media
ISBN: 1461576822
Category : Science
Languages : en
Pages : 1580
Book Description
The Proceedings of the 17th International Conference on the Physics of Semiconductors are contained in this volume. A record 1050 scientists from 40 countries participated in the Conference which was held in San Francisco August 6ยท1 0, 1984. The Conference was organized by the ICPS Committee and sponsored by the International Union of Pure and Applied Physics and other professional, government, and industrial organizations listed on the following pages. Papers representing progress in all aspects of semiconductor physics were presented. Far more abstracts (765) than could be presented in a five-day meeting were considered by the International Program Committee. A total of 350 papers, consisting of 5 plenary, 35 invited, and 310 contributed, were presented at the Conference in either oral or poster sessions. All but a few of the papers were submitted and have been included in these Proceedings. An interesting shift in subject matter, in comparison with earlier Conferences, is manifested by the large number of papers on surfaces, interfaces, and quantum wells. To facilitate the use of the Proceedings in finding closely related papers among the sometimes relatively large number of contributions within a main subject area, we chose not to arrange the papers strictly according to the Conference schedule. We have organized the book, as can be seen from the Contents, into specific subcategories and subdivisions within each major category. Plenary and invited papers have been placed together with the appropriate contributed papers.
Proceedings of the Second International Conference on Solid Surfaces, March 25-29, 1974, Kyoto International Conference Hall, Kyoto, Japan
Author: Microscopy of Semiconducting Materials 1987, Proceedings of the Institute of Physics Conference, Oxford University, April 1987
Author: CullisPublisher: CRC Press
ISBN: 9780854981786
Category : Technology & Engineering
Languages : en
Pages : 836
Book Description
The various forms of microscopy and related microanalytical techniques are making unique contributions to semiconductor research and development that underpin many important areas of microelectronics technology. Microscopy of Semiconducting Materials 1987 highlights the progress that is being made in semiconductor microscopy, primarily in electron probe methods as well as in light optical and ion scattering techniques. The book covers the state of the art, with sections on high resolution microscopy, epitaxial layers, quantum wells and superlattices, bulk gallium arsenide and other compounds, properties of dislocations, device silicon and dielectric structures, silicides and contacts, device testing, x-ray techniques, microanalysis, and advanced scanning microscopy techniques. Contributed by numerous international experts, this volume will be an indispensable guide to recent developments in semiconductor microscopy for all those who work in the field of semiconducting materials and research development.
Shallow-level Centers In Semiconductors - Proceedings Of The 7th International Conference
Author: C A J AmmerlaanPublisher: World Scientific
ISBN: 9814546674
Category :
Languages : en
Pages : 554
Book Description
This book is devoted to the specific physical and chemical properties of centers in semiconductors with shallow energy levels and electronic distributions of an extended size. Reports are included on the most advanced experimental and theoretical methods for identifying and further characterizing these materials. Attention is given to such topics as shallow-level centers in host semiconductors of lower dimensionality, centers in wide-bandgap semiconductors, shallow excited states of centers with deep ground states, passivation of centers, and other aspects of impurity control during crystal growth and processing with its relevance to applications.