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Author: C.A.J. Ammerlaan Publisher: Elsevier ISBN: 0080983642 Category : Technology & Engineering Languages : en Pages : 518
Book Description
This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities.In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments in characterization techniques on epitaxially grown silicon, and silicon-on-insulators.
Author: C.A.J. Ammerlaan Publisher: Elsevier ISBN: 0080983642 Category : Technology & Engineering Languages : en Pages : 518
Book Description
This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities.In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments in characterization techniques on epitaxially grown silicon, and silicon-on-insulators.
Author: Yutaka Yoshida Publisher: Springer ISBN: 4431558004 Category : Technology & Engineering Languages : en Pages : 498
Book Description
This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
Author: Peter L.F. Hemment Publisher: Springer Science & Business Media ISBN: 9401142610 Category : Technology & Engineering Languages : en Pages : 351
Book Description
This proceedings volume contains the contributions of the speakers who attended the NATO Advanced Research Workshop on "Perspectives, Science and Technologies for Novel Silicon on Insulator Devices" held at the Sanatorium Pushcha OLema, Kyiv, th Ukraine from It" to 15 October 1998. This meeting was the second NATO Silicon on Insulator (SOl) Workshop to be held in st the Ukraine where the first meeting (Gurzuf, Crimea, 1 to 4th November 1994) focussed upon the physical and technical problems to be addressed in order to exploit the advantages of incorporating SOl materials in device and sensor technologies. On this occasion emphasis was placed upon firstly, promoting the use of SOl substrates for a range of novel device and circuit applications and secondly, addressing the economic issues of incorporating SOl processing technologies and device technologies within the framework of the resources available within the laboratories and factories of the Newly Independent States (NIS). The primary goal of both workshops has been the breaking of the barriers that inhibit closer collaboration between scientists and engineers in the NATO countries and the NIS. Indeed, it was a pleasure for attendees at the first meeting to renew acquaintances and for the first time attendees to make new contacts and enjoy the warm hospitality offered by our hosts in Kyiv. An outcome was the forging of new links and concrete proposals for future collaborations.
Author: Woo Publisher: CRC Press ISBN: 9780750303422 Category : Technology & Engineering Languages : en Pages : 1352
Book Description
Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.
Author: C.A.J. Ammerlaan
Author: C.A.J. Ammerlaan
Author: Dennis N. Schmidt
Author: British Library. Document Supply Centre
Author: Bernd O. Kolbesen (Chemiker.)
Author: Takao Abe
Author: Yutaka Yoshida
Author: Cor L. Claeys
Author: Howard R. Huff
Author: Peter L.F. Hemment
Author: Woo