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Author: Chi H. Lee Publisher: Elsevier ISBN: 0323151183 Category : Technology & Engineering Languages : en Pages : 421
Book Description
Picosecond Optoelectronic Devices reviews the major developments in the field of picosecond optoelectronics. This book discusses the picosecond pulse generation with semiconductor diode lasers; gigabit optical pulse generation in integrated lasers and applications; and picosecond photoconductors. The picosecond optoelectronic devices based on optically injected electron-hole plasma; pulse forming with optoelectronic switches; and high-power picosecond switching in bulk semiconductors are also elaborated. This text likewise discusses the sub-picosecond electrical sampling and applications; InP optoelectronic switches; and picosecond chronography. Other topics include the picosecond optical control of transferred-electron devices; optoelectronic switch for pulsed power; and responses of TEDs to picosecond optical pulses. This publication is a good source for electrical engineers and researchers conducting work on picosecond optoelectronics.
Author: Chi H. Lee Publisher: Elsevier ISBN: 0323151183 Category : Technology & Engineering Languages : en Pages : 421
Book Description
Picosecond Optoelectronic Devices reviews the major developments in the field of picosecond optoelectronics. This book discusses the picosecond pulse generation with semiconductor diode lasers; gigabit optical pulse generation in integrated lasers and applications; and picosecond photoconductors. The picosecond optoelectronic devices based on optically injected electron-hole plasma; pulse forming with optoelectronic switches; and high-power picosecond switching in bulk semiconductors are also elaborated. This text likewise discusses the sub-picosecond electrical sampling and applications; InP optoelectronic switches; and picosecond chronography. Other topics include the picosecond optical control of transferred-electron devices; optoelectronic switch for pulsed power; and responses of TEDs to picosecond optical pulses. This publication is a good source for electrical engineers and researchers conducting work on picosecond optoelectronics.
Author: Frederick J. Leonberger Publisher: Springer Science & Business Media ISBN: 3642729703 Category : Science Languages : en Pages : 303
Book Description
Over the past five years, there has been an enormous increase in the inter est in and understanding of electronic and optoelectronic devices operating in the picosecond (multigigahertz) range. This has been fueled in a sig nificant way by the spectacular advances in picosecond laser technology, electro optic sampling, III-V devices, and wideband fiber optic systems. Partly to address these advances, a new conference jointly sponsored by the IEEE Lasers and Electrooptics Society (IEEE (LEOS)) and the Op tical Society of America (OSA) was founded and its first meeting held in March 1985. The purpose of this meeting was to bring together work ers in the areas of electronics and optoelectronics who share a common interest in the physics and technology of picosecond solid-state electronic and optoelectronic devices, their multigigahertz applications, and ultrafast measurement techniques. Emphasis was placed on the interdisciplinary as pects of these areas, since each area is covered by its own topical meeting. This meeting was quite successful and led to a second meeting, of which this volume forms the proceedings.
Author: Gerard A. Mourou Publisher: Springer Science & Business Media ISBN: 3642707807 Category : Technology & Engineering Languages : en Pages : 267
Book Description
Over the past decade, we have witnessed a number of spectacular advances in the fabrication of crystalline semiconductor devices due mainly to the pro gress of the different techni ques of heteroepitaxy. The di scovery of two dimensional behavior of electrons led to the development of a new breed of ultrafast electronic and optical devices, such as modulation doped FETs, permeable base transistors, and double heterojunction transistors. Comparable progress has been made in the domain of cryoelectronics, ultrashort pulse generation, and ultrafast diagnostics. Dye lasers can generate 8 fs signals after compression, diode lasers can be modulated at speeds close to 20 GHz and electrical signals are characterized with subpicosecond accuracy via the electro-optic effect. Presently, we are experiencing an important interplay between the field of optics and electronics; the purpose of this meeting was to foster and enhance the interaction between the two disciplines. It was logical to start the conference by presenting to the two different audiences, i. e. , electronics and optics, the state-of-the-art in the two res pective fields and to highlight the importance of optical techniques in the analysis of physical processes and device performances. One of the leading techniques in this area is the electro-optic sampling technique. This optical technique has been used to characterize transmission lines and GaAs devices. Carrier transport in semiconductors is of fundamental importance and some of its important aspects are stressed in these proceedings.
Author: Steven C. Moss Publisher: ISBN: Category : Languages : en Pages : 8
Book Description
Picosecond optoelectronic techniques were used to measure the electrical response of a submicron gate GaAs FET to optical excitation by picosecond laser pulses. Results indicated that carrier transport in these devices is strongly affected by screening of the applied electrical bias at high optical excitation levels. The use of these devices as ultrafast photodetectors and as generators of ultrafast transient electrical waveforms on GaAs integrated circuits was discussed.
Author: Publisher: ISBN: Category : Languages : en Pages : 155
Book Description
The purpose of this meeting was to bring together workers in the areas of electronics and optoelectronics who share a common interest in the physics and technology of picosecond solid state devices, their multi-gigahertz applications and ultrafast measurement techniques. Technical areas covered included: Optoelectronic Devices: high speed photodiodes and photoconductive devices; multi-gigahertz and mode-locked simiconductor lasers; integrated optical devices; fast optically bistable devices; Semiconductor Device Physics: transient transport phenomena; hot-electron effects; picosecond electronic and optical properties and conventional as well as superlattice and quantum well structures; physics of fast ultra-small structures; Symposia.
Author: Publisher: ISBN: Category : Languages : en Pages : 32
Book Description
Logic gates based on conventional high speed detectors are limited by the recovery time, which can be over a hundred pico seconds. High speed direct detection with picosecond response near 0.85 um has been successfully demonstrated in LT grown GaAs structures using interdigitated electrodes. These can form the key element in an optical AND GATE used for demultiplexing digital data at rates of up to 100 G bits. In this project, new materials based on LT grown InGaAs are developed and tested for their suitability at the 1.3 and 1.5 um wavelengths, where single mode fiber capable of supporting such rates operates. The results to date extend pico second range responses to around 1.06 um, but basic physical properties still preclude full extension to the desired wavelengths allowed by the range of transparency. Successful applications have resulted at the shorter wavelengths, and the results of these studies will facilitate the on-going material development needed to further extend the range of this new device technology. High speed detector, Low temperature grown InGaAs, Optical gate, AND Gate, Fiber optic switch.
Author: Publisher: ISBN: Category : Languages : en Pages : 97
Book Description
During the last year of the grant we began developing theoretical techniques for the analysis of the propagation and radiation properties of the device structures . These structures are comprised of a complanar stripline coupled to a exponential tapered stripline antenna. We initiated the development of two models. One model describes the dispersion of coplanar striplines over a wide range of dimensions and frequencies. The model is full wave analysis in the spectral domain using Galerkins method.
Author: Chi H. Lee
Author: Chi H. Lee
Author: Frederick J. Leonberger
Author: Gerard A. Mourou
Author: Gerard Mourou
Author: Steven C. Moss
Author: 
Author: David Anderson Humphreys
Author: 
Author: Chang Chen-Shiung
Author: