Preparation of Copper-indium-gallium-diselenide Precursor Films by Electrodeposition for Fabricating High Efficiency Solar Cells PDF Download
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Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In.sub. 1-n Ga.sub.x)Se.sub. 2, with the ratio of Ga/(In+Ga) being approximately 0.39.
Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In.sub. 1-n Ga.sub.x)Se.sub. 2, with the ratio of Ga/(In+Ga) being approximately 0.39.
Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In, Ga)Se.sub. 2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.
Author: Stephen Thacker Connor Publisher: Stanford University ISBN: Category : Languages : en Pages : 99
Book Description
In recent years, the field of photovoltaics has become increasingly important due to rising energy demand and climate change. While most solar cells are currently composed of crystalline silicon, devices with thinner films of inorganic absorber materials might allow production at a greater scale due to their lower materials cost. In particular, thin films of CuInS2 are promising solar absorber materials due to their high efficiencies and low required thicknesses. However, the fabrication of thin film solar cells currently requires expensive vacuum techniques. As an alternative, solution-based deposition techniques have been proposed as a route to low-cost and high-throughput electronic device fabrication. I have studied how film growth depends on solutuion deposited precursor film quality, with the goal of producing large grained films of CuInS2 through solution processing. In the first approach, we used solvothermal decomposition of organometallic precursors at moderate temperatures to produce nanoparticles of CuInS2. Thin films of these nanoparticles were cast onto molybdenum coated glass and further processed to create CuInS2 solar cells. We found that performance was dependent on film porosity, grain size, and stoichiometry of the nanoparticles. Films with grain sizes of ~200nm were attained, from which 1.3% efficient solar cells were made. In addition, we showed that this synthesis could be extended to produce CuInS2 nanoparticles with partial substitution of Fe, Zn, and Ga. In the second approach, we synthesized an air-stable hybrid organometallic/nanoparticle ink at room temperature in ambient conditions through a vulcanization reaction. This ink could be coated onto substrates in smooth layers, and further reactive annealing formed large grained CuInS2 films. This process was characterized, and a correlation between residual carbon and grain growth was found. Additionally, the chemical transformation between precursor layers and final sulfide thin film was analyzed, with an emphasis on the difference between sulfurization and selenization. We demonstrated that the sulfurization process was producing morphological defects due to its nucleation limited growth mechanism. However, it was modified to more closely resemble the diffusion limited selenization mechanism, thus producing flat films of CuInS2 with grain sizes of ~500nm.
Author: Gopal Nath Tiwari Publisher: Royal Society of Chemistry ISBN: 178262578X Category : Science Languages : en Pages : 585
Book Description
This book is an ideal reference text for teaching renewable energy to engineering and science students, as well as a reference book for scientists and professionals doing self study on the subject. The book has twelve chapters and starts with the definition and classification of renewable and non renewable energy and their status at global level. This chapter also contains the basic heat transfer mechanisms and laws of thermodynamics. It then deals with availability of solar radiation at different latitudes and energy and exergy analysis of flat plate collector, solar air collector, solar concentrator, evacuated tube collector, solar water heating system, solar distillation and solar cooker. The following chapter discusses the basics of semiconductor, its characteristics, working, characteristics of solar cell in dark and daylight situation, fundamentals of characteristic curves of semiconductor, fundamentals of PV module and array and some PVT systems. Detailed discussion on biomass, bio-fuels and biogas and their applications and the power produced by them, namely bio-power, is covered in the following chapters. Other renewable energy sources like hydropower, wind and geothermal are then covered as well as a chapter dealing with the working principle, basic theory and the capability to produce power from ocean thermal, tidal, wave and animal energy conversion systems. Subsequently, net CO2 mitigation, carbon credit, climate change and environmental impacts of all renewable energy resources are all covered followed by a discussion on the techno-economic feasibility of any energy sources as the backbone of its success and hence energy and economic analysis. The chapters deal the overall exergy of renewable energy sources by using the thermal and mechanical power and electrical energy as output. SI units are used throughout the book in solving various exercises in each chapter and conversion units of various physical and chemical parameters of metals and non-metals are also given in appendices.
Author: Rui Kamada Publisher: ProQuest ISBN: 9780549926849 Category : Copper Languages : en Pages :
Book Description
Cu(In, Ga)Se 2 film fabrication by the selenization of the mixed metal/metal-selenide precursors was investigated. For the precursor preparation, the combination of electro deposition, annealing, co-evaporation and pre-selenization methods were employed with sequential sputtering as a control. The precursor structures studied were CuSe/Ga/In, Cu 2-x Se/Ga/In, (Ga, In)-Se/Cu and metallic Cu-Ga/In as a control. Cu 2-x Se/Ga/In precursors were prepared from both electro deposition and co-evaporation. These precursors were selenized in H 2 Se at at 450°C for 5, 15, and 90min. The structures of the precursors and reacted films were examined in terms of the crystalline phases, compositions and morphologies by scanning electron microscopy, energy dispersive spectroscopy, symmetric and asymmetric X-ray diffraction, and Auger electron spectroscopy. The similar selenization reaction rates were obtained for the precursors with copper selenide/Ga/In structures as that for the control precursor while that for the (Ga, In)-Se/Cu seems to be slower than the control. Ga accumulation at the backside of the selenized film was universally observed for the precursors including the control Cu-Ga/In precursor, with the exception of one precursor with the structure of CuSe/Ga/In made from electro deposition. For the CuSe/Ga/In precursor, a hill-like Ga profile with the maximum Ga concentration at the middle of the film was obtained. In addition, increased Ga composition at the front side of the selenized film was obtained for the Cu 2-x Se/Ga/In precursor made from electro deposition compared to the control. The device performance of the solar cells made of these selenized films were also investigated and related to the film properties. The comparable conversion efficiencies were obtained from the three precursors with copper selenide/Ga/In structures as the control. The long wavelength edge of external quantum efficiency curve indicates larger bandgap than the control for the films made from the two precursors including the CuSe/Ga/In and Cu 2-x Se/Ga/In, both started with electron deposition. The enhanced Ga incorporation into Cu(In, Ga)Se 2 structure corresponds to the larger bandgap for these precursors.
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Author: United States. Patent and Trademark Office
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Author: Stephen Thacker Connor
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Author: 吳忠憲
Author: Gopal Nath Tiwari
Author: 陳富珊
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Author: Rui Kamada