Preferentially Oriented Growth of Diamond Film on Silicon Substrate PDF Download

Author: Anupam K.C.
Publisher:
ISBN:
Category : Diamond thin films
Languages : en
Pages : 184

View

Book Description
A multistep deposition technique has been developed to grow and nucleate a diamond film directly on Silicon substrate in a hot filament chemical vapor deposition system. The high-quality diamond film is deposited on the silicon substrate with an intermediate nickel thin film with less graphitic co-deposition. The extremely high surface energies, interfacial lattice misfit and strain energies between the diamond film and the non- diamond substrate is the main problems for the oriented film on the substrate. Thus, an intermediate thin nickel film is deposited on the silicon substrate to develop the texture and the oriented diamond film by the process of annealing. The annealing temperature of the film is determined from the molten phase state of the nickel, silicon, carbon, and hydrogen. The growth kinetics and diamond film texture are also studied by the growth of diamond film on different nickel modification layers without annealing. The oriented diamond film is anticipated to have high thermal conductivity and low surface roughness and is useful as a substrate for high electron mobility transistor (HEMT) devices to improve the thermal boundary resistance (TBR). The purpose of this research is to grow an oriented diamond film on a silicon substrate without graphitic interlayers, and the results of this study will be valuable for the semiconductor industry such as the integration of diamond in ultra-high power (GaN/AlGaN) HEMT devices to increase the device lifetime and thermal management.

Author: Sattar Mirzakuchaki
Publisher:
ISBN:
Category : Diamond thin films
Languages : en
Pages : 272

View

Book Description
Chemical vapor deposited (CVD) diamond thin films grown homoepitaxially as well as on non-diamond substrates have been the subject of intense investigation since the beginning of the last decade. Diamond's remarkable properties such as physical hardness, chemical inertness, high thermal conductivity, high breakdown voltage, and high carrier mobility are the main factors for the attention it has received from many researchers around the world. Although these properties are somewhat degraded in polycrystalline diamond films, they are still superior to many other materials. One of the most potentially useful applications of diamond thin films is in the semiconductor industry. Although a few prototype devices such as field effect transistors and Schottky diodes have been fabricated on diamond, some major obstacles remain to be overcome before full scale commercial applications of diamond as a semiconductor is possible. The high cost of large area monocrystalline diamond substrates has forced researchers to look for alternative substrates for the heteroepitaxial growth of diamond. So far only marginal results have been reported on the growth of highly oriented diamond films and on the heteroepitaxial growth involving substrates that are as costly as diamond. Silicon, as the dominant material in semiconductor industry, has been the subject of much research as a substrate for the growth of polycrystalline diamond. Another problem in development of diamond as a semiconductor is the effective doping of diamond, particularly for n-type conductivity. Although many researchers have studied boron-doped (p-type) diamond thin films in the past several years, there have been few reports on the effects of doping diamond films with phosphorous (n-type). Once these two issues have been solved, other fabrication steps such as oxidation, etching, masking, etc. may be attempted. The present work is a study directed toward solving some of these problems by looking at in-situ doping of n-type hot filament CVD (HFCVD) grown diamond films on silicon substrates. The study includes electrical characterization, stable metallic contacts, effect of silicon substrate surface pretreatment, and selective area deposition. A number of different techniques for inducing diamond nucleation on Si substrates are studied and the resulting diamond films characterized by common techniques such as Raman spectroscopy, X-ray diffraction, optical and scanning electron microscopy, and profilometery. The effect of doping the diamond films with different concentrations of phosphorous as well as calculation of the activation energy by temperature measurement was also carried out in this work. A new technique is presented for the selective deposition of diamond films onto silicon substrates.

Author: Koji Kobashi
Publisher: Elsevier
ISBN: 0080525571
Category : Science
Languages : en
Pages : 350

View

Book Description
- Discusses the most advanced techniques for diamond growth - Assists diamond researchers in deciding on the most suitable process conditions - Inspires readers to devise new CVD (chemical vapor deposition Ever since the early 1980s, and the discovery of the vapour growth methods of diamond film, heteroexpitaxial growth has become one of the most important and heavily discussed topics amongst the diamond research community. Kobashi has documented such discussions with a strong focus on how diamond films can be best utilised as an industrial material, working from the premise that crystal diamond films can be made by chemical vapour disposition. Kobashi provides information on the process and characterization technologies of oriented and heteroepitaxial growth of diamond films.

Author: Jes Asmussen
Publisher: CRC Press
ISBN: 9780203910603
Category : Science
Languages : en
Pages : 692

View

Book Description
The Diamond Films Handbook is an important source of information for readers involved in the new diamond film technology, emphasizing synthesis technologies and diamond film applications. Containing over 1600 references, drawings, photographs, micrographs, equations, and tables, and contributions by experts from both industry and academia, it inclu

Author: Oliver A Williams
Publisher: Royal Society of Chemistry
ISBN: 1849737614
Category : Science
Languages : en
Pages : 553

View

Book Description
The exceptional mechanical, optical, surface and biocompatibility properties of nanodiamond have gained it much interest. Exhibiting the outstanding bulk properties of diamond at the nanoscale in the form of a film or small particle makes it an inexpensive alternative for many applications. Nanodiamond is the first comprehensive book on the subject. The book reviews the state of the art of nanodiamond films and particles covering the fundamentals of growth, purification and spectroscopy and some of its diverse applications such as MEMS, drug delivery and biomarkers and biosensing. Specific chapters include the theory of nanodiamond, diamond nucleation, low temperature growth, diamond nanowires, electrochemistry of nanodiamond, nanodiamond flexible implants, and cell labelling with nanodiamond particles. Edited by a leading expert in nanodiamonds, this is the perfect resource for those new to, and active in, nanodiamond research and those interested in its applications.

Author: Satoshi Koizumi
Publisher: John Wiley & Sons
ISBN: 3527623183
Category : Technology & Engineering
Languages : en
Pages : 374

View

Book Description
Here, leading scientists report on why and how diamond can be optimized for applications in bioelectronic and electronics. They cover such topics as growth techniques, new and conventional doping mechanisms, superconductivity in diamond, and excitonic properties, while application aspects include quantum electronics at room temperature, biosensors as well as diamond nanocantilevers and SAWs. Written in a review style to make the topic accessible for a wider community of scientists working in interdisciplinary fields with backgrounds in physics, chemistry, biology and engineering, this is essential reading for everyone working in environments that involve conventional electronics, biotechnology, quantum computing, quantum cryptography, superconductivity and light emission from highly excited excitonic systems.

Author: Hassan Golestanian
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 272

View

Book Description
Diamond's unique properties are potentially superior among the existing substrate materials for electronic applications. Among these properties, diamond's physical hardness, molar density, thermal conductivity, and sound velocity are the highest while its thermal expansion coefficient, compressibility, and bulk modules are the lowest. Because of this unique combination of properties, diamond has diverse applications in electronics, optics, and material coatings. Scientists around the world have been studying possible applications of diamond and its synthesis by chemical vapor deposition (CVD) in the semiconductor industry for almost the latter half of this century. The use of bulk crystals severely limits semiconductor applications of diamond due to difficulty in doping, device integration, high cost, and small area of bulk diamond. Therefore, a great deal of effort has been undertaken by researchers around the world on diamond synthesis by chemical vapor deposition (CVD). With some of the same limitations, homoepitaxial growth of diamond is not considered to be a feasible solution. As a result, heteroepitaxial growth of diamond is being considered to be an attractive possibility. Heteroepitaxial diamond growth has been the main subject of research since the first successful growth of diamond thin films on foreign substrates was reported. Polycrystalline and highly oriented diamond thin films grown on various substrates, especially silicon, have been reported over the years. There also have been reports of device fabrication on diamond such as diamond based point contact transistors, Schottky diodes, and field effect transistors at a laboratory level. The technology has been very challenging and there remain many obstacles to overcome before diamond based devices are to become part of the semiconductor industry. For example, epitaxial growth of CVD diamond, selective doping, n-type doping, and metallization of the grown films are not totally understood due to the polycrystalline nature of CVD diamond films. The objective of this work is the study of hot-filament chemical vapor deposited boron doped polycrystalline diamond thin films grown on both silicon and sapphire. A new horizontal gas flow configuration rather than the typical vertical gas flow configuration is utilized to provide larger area and better quality films grown on these substrates. The study includes characterization of grown films using scanning electron microscopy, Raman spectroscopy, X-ray diffraction analysis, and electrical characterization. Two types of contacts to the films grown on silicon substrates are fabricated enabling various electrical measurements. However, on sapphire substrates, low volume resistivity diamond films are grown despite severe adhesion problems. The effects of various substrate pre-treatments, growth conditions, and doping concentrations are presented.

Author: Christopher Nebel
Publisher: Academic Press
ISBN: 0080541038
Category : Technology & Engineering
Languages : en
Pages : 481

View

Book Description
This volume reviews the state of the art of thin film diamond, a very promising new semiconductor that may one day rival silicon as the material of choice for electronics. Diamond has the following important characteristics; it is resistant to radiation damage, chemically inert and biocompatible and it will become "the material" for bio-electronics, in-vivo applications, radiation detectors and high-frequency devices. Thin-Film Diamond is the first book to summarize state of the art of CVD diamond in depth. It covers the most recent results regarding growth and structural properties, doping and defect characterization, hydrogen in and on diamond as well as surface properties in general, applications of diamond in electrochemistry, as detectors, and in surface acoustic wave devices.· Accessible by both experts and non-experts in the field of semi-conductors research and technology, each chapter is written in a tutorial format· Helping engineers to manufacture devices with optimized electronic properties· Truly international, this volume contains chapters written by recognized experts representing academic and industrial institutions from Europe, Japan and the US

Author: Gordon Davies
Publisher: Institution of Electrical Engineers
ISBN:
Category : Nature
Languages : en
Pages : 464

View

Book Description
Diamond research holds the promise of applications as diverse as machine tooling, optical coatings, X-ray windows and light-emitting optoelectronic devices. This volume contains reviews, evaluations and guidance on over 2000 sources from scientific journals on bulk and thin film diamonds.

Author: Mark A. Prelas
Publisher: Routledge
ISBN: 135144249X
Category : Science
Languages : en
Pages : 1232

View

Book Description
Examines both mined and synthetic diamonds and diamond films. The text offers coverage on the use of diamond as an engineering material, integrating original research on the science, technology and applications of diamond. It discusses the use of chemical vapour deposition grown diamonds in electronics, cutting tools, wear resistant coatings, thermal management, optics and acoustics, as well as in new products.