Preparation and Optical Properties of Epitaxial Thin Films of Some Ii-vi Semiconducting Compounds PDF Download
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Author: Rudolf Ludeke Publisher: ISBN: Category : Languages : en Pages : 248
Book Description
The work describes mainly the preparation and optical properties of epitaxial thin films of some II-IV semiconducting compounds. In addition optical modulation experiments on both thin film and bulk samples are reported. Epitaxial thin films of CdTe, HgTe, the alloy system CdxHg1-xTe, and CdSe were prepared by a flash evaporation technique on BaF2 substrates. The effects of various deposition parameters on the electron diffraction and optical structures of CdTe and CdSe were analyzed in detail. Optical transmission measurements on the epitaxial thin films were made at room and liquid nitrogen temperatures in the spectral region from 2 to 6 eV. Two novel approaches of optical modulation methods were pursued: piezo-transmission on Ge and CdTe polycrystalline films and electroreflectivity on bulk CdTe using an integral sandwich technique. Both methods were used down to liquid helium temperatures.
Author: Rudolf Ludeke Publisher: ISBN: Category : Languages : en Pages : 248
Book Description
The work describes mainly the preparation and optical properties of epitaxial thin films of some II-IV semiconducting compounds. In addition optical modulation experiments on both thin film and bulk samples are reported. Epitaxial thin films of CdTe, HgTe, the alloy system CdxHg1-xTe, and CdSe were prepared by a flash evaporation technique on BaF2 substrates. The effects of various deposition parameters on the electron diffraction and optical structures of CdTe and CdSe were analyzed in detail. Optical transmission measurements on the epitaxial thin films were made at room and liquid nitrogen temperatures in the spectral region from 2 to 6 eV. Two novel approaches of optical modulation methods were pursued: piezo-transmission on Ge and CdTe polycrystalline films and electroreflectivity on bulk CdTe using an integral sandwich technique. Both methods were used down to liquid helium temperatures.
Author: A.G. Milnes Publisher: Elsevier ISBN: 0323141366 Category : Technology & Engineering Languages : en Pages : 430
Book Description
Heterojunctions and Metal-Semiconductor Junctions discusses semiconductor-semiconductor heterojunctions and metal-semiconductor heterojunctions, which are of significant practical importance today and also of considerable scientific interest, with worthwhile problems still to be explored and understood. Many classes of heterojunctions are believed to have new and valuable applications. Although some aspects of heterojunction behavior remain areas for continued scientific and technological study, the main outlines of the subject are clear. This book comprises nine chapters, and begins with an introduction to semiconductor heterojunctions. Succeeding chapters then discuss semiconductor p-n heterojunction models and diode behavior; heterojunction transistors; isotype (n-n, p-p) heterojunctions; optical properties of heterojunctions and heterojunction lasers; metal-semiconductor barriers; metal-semiconductor junction behavior; high yield photoemissive cathodes; and fabrication of heterojunctions. This book will be of interest to practitioners in the fields of applied physics.
Author: Stuart Irvine Publisher: John Wiley & Sons ISBN: 1119313015 Category : Technology & Engineering Languages : en Pages : 582
Book Description
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Author: Vasyl Tomashyk Publisher: Taylor & Francis ISBN: 1439895678 Category : Science Languages : en Pages : 544
Book Description
Doped by isovalent or heterovalent foreign impurities (F), II-VI semiconductor compounds enable control of optical and electronic properties, making them ideal in detectors, solar cells, and other precise device applications. For the reproducible manufacturing of the doped materials with predicted and desired properties, manufacturing technologists
Author: Mohamed Henini Publisher: Elsevier ISBN: 0128121378 Category : Science Languages : en Pages : 790
Book Description
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Author: Rudolf Ludeke
Author: Stanisław Ignatowicz
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Author: Norman N. Axelrod
Author: Rudolf Ludeke
Author: A.G. Milnes
Author: Stuart Irvine
Author: Vasyl Tomashyk
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Author: 
Author: Mohamed Henini