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Nanoelectronics

Nanoelectronics PDF Author:
Publisher: Elsevier
ISBN: 0128133546
Category : Science
Languages : en
Pages : 477

Book Description
Nanoelectronics: Devices, Circuits and Systems explores current and emerging trends in the field of nanoelectronics, from both a devices-to-circuits and circuits-to-systems perspective. It covers a wide spectrum and detailed discussion on the field of nanoelectronic devices, circuits and systems. This book presents an in-depth analysis and description of electron transport phenomenon at nanoscale dimensions. Both qualitative and analytical approaches are taken to explore the devices, circuit functionalities and their system applications at deep submicron and nanoscale levels. Recent devices, including FinFET, Tunnel FET, and emerging materials, including graphene, and its applications are discussed. In addition, a chapter on advanced VLSI interconnects gives clear insight to the importance of these nano-transmission lines in determining the overall IC performance. The importance of integration of optics with electronics is elucidated in the optoelectronics and photonic integrated circuit sections of this book. This book provides valuable resource materials for scientists and electrical engineers who want to learn more about nanoscale electronic materials and how they are used. - Shows how electronic transport works at the nanoscale level - Demonstrates how nanotechnology can help engineers create more effective circuits and systems - Assesses the most commonly used nanoelectronic devices, explaining which is best for different situations

Nanoelectronics

Nanoelectronics PDF Author:
Publisher: Elsevier
ISBN: 0128133546
Category : Science
Languages : en
Pages : 477

Book Description
Nanoelectronics: Devices, Circuits and Systems explores current and emerging trends in the field of nanoelectronics, from both a devices-to-circuits and circuits-to-systems perspective. It covers a wide spectrum and detailed discussion on the field of nanoelectronic devices, circuits and systems. This book presents an in-depth analysis and description of electron transport phenomenon at nanoscale dimensions. Both qualitative and analytical approaches are taken to explore the devices, circuit functionalities and their system applications at deep submicron and nanoscale levels. Recent devices, including FinFET, Tunnel FET, and emerging materials, including graphene, and its applications are discussed. In addition, a chapter on advanced VLSI interconnects gives clear insight to the importance of these nano-transmission lines in determining the overall IC performance. The importance of integration of optics with electronics is elucidated in the optoelectronics and photonic integrated circuit sections of this book. This book provides valuable resource materials for scientists and electrical engineers who want to learn more about nanoscale electronic materials and how they are used. - Shows how electronic transport works at the nanoscale level - Demonstrates how nanotechnology can help engineers create more effective circuits and systems - Assesses the most commonly used nanoelectronic devices, explaining which is best for different situations

Circuits and Applications Using Silicon Heterostructure Devices

Circuits and Applications Using Silicon Heterostructure Devices PDF Author: John D. Cressler
Publisher: CRC Press
ISBN: 1420066951
Category : Technology & Engineering
Languages : en
Pages : 360

Book Description
No matter how you slice it, semiconductor devices power the communications revolution. Skeptical? Imagine for a moment that you could flip a switch and instantly remove all the integrated circuits from planet Earth. A moment’s reflection would convince you that there is not a single field of human endeavor that would not come to a grinding halt, be it commerce, agriculture, education, medicine, or entertainment. Life, as we have come to expect it, would simply cease to exist. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume covers SiGe circuit applications in the real world. Edited by John D. Cressler, with contributions from leading experts in the field, this book presents a broad overview of the merits of SiGe for emerging communications systems. Coverage spans new techniques for improved LNA design, RF to millimeter-wave IC design, SiGe MMICs, SiGe Millimeter-Wave ICs, and wireless building blocks using SiGe HBTs. The book provides a glimpse into the future, as envisioned by industry leaders.

Compound Semiconductor Integrated Circuits

Compound Semiconductor Integrated Circuits PDF Author: Tho T. Vu
Publisher: World Scientific
ISBN: 9789812796844
Category : Technology & Engineering
Languages : en
Pages : 366

Book Description
This is the book version of a special issue of the International Journal of High Speed Electronics and Systems, reviewing recent work in the field of compound semiconductor integrated circuits. There are fourteen invited papers covering a wide range of applications, frequencies and materials. These papers deal with digital, analog, microwave and millimeter-wave technologies, devices and integrated circuits for wireline fiber-optic lightwave transmissions, and wireless radio-frequency microwave and millimeter-wave communications. In each case, the market is young and experiencing rapid growth for both commercial and millitary applications. Many new semiconductor technologies compete for these new markets, leading to an alphabet soup of semiconductor materials described in these papers. The book also includes three papers focused on radiation effects and reliability in III-V semiconductor electronics, which are useful for reference and future directions. Moreover, reliability is covered in several papers separately for certain process technologies. Contents: Present and Future of High-Speed Compound Semiconductor IC''s (T Otsuji); The Transforming MMIC (E J Martinez); Distributed Amplifier for Fiber-Optic Communication Systems (H Shigematsu et al.); Microwave GaN-Based Power Transistors on Large-Scale Silicon Wafers (S Manohar et al.); Radiation Effects in High Speed III-V Integrated Circuits (T R Weatherford); Radiation Effects in III-V Semiconductor Electronics (B D Weaver et al.); Reliability and Radiation Hardness of Compound Semiconductors (S A Kayali & A H Johnston); and other papers. Readership: Engineers, scientists and graduate students working on high speed electronics and systems, and in the area of compound semiconductor integrated circuits.

Index of Conference Proceedings

Index of Conference Proceedings PDF Author: British Library. Document Supply Centre
Publisher:
ISBN:
Category : Conference proceedings
Languages : en
Pages : 870

Book Description


Fabrication of SiGe HBT BiCMOS Technology

Fabrication of SiGe HBT BiCMOS Technology PDF Author: John D. Cressler
Publisher: CRC Press
ISBN: 1420066897
Category : Technology & Engineering
Languages : en
Pages : 258

Book Description
SiGe HBT BiCMOS technology is the obvious groundbreaker of the Si heterostructures application space. To date virtually every major player in the communications electronics market either has SiGe up and running in-house or is using someone else’s SiGe fab as foundry for their designers. Key to this success lies in successful integration of the SiGe HBT and Si CMOS, with no loss of performance from either device. Filled with contributions from leading experts, Fabrication of SiGe HBT BiCMOS Technologies brings together a complete discussion of these topics into a single resource. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume examines the design, fabrication, and application of silicon heterostructure transistors. A novel aspect of this book the inclusion of numerous snapshot views of the industrial state-of-the-art for SiGe HBT BiCMOS technology. It has been carefully designed to provide a useful basis of comparison for the current status and future course of the global industry. In addition to the copious technical material and the numerous references contained in each chapter, the book includes easy-to-reference appendices on the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

Silicon Heterostructure Handbook

Silicon Heterostructure Handbook PDF Author: John D. Cressler
Publisher: CRC Press
ISBN: 1420026585
Category : Technology & Engineering
Languages : en
Pages : 1249

Book Description
An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.

Silicon Heterostructure Devices

Silicon Heterostructure Devices PDF Author: John D. Cressler
Publisher: CRC Press
ISBN: 1420066919
Category : Technology & Engineering
Languages : en
Pages : 468

Book Description
SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.

Conference Proceedings

Conference Proceedings PDF Author:
Publisher:
ISBN:
Category : Microwave devices
Languages : en
Pages : 458

Book Description


SOI Design

SOI Design PDF Author: Andrew Marshall
Publisher: Springer Science & Business Media
ISBN: 0306481618
Category : Technology & Engineering
Languages : en
Pages : 410

Book Description
This title introduces state-of-the-art design principles for SOI circuit design, and is primarily concerned with circuit-related issues. It considers SOI material in terms of implementation that is promising or has been used elsewhere in circuit development, with historical perspective where appropriate.

Analog Circuit Design

Analog Circuit Design PDF Author: Rudy J. van de Plassche
Publisher: Springer Science & Business Media
ISBN: 1475731981
Category : Technology & Engineering
Languages : en
Pages : 403

Book Description
This book contains the extended and revised editions of all the talks of the ninth AACD Workshop held in Hotel Bachmair, April 11 - 13 2000 in Rottach-Egem, Germany. The local organization was managed by Rudolf Koch of Infineon Technologies AG, Munich, Germany. The program consisted of six tutorials per day during three days. Experts in the field presented these tutorials and state of the art information is communicated. The audience at the end of the workshop selects program topics for the following workshop. The program committee, consisting of Johan Huijsing of Delft University of Technology, Willy Sansen of Katholieke Universiteit Leuven and Rudy van de Plassche of Broadcom Netherlands BV Bunnik elaborates the selected topics into a three-day program and selects experts in the field for presentation. Each AACD Workshop has given rise to publication of a book by Kluwer entitled "Analog Circuit Design". A series of nine books in a row provides valuable information and good overviews of all analog circuit techniques concerning design, CAD, simulation and device modeling. These books can be seen as a reference to those people involved in analog and mixed signal design. The aim of the workshop is to brainstorm on new and valuable design ideas in the area of analog circuit design. It is the hope of the program committee that this ninth book continues the tradition of emerging contributions to the design of analog and mixed signal systems in Europe and the rest of the world.