Preparation of Silicon Substrates for Gallium Arsenide Solar Cells PDF Download
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Author: Spire Corporation Publisher: ISBN: Category : Gallium arsenide Languages : en Pages : 27
Book Description
This report describes a process and structure for the fabrication of high-efficiency GaAs-GaAlAs heteroface solar cells. A GaAs- GaAlAs solar cell with AM1 efficiency greater than 20% has been fabricated on a single-crystal GaAs substrate, and a GaAs-GaAlAs solar cell showing high open-circuit voltage has been fabricated on a single-crystal bulk-Ge substrate.
Author: Spire Corporation Publisher: ISBN: Category : Gallium arsenide Languages : en Pages : 27
Book Description
This report describes a process and structure for the fabrication of high-efficiency GaAs-GaAlAs heteroface solar cells. A GaAs- GaAlAs solar cell with AM1 efficiency greater than 20% has been fabricated on a single-crystal GaAs substrate, and a GaAs-GaAlAs solar cell showing high open-circuit voltage has been fabricated on a single-crystal bulk-Ge substrate.
Author: Chunfu Zhang Publisher: Springer Nature ISBN: 9811594805 Category : Technology & Engineering Languages : en Pages : 470
Book Description
This book explores the scientific basis of the photovoltaic effect, solar cell operation, various types of solar cells, and the main process used in their manufacture. It addresses a range of topics, including the production of solar silicon; silicon-based solar cells and modules; the choice of semiconductor materials and their production-relevant costs and performance; device structures, processing, and manufacturing options for the three major thin-film PV technologies; high-performance approaches for multi-junction, concentrator, and space applications; and new types of organic polymer and dye-sensitized solar cells. The book also presents a concept for overcoming the efficiency limit of today’s solar cells. Accessible for beginners, while also providing detailed information on the physics and technology for experts, the book is a valuable resource for researchers, engineers, and graduate students in fields such as physics, materials, energy, electrical and electronic engineering and microelectronics.
Author: Y. Nissim Publisher: Springer Science & Business Media ISBN: 9400909136 Category : Science Languages : en Pages : 361
Book Description
In the field of logic circuits in microelectronics, the leadership of silicon is now strongly established due to the achievement of its technology. Near unity yield of one million transistor chips on very large wafers (6 inches today, 8 inches tomorrow) are currently accomplished in industry. The superiority of silicon over other material can be summarized as follow: - The Si/Si0 interface is the most perfect passivating interface ever 2 obtained (less than 10" e y-I cm2 interface state density) - Silicon has a large thermal conductivity so that large crystals can be pulled. - Silicon is a hard material so that large wafers can be handled safely. - Silicon is thermally stable up to 1100°C so that numerous metallurgical operations (oxydation, diffusion, annealing ... ) can be achieved safely. - There is profusion of silicon on earth so that the base silicon wafer is cheap. Unfortunatly, there are fundamental limits that cannot be overcome in silicon due to material properties: laser action, infra-red detection, high mobility for instance. The development of new technologies of deposition and growth has opened new possibilities for silicon based structures. The well known properties of silicon can now be extended and properly used in mixed structures for areas such as opto-electronics, high-speed devices. This has been pioneered by the integration of a GaAs light emitting diode on a silicon based structure by an MIT group in 1985.
Author: Spire Corporation
Author: Spire Corporation
Author: Hossein Firouzi
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Author: C. E. Norman
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Author: Chunfu Zhang
Author: Y. Nissim