Physics and Simulation of High-speed Heterostructure Devices PDF Download

Author: Isik Cem F. Kizilyalli
Publisher:
ISBN:
Category :
Languages : en
Pages : 258

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Author: Patrick Roblin
Publisher: Cambridge University Press
ISBN: 1139437461
Category : Technology & Engineering
Languages : en
Pages : 726

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Book Description
Fuelled by rapid growth in communications technology, silicon heterostructures and related high-speed semiconductors are spearheading the drive toward smaller, faster and lower power devices. High-Speed Heterostructure Devices is a textbook on modern high-speed semiconductor devices intended for both graduate students and practising engineers. This book is concerned with the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. Emphasis is placed on heterostructure devices of the immediate future such as the MODFET, HBT and RTD. The principles of operation of other devices such as the Bloch Oscillator, RITD, Gunn diode, quantum cascade laser and SOI and LD MOSFETs are also introduced. Initially developed for a graduate course taught at Ohio State University, the book comes with a complete set of homework problems and a web link to MATLAB programs supporting the lecture material.

Author: John D. Cressler
Publisher: CRC Press
ISBN: 1420066935
Category : Technology & Engineering
Languages : en
Pages : 200

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Book Description
When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.

Author: Vassil Palankovski
Publisher:
ISBN: 9783709105610
Category :
Languages : en
Pages : 324

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Book Description
Semiconductor heterostructure devices, such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transistors (HEMTs), are among the fastest and most advanced high-frequency devices. The topic of this book is the physical modeling of modern submicron heterostructure devices. In particular, a detailed discussion of models and parameters for compound semiconductors is presented. Based on the comprehensive modeling more than 25 simulation examples for several different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based HEMTs and HBTs are shown in comparison with experimental data from state-of-the-art devices. Device-specific optimization potentials are discussed systematically. This book is of interest for device and circuit designers in semiconductor development and industry. It is strongly recommended for advanced undergraduate and graduate students, for researchers in the field of electrical engineering and solid-state physics, for TCAD users and developers, and for researchers who are looking for practical application of their scientific work.

Author:
Publisher: Academic Press
ISBN: 0080864384
Category : Technology & Engineering
Languages : en
Pages : 481

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Book Description
Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature. The first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed Offers a complete, three-chapter review of resonant tunneling Provides an emphasis on circuits as well as devices

Author: Vassil Palankovski
Publisher: Springer Science & Business Media
ISBN: 3709105609
Category : Technology & Engineering
Languages : en
Pages : 309

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Book Description
The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.

Author: John D. Cressler
Publisher: CRC Press
ISBN: 1420066919
Category : Technology & Engineering
Languages : en
Pages : 472

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Book Description
SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.

Author: Jagdeep Shah
Publisher: Elsevier
ISBN: 0080925707
Category : Science
Languages : en
Pages : 525

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Book Description
Nonequilibrium hot charge carriers play a crucial role in the physics and technology of semiconductor nanostructure devices. This book, one of the first on the topic, discusses fundamental aspects of hot carriers in quasi-two-dimensional systems and the impact of these carriers on semiconductor devices. The work will provide scientists and device engineers with an authoritative review of the most exciting recent developments in this rapidly moving field. It should be read by all those who wish to learn the fundamentals of contemporary ultra-small, ultra-fast semiconductor devices. Topics covered include Reduced dimensionality and quantum wells Carrier-phonon interactions and hot phonons Femtosecond optical studies of hot carrier Ballistic transport Submicron and resonant tunneling devices

Author: K. N. Bhat
Publisher: Alpha Science Int'l Ltd.
ISBN: 9788173195679
Category : Science
Languages : en
Pages : 1310

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Book Description
Contributed papers of the workshop held at IIT, Madras, in 2003.

Author: Institution of Electrical Engineers
Publisher: IET
ISBN: 9780863412042
Category : Science
Languages : en
Pages : 330

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Book Description
This book brings together developments in both the physics and engineering of semiconductor devices. Much attention is paid to so-called 'band gap engineering' which is enabling new and higher performance devices to be researched and introduced.