Author: Publisher:
ISBN: 9781728130972
Category :
Languages : en
Pages :
Book Description
Proceedings of the 2019 IEEE High Power Diode Lasers and Systems Conference (HPD)
Author: 2019 IEEE High Power Diode Lasers and Systems Conference (HPD)
Author: IEEE StaffPublisher:
ISBN: 9781728130989
Category :
Languages : en
Pages :
Book Description
This conference is the premier biannual event addressing the latest advances in diode and diode pumped laser technology and systems applications The conference covers laser pump diodes diode pumped solid state and fibre lasers applications of diode laser technology in consumer products, processing, healthcare and biophotonics, defence and security
Proceedings of the 2017 High Power Diode Lasers and Systems Conference (HPD)
Author: Proceedings of the 2013 High Power Diode Lasers and Systems Conference (HPD)
Author: Institute of Electrical and Electronics EngineersPublisher:
ISBN:
Category : Diodes, Semiconductor
Languages : en
Pages :
Book Description
2015 IEEE High Power Diode Lasers and Systems Conference (HPD)
Author: IEEE StaffPublisher:
ISBN: 9781467391795
Category :
Languages : en
Pages :
Book Description
This conference is the premier annual event addressing the latest advances in diode and diode pumped laser technology and systems applications The conference covers laser pump diodes diode pumped solid state and fibre lasers applications of diode laser technology in consumer products, processing, healthcare and biophotonics, defence and security
Proceedings of the 2015 High Power Diode Lasers and Systems Conference (HPD)
Author: Proceedings of the 2015 High Power Diode Lasers and Systems Conference (HPD)
Author: Proceedings of the 2010 High Power Diode Lasers & Systems Conference (HPD '10)
Author: 2013 High Power Diode Lasers and Systems Conference (HPD 2013)
Author: Broad-Area Laser Bars for 1 kW-Emission
Author: Matthias M. Karow Publisher: Cuvillier Verlag
ISBN: 3736966261
Category : Technology & Engineering
Languages : en
Pages : 143
Book Description
ndustrial laser systems for material processing applications rely on the availability of highly efficient, high-brightness diode lasers. GaAs-based broad-area laser bars play a vital role in such applications as pump sources for high-beam-quality solid-state lasers and, increasingly, as direct processing tools. This work studies 940 nm-laser bars emitting 1 kW optical power at room temperature, identifying those physical mechanisms that are currently limiting electrical-to-optical conversion efficiency as well as lateral beam quality. In the process, several diagnostic studies on bars with varied lateral-longitudinal design were carried out. The effects of technological measures for performance optimization were analyzed, yielding a new benchmark in efficiency and lateral divergence. The studies into altered resonator lengths of 4 and 6 mm as well as fill factors between 69 and 87 % successfully reduce both the voltage dropping across the device and power saturation at high currents, enabling 66 % efficiency at the operation point. Concrete measures how to reach efficiencies ≥70 % are presented thereafter, showing that doubling the efficiency value of the first 1 kW-demonstration in 2007 – amounting to 35 % – is in near reach. Investigation of the beam quality bases on a herein proposed and realized concept, in which the far field is resolved for each individual bar emitter. In this way, it is possible to determine how far-field profiles vary along the bar width and how much these variations affect the overall bar far-field. Further, such effects specific to bar structures can be separated into non-thermal and thermal influences. The effect of mechanical chip deformation (bar smile) as well as neighboring-emitter interaction has been investigated for the first time in active kW-class devices, yielding a lateral divergence as low as 8.8° at the operation point.