Author: T. D. MoustakasPublisher: The Electrochemical Society
ISBN: 9781566771634
Category : Science
Languages : en
Pages : 250
Book Description
Proceedings of the First Symposium on III-V Nitride Materials and Processes
Author: T. D. MoustakasPublisher: The Electrochemical Society
ISBN: 9781566771634
Category : Science
Languages : en
Pages : 250
Book Description
Proceedings of the Third Symposium on III-V Nitride Materials and Processes
Author: T. D. MoustakasPublisher: The Electrochemical Society
ISBN: 9781566772129
Category : Technology & Engineering
Languages : en
Pages : 246
Book Description
Proceedings of the Third Symposium on III-V Nitride Materials and Processes
Author: T. D. MoustakasPublisher: The Electrochemical Society
ISBN: 9781566772129
Category : Technology & Engineering
Languages : en
Pages : 246
Book Description
Proceedings of the Second Symposium on III-V Nitride Materials and Processes
Author: C. R. AbernathyPublisher: The Electrochemical Society
ISBN: 9781566771870
Category : Science
Languages : en
Pages : 310
Book Description
Advances in III-V Nitride Semiconductor Materials and Devices
Author: Publisher: Curran Associates Incorporated
ISBN: 9781604234114
Category : Technology & Engineering
Languages : en
Pages : 432
Book Description
Gallium Nitride and Related Materials: Volume 395
Author: F. A. PoncePublisher:
ISBN:
Category : Science
Languages : en
Pages : 1008
Book Description
This book reflects the excitement in the scientific community about III-V nitrides. Based on papers presented at the First International Symposium on Gallium Nitride and Related Materials (ISGN-1), it reveals the large amount of work that has taken place since the field exploded with the announcement of commercial blue-light-emitting devices. The compound semiconductors in the III-V nitride systems are of increasing interest for high-performance optoelectronic and electronic device applications. These wide-bandgap semiconductor materials are also of great fundamental scientific interest because of their unique structural, electrical and optical properties. From the advances in the technologies for the heteroepitaxial growth of these materials, leading to improved quality and device performance, it is expected that III-V nitrides will soon be of significant practical and commercial interest. Topics include: crystal growth - substrates and early stages; molecular beam growth techniques; chemical vapor phase and alloys and novel growth techniques; structural properties; electronic properties; optical properties; point defects; hydrogen, etching and other materials processes; surfaces and metal contacts and devices.
Fratis Felicis Fabri Tractatus de Civitate Ulmensi, de eius Origine, Ordine, Regimine, de Civibus eius et Statu
Author: Thin Films and Heterostructures for Oxide Electronics
Author: Satishchandra B. OgalePublisher: Springer Science & Business Media
ISBN: 0387260897
Category : Technology & Engineering
Languages : en
Pages : 416
Book Description
Oxides form a broad subject area of research and technology development which encompasses different disciplines such as materials science, solid state chemistry, physics etc. The aim of this book is to demonstrate the interplay of these fields and to provide an introduction to the techniques and methodologies involving film growth, characterization and device processing. The literature in this field is thus fairly scattered in different research journals covering one or the other aspect of the specific activity. This situation calls for a book that will consolidate this information and thus enable a beginner as well as an expert to get an overall perspective of the field, its foundations, and its projected progress.
Containing Papers Presented at the European Materials Research Society 1997 Spring Meeting, Symposium L: III-V Nitrides Semiconductors and Ceramics: from Materials Growth to Device Applications, June 16-20, 1997, Strasbourg, France
Author: Emerging Ferroelectric Materials and Devices
Author: Publisher: Elsevier
ISBN: 0443193916
Category : Science
Languages : en
Pages : 186
Book Description
Semiconductors and Semimetals series, highlights new advances in the field, with this new volume presenting interesting chapters. Each chapter is written by an international board of authors. 2019 marks the year that nitride ferroelectrics were reported, and the indicators and mechanisms used for oxide ferroelectricity appear inadequate The emergence of nitride ferroelectrics has opened new frontiers in ferroelectric materials research and ferroelectric based technologies. This book is a direct consequence of this Draws upon the collective knowledge and expertise of leading scientists and researchers in this field to provide a holistic view on the state of ferroelectric nitride research and applications