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Author: Andre Moliton Publisher: John Wiley & Sons ISBN: 111862324X Category : Science Languages : en Pages : 293
Book Description
Describing the fundamental physical properties of materials used in electronics, the thorough coverage of this book will facilitate an understanding of the technological processes used in the fabrication of electronic and photonic devices. The book opens with an introduction to the basic applied physics of simple electronic states and energy levels. Silicon and copper, the building blocks for many electronic devices, are used as examples. Next, more advanced theories are developed to better account for the electronic and optical behavior of ordered materials, such as diamond, and disordered materials, such as amorphous silicon. Finally, the principal quasi-particles (phonons, polarons, excitons, plasmons, and polaritons) that are fundamental to explaining phenomena such as component aging (phonons) and optical performance in terms of yield (excitons) or communication speed (polarons) are discussed.
Author: Andre Moliton Publisher: John Wiley & Sons ISBN: 111862324X Category : Science Languages : en Pages : 293
Book Description
Describing the fundamental physical properties of materials used in electronics, the thorough coverage of this book will facilitate an understanding of the technological processes used in the fabrication of electronic and photonic devices. The book opens with an introduction to the basic applied physics of simple electronic states and energy levels. Silicon and copper, the building blocks for many electronic devices, are used as examples. Next, more advanced theories are developed to better account for the electronic and optical behavior of ordered materials, such as diamond, and disordered materials, such as amorphous silicon. Finally, the principal quasi-particles (phonons, polarons, excitons, plasmons, and polaritons) that are fundamental to explaining phenomena such as component aging (phonons) and optical performance in terms of yield (excitons) or communication speed (polarons) are discussed.
Author: Rene Lalauze Publisher: John Wiley & Sons ISBN: 111862386X Category : Science Languages : en Pages : 376
Book Description
Fundamental elementary facts and theoretical tools for the interpretation and model development of solid-gas interactions are first presented in this work. Chemical, physical and electrochemical aspects are presented from a phenomenological, thermodynamic and kinetic point of view. The theoretical aspects of electrical properties on the surface of a solid are also covered to provide greater accessibility for those with a physico-chemical background. The second part is devoted to the development of devices for gas detection in a system approach. Methods for experimental investigations concerning solid-gas interactions are first described. Results are then presented in order to support the contribution made by large metallic elements to the electronic processes associated with solid-gas interactions.
Author: Francis Balestra Publisher: Springer Science & Business Media ISBN: 9401003394 Category : Technology & Engineering Languages : en Pages : 349
Book Description
A review of the electrical properties, performance and physical mechanisms of the main silicon-on-insulator (SOI) materials and devices. Particular attention is paid to the reliability of SOI structures operating in harsh conditions. The first part of the book deals with material technology and describes the SIMOX and ELTRAN technologies, the smart-cut technique, SiCOI structures and MBE growth. The second part covers reliability of devices operating under extreme conditions, with an examination of low and high temperature operation of deep submicron MOSFETs and novel SOI technologies and circuits, SOI in harsh environments and the properties of the buried oxide. The third part deals with the characterization of advanced SOI materials and devices, covering laser-recrystallized SOI layers, ultrashort SOI MOSFETs and nanostructures, gated diodes and SOI devices produced by a variety of techniques. The last part reviews future prospects for SOI structures, analyzing wafer bonding techniques, applications of oxidized porous silicon, semi-insulating silicon materials, self-organization of silicon dots and wires on SOI and some new physical phenomena.
Author: El-Saba, Muhammad Publisher: IGI Global ISBN: 1522523138 Category : Technology & Engineering Languages : en Pages : 690
Book Description
Rapid developments in technology have led to enhanced electronic systems and applications. When utilized correctly, these can have significant impacts on communication and computer systems. Transport of Information-Carriers in Semiconductors and Nanodevices is an innovative source of academic material on transport modelling in semiconductor material and nanoscale devices. Including a range of perspectives on relevant topics such as charge carriers, semiclassical transport theory, and organic semiconductors, this is an ideal publication for engineers, researchers, academics, professionals, and practitioners interested in emerging developments on transport equations that govern information carriers.
Author: Mohamed Hesham Farouk Publisher: Springer Nature ISBN: 3030398471 Category : Science Languages : en Pages : 400
Book Description
This book gathers the proceedings of the 4th conference on Recent Advances in Engineering Math. & Physics (RAEMP 2019), which took place in Cairo, Egypt in December 2019. This international and interdisciplinary conference highlights essential research and developments in the field of Engineering Mathematics and Physics and related technologies and applications. The proceedings is organized to follow the main tracks of the conference: Advanced computational techniques in engineering and sciences; computational intelligence; photonics; physical measurements and big data analytics; physics and nano-technologies; and optimization and mathematical analysis.
Author: Beniamino Murgante Publisher: Springer ISBN: 3642396437 Category : Computers Languages : en Pages : 743
Book Description
The five-volume set LNCS 7971-7975 constitutes the refereed proceedings of the 13th International Conference on Computational Science and Its Applications, ICCSA 2013, held in Ho Chi Minh City, Vietnam, in June 2013. Apart from the general track, ICCSA 2013 also include 33 special sessions and workshops, in various areas of computational sciences, ranging from computational science technologies, to specific areas of computational sciences, such as computer graphics and virtual reality. There are 46 papers from the general track, and 202 in special sessions and workshops.
Author: J.-P. Colinge Publisher: Springer Science & Business Media ISBN: 1475726112 Category : Technology & Engineering Languages : en Pages : 277
Book Description
Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition describes the different facets of SOI technology. SOI chips are now commercially available and SOI wafer manufacturers have gone public. SOI has finally made it out of the academic world and is now a big concern for every major semiconductor company. SOI technology has indeed deserved serious recognition: high-temperature (400°C), extremely rad-hard (500 Mrad(Si)), high-density (16 Mb, 0.9-volt DRAM), high-speed (several GHz) and low-voltage (0.5 V) SOI circuits have been demonstrated. Strategic choices in favor of the use of SOI for low-voltage, low-power portable systems have been made by several major semiconductor manufacturers. Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI device processing, the physics of the SOI MOSFET as well as that of SOI other devices, and the performances of SOI circuits are discussed in detail. The SOI specialist will find this book invaluable as a source of compiled references covering the different aspects of SOI technology. For the non-specialist, the book serves as an excellent introduction to the topic with detailed, yet simple and clear explanations. Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition is recommended for use as a textbook for classes on semiconductor device processing and physics. The level of the book is appropriate for teaching at both the undergraduate and graduate levels. Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition includes the new materials, devices, and circuit concepts which have been devised since the publication of the first edition. The circuit sections, in particular, have been updated to present the performances of SOI devices for low-voltage, low-power applications, as well as for high-temperature, smart-power, and DRAM applications. The other sections, such as those describing SOI materials, the physics of the SOI MOSFET and other devices have been updated to present the state of the art in SOI technology.
Author: Jean Laconte Publisher: Springer Science & Business Media ISBN: 0387288430 Category : Technology & Engineering Languages : en Pages : 293
Book Description
Co-integration of sensors with their associated electronics on a single silicon chip may provide many significant benefits regarding performance, reliability, miniaturization and process simplicity without significantly increasing the total cost. Micromachined Thin-Film Sensors for SOI-CMOS Co-integration covers the challenges and interests and demonstrates the successful co-integration of gas-flow sensors on dielectric membrane, with their associated electronics, in CMOS-SOI technology. We firstly investigate the extraction of residual stress in thin layers and in their stacking and the release, in post-processing, of a 1 μm-thick robust and flat dielectric multilayered membrane using Tetramethyl Ammonium Hydroxide (TMAH) silicon micromachining solution. The optimization of its selectivity towards aluminum is largely demonstrated. The second part focuses on sensors design and characteristics. A novel loop-shape polysilicon microheater is designed and built in a CMOS-SOI standard process. High thermal uniformity, low power consumption and high working temperature are confirmed by extensive measurements. The additional gas flow sensing layers are judiciously chosen and implemented. Measurements in the presence of a nitrogen flow and gas reveal fair sensitivity on a large flow velocity range as well as good response to many gases. Finally, MOS transistors suspended on released dielectric membranes are presented and fully characterized as a concluding demonstrator of the co-integration in SOI technology.
Author: Andre Moliton
Author: Andre Moliton
Author: Rene Lalauze
Author: Francis Balestra
Author: El-Saba, Muhammad
Author: Mohamed Hesham Farouk
Author: Beniamino Murgante
Author: J.-P. Colinge
Author: Мирослав Драмићанин
Author: 
Author: Jean Laconte