Preparation and Characterization of Hydrogenated Amorphous Silicon Thin Films and Thin Film Solar Cells Produced by Ion Plating Techniques. Second Quarterly Progress Report, 1 April-30 June 1979 PDF Download
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Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
Using quartz substrates, hydrogenated a-Si thin films have now been produced both by glow discharge decomposition of silane and by the controlled ion plating of high purity through glow discharges composed of silane, hydrogen, and argon using a modified Takagi apparatus. Thus far, thin films produced by both glow discharge decomposition of silane with and without magnetic confinement and by ion plating have been characterized and compared using x-ray deffractometry, infrared spectroscopy, optical absorption spectroscopy and by their temperature dependence of resistivity. Based on these results, the ion plating technique of producing a-Si thin films looks extremely encouraging. Films have been produced at approximately ten times the deposition rate obtained using glow discharge decomposition of silane, even with magnetic field containment. In addition the resulting thin film properties measured to date compared favorably with those obtained from our glow discharge produced films and the properties of glow discharge produced films reported in the literature.
Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
Using quartz substrates, hydrogenated a-Si thin films have now been produced both by glow discharge decomposition of silane and by the controlled ion plating of high purity through glow discharges composed of silane, hydrogen, and argon using a modified Takagi apparatus. Thus far, thin films produced by both glow discharge decomposition of silane with and without magnetic confinement and by ion plating have been characterized and compared using x-ray deffractometry, infrared spectroscopy, optical absorption spectroscopy and by their temperature dependence of resistivity. Based on these results, the ion plating technique of producing a-Si thin films looks extremely encouraging. Films have been produced at approximately ten times the deposition rate obtained using glow discharge decomposition of silane, even with magnetic field containment. In addition the resulting thin film properties measured to date compared favorably with those obtained from our glow discharge produced films and the properties of glow discharge produced films reported in the literature.
Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
Using quartz substrates, hydrogenated a-Si thin films have now been produced both by flow discharge decomposition of silane and by the controlled ion plating of high purity silicon through flow discharges composed of silane, hydrogen, and argon using a modified Takagi apparatus. Thus far, thin films produced by both glow discharge decomposition of silane with and without magnetic confinement and by ion plating have been characterized and compared using x-ray diffractometry, infrared spectrometry, optical absorption spectroscopy and by their temperature dependence of resistivity. Based on these results, the ion plating technique of producing a-Si thin films looks extremely encouraging. Films have been produced at approximately ten times the decomposition rate obtained using glow discharge decomposition of silane, even with magnetic field containment. In addition the resulting thin film properties measured to date compare favorably with those obtained from glow discharge produced films.
Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
Ion plating techniques for the preparation of hydrogenated amorphous silicon thin films have been successfully developed. The technique involves essentially the evaporation of elemental silicon through a d.c. produced hydrogen plasma. In this way hydrogen has been successfully incorporated into amorphous silicon films in concentrations as high as 30 atomic percent. Infrared spectroscopy indicates the usual SiHx stretching mode at approximately 2000 cm−1. Further evidence for the bonding of hydrogen was obtained from ESR measurement of hydrogenated and unhydrogenated samples. The measured unpaired spin density was a factor of 25 less in the hydrogenated sample. The optical absorption edges of the hydrogenated films fell in the usual range between 1.7 and 1.9 eV. Electrical conductivity measurements indicated a substantial reduction in the density of defect states in the gap as expected. It was also shown that hydrogenated amorphous silicon prepared by ion-plating could be doped by co-evaporation of the dopant element during film deposition. Both co-evaporated phosphorous and co-evaporated bismuth have been found to substantially increase the dark conductivity of a-Si:H while shifting the Fermi level towards the conduction band edge. An x-ray method for estimating the density and hydrogen content of a-Si:H has been developed. The measurement of strain in a-Si:H thin films is discussed. (WHK).
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