Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 72
Book Description
Ku-band High Efficiency GaAs MMIC Power Amplifiers
Author: A High-reliability Ku-Band Power Amplifier Assembly with Integral Frequency Upconversion and Power Leveling
Author: David Warren CormanPublisher:
ISBN:
Category : Microwave amplifiers
Languages : en
Pages : 250
Book Description
A High Power Ku-band Solid State Amplifier
Author: Bernard D. GellerKu-band Modular MMICs for Up to 5W Power Blocks for VSAT Applications
Author: Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
An innovative approach to a quick design of multi-watts Ku-band power amplifiers for VSAT up-link applications is proposed. Starting from a set of specifically developed MMIC power macrocells, a modular imptementation is used to combine them into power modules requiring no adjustment and delivering up to 5W with 24dB associated gain in the 14-15.5GHz frequency band. The basic MMIC single chips exhibit a ldB gain compression output power of respectively : 200mW, 500mW and 1.6W. 3 W and 5W power modules are presented as examples.
"Ku Band Microwave Power Amplifier"
Author: Chinmay JoshiPublisher:
ISBN:
Category :
Languages : en
Pages : 72
Book Description
Ku-Band Microwave Power Amplifier By Chinmay Joshi Master of Science in Electrical Engineering The aim of the graduate project is to design a Ku-band microwave power amplifier that operates at 14.5 GHz frequency. A high-power GaAs FET, TIM1314-8UL BY TOSHIBA ELECTRIC has been used to design a power amplifier. Distributed elements are utilized to realize the input and output matching networks. The device is designed to achieve a linear power gain of 7.50dB and an output power up to 7.30dBm. As the design is two-stage, Lange Coupler is used to couple both stages. Lange Coupler is designed by using microstrip-line technology based on RO3006C substrate. NI-AWR is used for circuit simulations. It is one of the leading softwares used in RF & Microwave industries. Analytical calculations and results are verified using softwares like MATLAB, RF/Microwave E-Book by Dr. Matthew Radmanesh.
High Efficiency Class-F MMIC Power Amplifiers at Ku-Band
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 5
Book Description
Two high efficiency Ku-band pHEMT power amplifier MMICs are presented in this paper. A single, stage, high efficiency amplifier provides a peak power added efficiency of 57.6% with 10.5 dB associated gain and 26.5 dBm output power into a 50 Ohms load at 14 GHz. Additionally, a dual stage, high gain amplifier provides a peak power added efficiency of 50.4% with 19.7 dB associated gain and 27.5 dBm output power into a 50 Ohms load at 14.3 GHz. State-of-the-art efficiency performance at these frequencies is achieved through Class-F transistor operation. Process selection, circuit design, and measured results are described.
Ku-band High Power Amplifier System Functionality and Operation
Author: Cheng-Chuan FengPublisher:
ISBN:
Category : Power amplifiers
Languages : en
Pages : 118
Book Description
The subsystems and their respective functionality of a ku-band high power amplifier are carefully documented. Figures identifying physical components, wiring, contact points, switches, and valves with their labels on the system blueprints are presented. These figures will be helpful if system performance parameter adjustments are desired. Operation, maintenance, troubleshooting and testing procedures are also included to make this thesis a self-contained operator's manual for the high power amplifier.
Satellite Communications Systems and Technology
Author: Burton I. EdelsonPublisher: William Andrew
ISBN: 0815513704
Category : Science
Languages : en
Pages : 542
Book Description
Satellite Communications Systems and Technology
A Ku Band Monolithic Power Amplifier for TT & C Applications
Author: Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
The paper describes the design of a 38 dBm monolithic power amplifier at Ku band. The amplifier has to be used as the final stage of the downlink transmitter of a TT & C system. A commercial power p-HEMT process capable of handling a power density higher than 1 W/mm of active area has been selected for the amplifier design. The power capability of this process makes it possible to integrate in a monolithic chip the functionality up today supplied by hybrid modules. Since the circuit is a space product, the attention is focused on reliability issues; therefore performances have to be matched imposing the devices to work at de-rated conditions respect to the process maximum ratings. In this perspective, the device channel temperature becomes a very tight design objective and has to be carefully controlled by means of a thermal simulator. The paper describes the three dimensional thermal model built to predict the devices thermal behavior in the environment of a finite difference thermal simulator. The design of the circuit is also described from the specifications to the final layout.
Distortion in RF Power Amplifiers
Author: Joel VuoleviPublisher: Artech House
ISBN: 9781580536295
Category : Technology & Engineering
Languages : en
Pages : 280
Book Description
Here is a thorough treatment of distortion in RF power amplifiers. This unique resource offers expert guidance in designing easily linearizable systems that have low memory effects. It offers you a detailed understanding of how the matching impedances of a power amplifier and other RF circuits can be tuned to minimize overall distortion. What's more, you see how to build models that can be used for distortion simulations.