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Author: Robert Leoni Publisher: World Scientific ISBN: 9814480800 Category : Technology & Engineering Languages : en Pages : 314
Book Description
This volume presents state-of-the-art works from top academic and research institutions in the areas of high performance semiconductor materials, devices, and circuits. A broad coverage of topics relating to high performance devices and circuits is featured here. There are 46 contributed papers covering a wide range of materials, device types, and applications. These papers describe the results of ongoing research in three general areas: high speed technologies for advanced mixed signal and terahertz applications, advanced technologies for high performance optical links and light sources, and high power density and high efficiency technologies for next generation microwave front ends and power electronics.
Author: Robert Leoni Publisher: World Scientific ISBN: 9814480800 Category : Technology & Engineering Languages : en Pages : 314
Book Description
This volume presents state-of-the-art works from top academic and research institutions in the areas of high performance semiconductor materials, devices, and circuits. A broad coverage of topics relating to high performance devices and circuits is featured here. There are 46 contributed papers covering a wide range of materials, device types, and applications. These papers describe the results of ongoing research in three general areas: high speed technologies for advanced mixed signal and terahertz applications, advanced technologies for high performance optical links and light sources, and high power density and high efficiency technologies for next generation microwave front ends and power electronics.
Author: Michael S. Shur Publisher: Springer Science & Business Media ISBN: 1489919899 Category : Technology & Engineering Languages : en Pages : 677
Book Description
GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.
Author: Tsunenobu Kimoto Publisher: John Wiley & Sons ISBN: 1118313526 Category : Technology & Engineering Languages : en Pages : 565
Book Description
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Author: Jaime Alberto Zamudio Flores Publisher: kassel university press GmbH ISBN: 3862193640 Category : Gallium nitride Languages : en Pages : 257
Book Description
This work presents a comprehensive modeling strategy for advanced large-size AlGaN/GaN HEMTs. A 22-element equivalent circuit with 12 extrinsic elements, including 6 capacitances, serves as small-signal model and as basis for a large-signal model. ANalysis of such capacitances leads to original equations, employed to form capacitance ratios. BAsic assumptions of existing parameter extractions for 22-element equivalent circuits are perfected: A) Required capacitance ratios are evaluated with device's top-view images. B) Influences of field plates and source air-bridges on these ratios are considered. The large-signal model contains a gate charge's non-quasi-static model and a dispersive-IDS model. THe extrinsic-to-intrinsic voltage transformation needed to calculate non-quasi-static parameters from small-signal parameters is improved with a new description for the measurement's boundary bias points. ALl IDS-model parameters, including time constants of charge-trapping and self-heating, are extracted using pulsed-DC IV and IDS-transient measurements, highlighting the modeling strategy's empirical character.
Author: Mike Golio Publisher: CRC Press ISBN: 1420036769 Category : Technology & Engineering Languages : en Pages : 1377
Book Description
The recent shift in focus from defense and government work to commercial wireless efforts has caused the job of the typical microwave engineer to change dramatically. The modern microwave and RF engineer is expected to know customer expectations, market trends, manufacturing technologies, and factory models to a degree that is unprecedented in the
Author: Paul Maki Publisher: World Scientific ISBN: 9814474746 Category : Technology & Engineering Languages : en Pages : 205
Book Description
This volume covers five emerging areas of advanced device technology: wide band gap devices, terahertz and millimeter waves, nanometer silicon and silicon-germanium devices, nanoelectronics and ballistic devices, and the characterization of advanced photonic and electronic devices. The papers by leading researchers in high speed and advanced electronic and photonic technology presented many “firsts” and breakthrough results, as has become a tradition with the Lester Eastman Conference, and will allow readers to obtain up-to-date information about emerging trends and future directions of these technologies. Key papers in each section present snap-shot and mini reviews of state-of-the-art and “hot off the press” results making the book required reading for engineers, scientists, and students working on advanced and high speed device technology.
Author: Publisher: Academic Press ISBN: 0080542948 Category : Science Languages : en Pages : 495
Book Description
Frontiers of Thin Film Technology, Volume 28 focuses on recent developments in those technologies that are critical to the successful growth, fabrication, and characterization of newly emerging solid-state thin film device architectures. Volume 28 is a condensed sampler of the Handbook for use by professional scientists, engineers, and students involved in the materials, design, fabrication, diagnostics, and measurement aspects of these important new devices.
Author: Publisher: Academic Press ISBN: 0080864503 Category : Technology & Engineering Languages : en Pages : 435
Book Description
This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.
Author: Robert Leoni
Author: Robert Leoni
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Author: Michael S. Shur
Author: Tsunenobu Kimoto
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Author: Jaime Alberto Zamudio Flores
Author: Mike Golio
Author: Paul Maki
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