Plasma Enhanced Chemical Vapor Deposition of Thin Films and New Crystalline Model Compounds in the Systems Silicon-sulfur and Phosphorus-sulfur PDF Download

Author: Robert Ko Shibao
Publisher:
ISBN:
Category :
Languages : en
Pages : 392

View

Book Description

Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 812

View

Book Description

Author: Guanghui Yao
Publisher:
ISBN:
Category : Plasma-enhanced chemical vapor deposition
Languages : en
Pages : 148

View

Book Description

Author: DW. Hess
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 8

View

Book Description
The use of a radio frequency (rf) glow discharge or plasma has recently come into favor for the deposition of thin films. In plasma-enhanced chemical vapor deposition (PECVD), chemical reactions can be carried out at low (

Author: Gina Marie Buccellato
Publisher:
ISBN:
Category :
Languages : en
Pages : 230

View

Book Description

Author: Ashfaqul Islam Chowdhury
Publisher:
ISBN:
Category : Plasma-enhanced chemical vapor deposition
Languages : en
Pages : 374

View

Book Description

Author: Pio Capezzuto
Publisher: Elsevier
ISBN: 0080539106
Category : Science
Languages : en
Pages : 339

View

Book Description
Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Focuses on the plasma chemistry of amorphous silicon-based materials Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced Features an international group of contributors Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices

Author: Siri Suzanne Thompson
Publisher:
ISBN:
Category :
Languages : en
Pages : 138

View

Book Description

Author: Zhuo (Carol). Chen
Publisher:
ISBN:
Category : Chemical engineering
Languages : en
Pages :

View

Book Description
Nano-crystalline Si (nc-Si) is a promising candidate for photovoltaic applications due to its better stability compared to amorphous Si, and relatively easy to manufacture at low cost, by plasma enhanced chemical vapor deposition (PECVD), compared to single crystal Si. The crystalline volume fraction of nc-Si films needs to be well controlled to prevent light-induced degradation of the otherwise amorphous hydrogenated Si (a-Si:H). A layer-by-layer technique using two separate plasma sources for a-Si:H deposition and nano-crystallization was developed. A capacitively-coupled plasma (CCP) with SiH4/He feed gas was used to deposit thin a-Si:H layers that were subsequently exposed to a H2 or D2 inductively-coupled plasma (ICP) to induce crystallization in the films. Deposition and nano-crystallization were performed sequentially and periodically to grow thin films. Raman spectroscopy was used to characterize the films and determine the fraction of crystalline. The crystalline volume fraction obtained in this work ranged from 0% to 72%. Many short exposures (20 s or 5 s) to the plasmas were more effective in producing nano-crystalline Si compared to one long exposure (40 min. or 4 min.). In addition, the fraction of nano-crystalline Si increased with increasing H2 ICP-to-SiH4/He CCP exposure time ratio (from 1/4 to 3/2). The crystallites had columnar structure along the film growth direction based on transmission electron microscopy (TEM). Etching of films by the D2 plasma was monitored by mass spectrometry. At 250 oC, the amorphous Si etching rate (0.25 nm/min) was much lower than the deposition rate (1.4 nm/min), and that etching did not occur exclusively on the surface or the near surface region. The blueshift (by about 1 eV) of the dielectric constants peak, found by spectroscopic ellipsometry (SE), suggested the formation of nano-crystallites in the bulk of the films. It is proposed that by tailoring the CCP deposition time as well as the H2 ICP exposure time per cycle, the crystalline fraction and crystallite size of the resulting films can be controlled for more stable solar cell materials. Further, by spatially separating film deposition and nano-crystallization, each of these processes can be individually optimized, providing flexibility in controlling film nanostructure and properties

Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 896

View

Book Description