Author: John C.. BeanPublisher:
ISBN:
Category : Molecular beam epitaxy
Languages : en
Pages : 619
Book Description
Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy
Author: John C.. BeanPublisher:
ISBN:
Category : Molecular beam epitaxy
Languages : en
Pages : 619
Book Description
Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy
Author: John Condon BeanPublisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 682
Book Description
Proceedings of the First International Symposium on Silicon Molecular Beam Epitaxy
Author: John Condon BeanPublisher:
ISBN:
Category : Molecular beam epitaxy
Languages : en
Pages : 478
Book Description
Silicon Molecular Beam Epitaxy
Author: Electrochemical Society. Electronics and Dielectrics and Insulation DivisionsPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Papers Presented at the 3rd International Symposium on Silicon Molecular Beam Epitaxy
Author: International Symposium on Silicon Molecular Beam Epitaxy 3, 1989, StrasbourgPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Silicon Molecular Beam Epitaxy
Author: Erich KasperPublisher: North Holland
ISBN:
Category : Science
Languages : en
Pages : 484
Book Description
This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy. A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattices (J.-M. Baribeau et al.). Optical properties of perfect and imperfect SiGe superlattices (K.B. Wong et al.). Confined phonons in stained short-period (001) Si/Ge superlattices (W. Bacsa et al.). Calculation of energies and Raman intensities of confined phonons in SiGe strained layer superlattices (J. White et al.). Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers (A.J. Pidduck et al.). The 698 meV optical band in MBE silicon (N. de Mello et al.). Silicon Growth Doping.
Proceedings of the First International Symposium on Silicon Molecular Beam Epitaxy, Held May 14-17, 1985, Toronto, Ohio
Author: International Symposium on Silicon Molecular Beam Epitaxy. 1, 1985, TorontoPublisher:
ISBN:
Category :
Languages : en
Pages : 455
Book Description
Silicon Molecular Beam Epitaxy 1995
Author: Papers Presented at the 3rd [Third] International Symposium on Silicon Molecular Beam Epitaxy, Symposium A of the 1989 E-MRS Conference
![Papers Presented at the 3rd [Third] International Symposium on Silicon Molecular Beam Epitaxy, Symposium A of the 1989 E-MRS Conference PDF](https://books.google.com/books/content/images/frontcover/i5KvYgEACAAJ?fife=w80-h100)
Author: International Symposium on Silicon Molecular Beam EpitaxyPublisher:
ISBN:
Category :
Languages : en
Pages : 462
Book Description
Silicon Molecular Beam Epitaxy
Author: E. KasperPublisher: CRC Press
ISBN: 1351093525
Category : Technology & Engineering
Languages : en
Pages : 411
Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.