Physics Of Semiconductors, The - Proceedings Of The 22nd International Conference (In 3 Volumes) PDF Download
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Author: David J Lockwood Publisher: World Scientific ISBN: 9814550159 Category : Languages : en Pages : 2858
Book Description
These proceedings review the progress in most aspects of semiconductor physics, including those related to materials, processing and devices. The conference continues the tradition of the ICPS series and these volumes include state-of-the-art lectures. The plenary and invited papers address areas of major interest.These volumes will serve as excellent material for researchers in semiconductor physics and related fields.
Author: David J Lockwood Publisher: World Scientific ISBN: 9814550159 Category : Languages : en Pages : 2858
Book Description
These proceedings review the progress in most aspects of semiconductor physics, including those related to materials, processing and devices. The conference continues the tradition of the ICPS series and these volumes include state-of-the-art lectures. The plenary and invited papers address areas of major interest.These volumes will serve as excellent material for researchers in semiconductor physics and related fields.
Author: S. Ashok Publisher: ISBN: Category : Technology & Engineering Languages : en Pages : 522
Book Description
This book focuses on the deliberate introduction and manipulation of defects and impurities in order to engineer desired properties in semiconductor materials and devices. In view of current exciting developments in wide-bandgap semiconductors like GaN for blue light emission, as well as high-speed and high-temperature electronics, dopant and defect issues relevant to these materials are addressed. Also featured are semiconductor nanocavities and nano-structures, with emphasis on the formation and impact of vacancy-type defects. Defect reaction problems pertaining to impurity gettering, precipitation and hydrogen passivation are specific examples of defect engineering that improve the electronic quality of the material. A number of papers also deal with characterization techniques needed to study and to identify defects in materials and device structures. Finally, papers also address issues such as interface control and passivation, application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels, and device applications.
Author: United States. Energy Research and Development Administration. Technical Information Center Publisher: ISBN: Category : Force and energy Languages : en Pages : 724
Author: ConferenceSeries Publisher: ConferenceSeries ISBN: Category : Science Languages : en Pages : 114
Book Description
September 17-18, 2018 Berlin, Germany Key Topics : Graphene Modification and Functionalization, Graphene Synthesis, Applications of Carbon in Energy, Graphene and 2D Materials based Nanocomposites, Emerging Trends in the field of Graphene Nano, Carbon nanotubes and graphene, Semiconductor Materials and Nanostructures, Graphene-like 2D materials, Graphene nano In Energy and Storage, Carbon nano chips and nanostructures,
Author: David J Lockwood
Author: David J Lockwood
Author: 
Author: 
Author: S. Ashok
Author: United States. Energy Research and Development Administration
Author: United States. Energy Research and Development Administration
Author: United States. Energy Research and Development Administration. Technical Information Center
Author: 
Author: ConferenceSeries
Author: