High Magnetic Fields In Semiconductor Physics - Proceedings Of The 16th International Conference PDF Download
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Author: Yong-jie Wang Publisher: World Scientific ISBN: 9814480568 Category : Science Languages : en Pages : 447
Book Description
This comprehensive volume covers the latest research on high magnetic fields in semiconductor physics presented at the 16th International Conference (SemiMag 16), held in Tallahassee, Florida, August 2-8, 2004.The book features papers from more than 130 participants including the work of the foremost experts in the fields.Much of the most cutting-edge research is covered by the contributions as well as a special focused session on the recently discovered microwave-induced zero resistance effect.
Author: Yong-jie Wang Publisher: World Scientific ISBN: 9814480568 Category : Science Languages : en Pages : 447
Book Description
This comprehensive volume covers the latest research on high magnetic fields in semiconductor physics presented at the 16th International Conference (SemiMag 16), held in Tallahassee, Florida, August 2-8, 2004.The book features papers from more than 130 participants including the work of the foremost experts in the fields.Much of the most cutting-edge research is covered by the contributions as well as a special focused session on the recently discovered microwave-induced zero resistance effect.
Author: Ping Jiang Publisher: World Scientific ISBN: 9814554065 Category : Languages : en Pages : 2151
Book Description
The 21st conference proceedings continue the tradition of the ICPS series. The proceedings cover all aspects of semiconductor physics, including those related to materials, processing and devices. Plenary and invited speakers address areas of major interest.
Author: Noboru Miura Publisher: Oxford University Press ISBN: 0198517564 Category : Science Languages : en Pages : 373
Book Description
This book summarizes most of the fundamental physical phenomena which semiconductors and their modulated structures exhibit in high magnetic fields. Readers can learn not only the basic theoretical background but also the present state of the art from the most advanced data in this rapidly growing research area.
Author: J.T. Devreese Publisher: Springer Science & Business Media ISBN: 1461326931 Category : Science Languages : en Pages : 483
Book Description
The 1982 Antwerp Advanced Study Institute on "Physics of Polarons and Excitons in Polar Semiconductors and Ionic Crystals" took place from July 26 till August 5 at the Conference Center Priorij Corsen donk, a restored monastery, close to the city of Antwerp. It was the seventh Institute in our series which started in 1971. This Advanced Study Institute, which was held fifty years after Landau introduced the polaron concept, can be considered as the third major international symposium devoted to the physics of pola rons. The first such symposium took place in St. Andrews in 1962 under the title "Polarons and Excitons" [I]. The early theoretical developments related to polarons were reviewed in depth at this meeting; the derivation of the polaron hamiltonian by Frohlich, the Frohlich weak coupling theory (and the equivalent weak coupling canonical transformations), the Landau-Pekar and Bogolubov strong coupling theory and the Feynman polaron model formulated with his path integrals. The main emphasis was on the polaron self-energy, effective mass and mobility. From the experimental side the first evidence for polaron effects was provided by the pioneering cyclotron and mobility measurements o~ the silver halides by F. e. Brown and his group. Also the significance of polaron effects for the under standing of excitons in ionic crystals was a central topic in St. Andrews. The second Advanced Study Institute concerning polaron physics was organized at the University of Antwerp (R. U. C. A.
Author: Yong-jie Wang
Author: Yong-jie Wang
Author: Gordon Davies
Author: 
Author: Ping Jiang
Author: Noboru Miura
Author: 
Author: National Institute of Standards and Technology (U.S.)
Author: United States. Bureau of Mines
Author: 
Author: J.T. Devreese