Physics-based Analytical Model for Silicon Carbide MESFET with a New Concept of Charge Conserving Capacitance PDF Download

Author: Kiran Kumar Rambappagari
Publisher:
ISBN:
Category : Metal semiconductor field-effect transistors
Languages : en
Pages : 48

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Book Description
In this project, a physics-based analytical model for silicon carbide (SiC) metal semiconductor field effect transistors (MESFETs) has been developed and presented. The gate capacitances such as gate-source capacitance and gate-drain capacitance were determined by considering various terminal charges with respect to the voltages at source, drain, and gate. The gate capacitance has been determined for linear and non-linear regions. This study is extremely valuable for SiC MESFETs to find their cut-off and maximum frequencies from the gate capacitance model. The gate-source and gate-drain capacitances show extremely attractive values, justifying the use of SiC MESFET as a high frequency device.

Author: Bodhisattwa Samanta
Publisher:
ISBN:
Category : Diodes, Schottky-barrier
Languages : en
Pages : 38

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In this paper, the author presents a physics based analytical modeling and simulation of ion implanted silicon carbide Schottky gate FET. The model has been developed to compute the drain-source current, intrinsic parameters such as, gate capacitances, drain-source resistance and transconductance taking into account of different fabrication parameters such as doping concentration of active channel, doping constant, mobility, the correlation between active channel depth and pinch off voltage and other physical parameters. The physics based analytical model for a non self-aligned SiC MESFET shows different intrinsic and extrinsic parameters reflecting the microwave frequency applications.

Author: Rishitej Reddy Byravarapu
Publisher:
ISBN:
Category :
Languages : en
Pages : 66

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Book Description
An analytical model of silicon carbide based MESFET has been developed to evaluate the frequency response from an intensive study of the I-V characteristics and intrinsic parameters. The I-V characteristics have been determined by the channel charge in the linear and non-linear regimes. The transconductance has been computed in the saturation region to determine its properties contributing to the cut-off frequency response. The gate-source capacitance and gate-drain capacitance under saturation condition have been calculated in the frame of this model. The cut off frequency has been evaluated by using the transconductance and gate capacitance and the anticipated cut-off frequency is expected to obtain in the order of GHz range due the properties of wide bandgap semiconductor.

Author: Srikanth Movva
Publisher:
ISBN:
Category :
Languages : en
Pages : 53

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Book Description
This project involves in determining the frequency response considering the effect of transconductance and gate capacitance by developing an analytical model of Silicon Carbide (SiC) MESFETs device. The dispersion characteristics are observed to be dependent on bulk traps effects. I-V characteristics of SiC MESFET have been evaluated to determine the power-aided efficiency and switching performance from the linearity and linearity behaviors of drain current. The significant change of drain current, transconductance and gate-source capacitance have been observed due to the bulk traps effects on charge carrier reflecting GHz frequency performance of SiC MESFET device. The results of device performance simulated by MatLab tool have been described chronologically in the result and discussion chapter.

Author: Yan N. Linn
Publisher:
ISBN:
Category : Ion implantation
Languages : en
Pages : 74

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Book Description
The ion implantation based analytical model of submicron Silicon Carbide transistor is developed to report large signal model (I-V characteristic) and small signal model (gate source capacitance and gate drain capacitance along with unity gain frequency) with respect to different gate to source voltages and drain to source voltages. The threshold voltage variation with respect to the ion doses is also studied. To minimize the lattice damages during ion implantation process, the shallow channel doping model is proposed. The fitting of compact MESFET structure using Curtice model in advanced design system (ADS) is utilized to create the spice model of transistor for RF and Microwave Power Amplifier circuits' simulator. The maximum available unity gain frequency for the modeled device (gate length: 0.8um with shallow channel) is 67GHz, and the maximum oscillating frequency is 81GHz. The maximum (unmatched) available gain is 14.4dB, 8.7dB, and 3.9dB at 2.4GHz (UHF), 10GHz (SHF), and 52GHz (EHF) respectively. The minimum noise figure of the proposed model is also discussed in this project report.

Author: Sushma Malku
Publisher:
ISBN:
Category :
Languages : en
Pages : 42

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Book Description
The main goal of this grad thesis is to develop an analytical model for n-channel MESFET device and understanding the device parameters incorporating the back-gate biasing effect. The device has been structured by n-channel using front and back doping processes. The physics based analytical model of SiC MESFET gave the clear picture of electrostatic potential distribution at any position of channel. The electric field distribution underneath the gate under drain source biasing shows an important properties of electric field distribution. The threshold voltage variations with back gate biasing for different substrate concentration and ion dose have been discussed to study the device properties for switching and frequency performance. The grad thesis incorporate the introduction of the thesis in chapter 1, silicon carbide material in chapter 2, MESFET physics in chapter 3, numerical calculations in chapter 4 and results and discussion in chapter 5.

Author: Chirayu Shah
Publisher:
ISBN:
Category :
Languages : en
Pages : 64

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Book Description
4H-Silicon Carbide metal semiconductor effect transistor has a massive possible popular high-power device at microwave frequencies because of their extensive band-gap structures of high electrical breakdown field strength, high electron saturation velocity and high operational temperature. A physics-based analytical model of Silicon Carbide based MESFETs has been developed considering high-purity semi-insulating substrates to find the interaction of traps influence between the channel and substrates. I-V characteristics with the influence of traps and without traps, I-V characteristics with field dependent mobility and the transconductance with traps and without traps have been evaluated to understand the power aided efficiency and frequency performance.

Author: Sitarama Raju Gottumukkala
Publisher:
ISBN:
Category : Metal semiconductor field-effect transistors
Languages : en
Pages : 41

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Book Description
This project presents a development of variance capacitance model for a silicon carbide metal semiconductor field effect transistor (MESFET), three-terminal varactor, applied to a monolithic microwave integrated circuit (MMIC), voltage-controlled oscillator. In this model, because the source is connected with the drain, the gate capacitance is only considered by analytical expressions, which are classified into three different regions for gate bias voltage: a before pinch-off region, an after-pinch-off region, and a transition region. The model includes consideration for free carrier movement in the active region, which is a critical contributor to the gate capacitance.

Author: Ravi Teja Reddy Garugu
Publisher:
ISBN:
Category :
Languages : en
Pages : 50

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Book Description
A physics based analytical modeling of SiC MESFET has been presented in this grad thesis to evaluate I-V characteristics, and transconductance under traps effects. The impact of grad thesis is to show the traps effects on different electrical parameter because the SiC material is still having adequate defects during growth, which promotes the trap center to degrade the device performance. The traps centers have been considered with different electronic capture cross-section in traps energy level. The drain currents for various gate-source voltage shows significant effect due traps effects, However, I-V characteristics shows a sharp view of linear and non-linear behavior of drain current, which shows no significant effects on switching properties due to the influence of trap centers. Similarly, the transconductance shows significant effect due to traps. The transconductance has been determined for different active channel thickness to study the device performance for power aided efficiency.

Author: Sankha S. Mukherjee
Publisher:
ISBN:
Category : Metal semiconductor field-effect transistors
Languages : en
Pages : 206

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Book Description
"A physics-based analytical model of the SiC MESFET incorporating trapping and thermal effects is reported. The model takes into account the field and temperature dependencies of carrier transport parameters and carrier trapping effects. Both surface and substrate traps have been incorporated in the model to calculate the observed current slump in the I-V characteristics. The trapping and detrapping from surface traps control the channel opening at the drain end of the channel that requires the drain resistance to be gate and drain voltage dependent. The substrate traps capture channel electrons at high drain bias when the buffer layer is fully depleted resulting in current collapse at low drain bias in the following I-V trace. The detrapping of the captured electrons is initiated with the increasing drain bias and the channel electron concentration increases which is accelerated by increased thermal effects. As a result, restoration of collapsed drain current is obtained before the trapping effect is reinitiated at high drain bias. The calculated results using the current model are in good agreement with experimental data. A small-signal model for the MESFET has also been proposed. Calculations for the output conductance, the transconductance, the gate-source and gate-drain capacitance has also been presented"--Abstract.