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Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
SiGe/Si - MODFETs have obtained encouraging results with maximum oscillation frequencies for p- and n-channel devices around 100 GHz. The SiGe/Si system is the only one with nearly symmetrical transport properties of holes and electrons. Future development of silicon based ultra high frequency devices will be strongly influenced by integration demands, quality of MOS gates on heterostructures, strained layer engineering and band ordering. Devices which exploit tunnelling, coherent transport and transit time effects will gain importance. Room temperature tunnelling via SiGe quantum wells and quantum dots is proposed and partly tested. Resonance phase operation may allow oscillators with defined frequencies above the conventional frequency limits.
Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
SiGe/Si - MODFETs have obtained encouraging results with maximum oscillation frequencies for p- and n-channel devices around 100 GHz. The SiGe/Si system is the only one with nearly symmetrical transport properties of holes and electrons. Future development of silicon based ultra high frequency devices will be strongly influenced by integration demands, quality of MOS gates on heterostructures, strained layer engineering and band ordering. Devices which exploit tunnelling, coherent transport and transit time effects will gain importance. Room temperature tunnelling via SiGe quantum wells and quantum dots is proposed and partly tested. Resonance phase operation may allow oscillators with defined frequencies above the conventional frequency limits.
Author: Juras Pozela Publisher: Springer Science & Business Media ISBN: 1489912428 Category : Science Languages : en Pages : 351
Book Description
This book examines the physical principles behind the operation of high-speed transistors operating at frequencies above 10 GHz and having switching times less than 100 psec. If the 1970s cannot be remembered for the opportunities for creating and extensively using transistors operating at such high speeds, then, the situation has changed radically because of rapid progress in sub micrometer technology for manufacturing transistors and integrated circuits from GaAs and other semiconductor materials and the powerful influx of new physical concepts. Not only have transistors having switching speeds of 50-100 psec operating in the 10-20 GHz region been created in recent years, but the possibilities for manufacturing transistors operating one to two orders of magnitude faster have been revealed. As superhigh-speed transistors have been created, many of the most important areas of technology such as communications, computing technology, television, radar, and the manufacture of scientific, industrial, and medical equipment have qualitatively changed. Microwave transistors operating at millimeter wavelengths make it possible to produce compact and highly efficient equipment for communications and radar technology. Transistors with switching speeds better than 10-100 psec make it possible to increase the speed of microprocessors and other computer components to tens of billions of operations per second and thereby solve one of the most pressing problems of modern electronics - increasing the speed of digital information processing.
Author: I︠U︡ras Karlovich Pozhela Publisher: Springer ISBN: Category : Science Languages : en Pages : 360
Book Description
This book examines in detail the new physical principles and technological approaches that make high-speed transistors possible. It includes discussions of maximum drift velocity in semiconductors, hot-electron transistors, and high-speed devices and integrated circuits to provide a comprehensive overview for physicists, engineers, and students who wish to apply this technology to computer and microwave development.
Author: John D. Cressler Publisher: CRC Press ISBN: 1420026585 Category : Technology & Engineering Languages : en Pages : 1248
Book Description
An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.
Author: Michio Kaku Publisher: Anchor ISBN: 0385530811 Category : Science Languages : en Pages : 456
Book Description
NATIONAL BESTSELLER • The renowned theoretical physicist and national bestselling author of The God Equation details the developments in computer technology, artificial intelligence, medicine, space travel, and more, that are poised to happen over the next century. “Mind-bending…. [An] alternately fascinating and frightening book.” —San Francisco Chronicle Space elevators. Internet-enabled contact lenses. Cars that fly by floating on magnetic fields. This is the stuff of science fiction—it’s also daily life in the year 2100. Renowned theoretical physicist Michio Kaku considers how these inventions will affect the world economy, addressing the key questions: Who will have jobs? Which nations will prosper? Kaku interviews three hundred of the world’s top scientists—working in their labs on astonishing prototypes. He also takes into account the rigorous scientific principles that regulate how quickly, how safely, and how far technologies can advance. In Physics of the Future, Kaku forecasts a century of earthshaking advances in technology that could make even the last centuries’ leaps and bounds seem insignificant.
Author: Michael Reisch Publisher: Springer Science & Business Media ISBN: 9783540677024 Category : Medical Languages : en Pages : 686
Book Description
This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.
Author: D. Nirmal Publisher: CRC Press ISBN: 1000475344 Category : Technology & Engineering Languages : en Pages : 302
Book Description
This book covers the fundamentals and significance of 2-D materials and related semiconductor transistor technologies for the next-generation ultra low power applications. It provides comprehensive coverage on advanced low power transistors such as NCFETs, FinFETs, TFETs, and flexible transistors for future ultra low power applications owing to their better subthreshold swing and scalability. In addition, the text examines the use of field-effect transistors for biosensing applications and covers design considerations and compact modeling of advanced low power transistors such as NCFETs, FinFETs, and TFETs. TCAD simulation examples are also provided. FEATURES Discusses the latest updates in the field of ultra low power semiconductor transistors Provides both experimental and analytical solutions for TFETs and NCFETs Presents synthesis and fabrication processes for FinFETs Reviews details on 2-D materials and 2-D transistors Explores the application of FETs for biosensing in the healthcare field This book is aimed at researchers, professionals, and graduate students in electrical engineering, electronics and communication engineering, electron devices, nanoelectronics and nanotechnology, microelectronics, and solid-state circuits.
Author: 
Author: 
Author: Juras Pozela
Author: 
Author: I︠U︡ras Karlovich Pozhela
Author: John D. Cressler
Author: Michio Kaku
Author: 
Author: Juras Pozela
Author: Michael Reisch
Author: D. Nirmal