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Author: Zhichao Lu Publisher: ISBN: Category : Languages : en Pages :
Book Description
ABSTRACT: This dissertation addresses physical analysis and design issues of nanoscale floatingbody cells (FBC), which are also known as capacitorless dynamic random-access memory (DRAM) cells. A novel two-transistor floating-body/gate cell (FBGC), and upgraded versions of it, are proposed and experimentally demonstrated. As the conventional one-transistor and one-capacitor (1T/1C) DRAM technology is aggressively scaled, novel device structures and materials have to be introduced to meet International Technology Roadmap for Semiconductors (ITRS) performance requirements. Novel device structures and materials bring a lot of processing and integration challenges to current complementary metal-oxide-semiconductor (CMOS) technology. To avoid these challenges, capacitorless DRAM, which is based on silicon-on-insulator (SOI) CMOS including partially depleted (PD) and fully depleted (FD) MOS transistors (MOSFETs), is attracting a lot of interest. This technology, which uses the floating body of the SOI MOSFET as the storage element, can potentially replace the conventional 1T/1C DRAM cell in the near future. The basic working principle of the FBC is to utilize the floating-body effect inherent in the PD/SOI MOSFET; the FD/SOI MOSFET also shows the floating-body effect when the substrate, or back gate is biased for accumulation. However, the physical explanation of the floating-body effect in the FD/SOI device is not clear. Based on 14 numerical simulations, physical insights are gained on the effect and on FBC performance, e.g., the sense margin.
Author: Zhichao Lu Publisher: ISBN: Category : Languages : en Pages :
Book Description
ABSTRACT: This dissertation addresses physical analysis and design issues of nanoscale floatingbody cells (FBC), which are also known as capacitorless dynamic random-access memory (DRAM) cells. A novel two-transistor floating-body/gate cell (FBGC), and upgraded versions of it, are proposed and experimentally demonstrated. As the conventional one-transistor and one-capacitor (1T/1C) DRAM technology is aggressively scaled, novel device structures and materials have to be introduced to meet International Technology Roadmap for Semiconductors (ITRS) performance requirements. Novel device structures and materials bring a lot of processing and integration challenges to current complementary metal-oxide-semiconductor (CMOS) technology. To avoid these challenges, capacitorless DRAM, which is based on silicon-on-insulator (SOI) CMOS including partially depleted (PD) and fully depleted (FD) MOS transistors (MOSFETs), is attracting a lot of interest. This technology, which uses the floating body of the SOI MOSFET as the storage element, can potentially replace the conventional 1T/1C DRAM cell in the near future. The basic working principle of the FBC is to utilize the floating-body effect inherent in the PD/SOI MOSFET; the FD/SOI MOSFET also shows the floating-body effect when the substrate, or back gate is biased for accumulation. However, the physical explanation of the floating-body effect in the FD/SOI device is not clear. Based on 14 numerical simulations, physical insights are gained on the effect and on FBC performance, e.g., the sense margin.
Author: Jerry G. Fossum Publisher: Cambridge University Press ISBN: 1107434491 Category : Technology & Engineering Languages : en Pages : 227
Book Description
Understand the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. • Describes FD/SOI MOSFETs and 3-D FinFETs in detail • Covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM • Provides design criteria for nanoscale FinFET and nanoscale thin- and thick-BOX planar FD/SOI MOSFET to help reduce technology development time • Projects potential nanoscale UTB CMOS performances • Contains end-of-chapter exercises. For professional engineers in the CMOS IC field who need to know about optimal non-classical device design and integration, this is a must-have resource.
Author: Baker Mohammad Publisher: Springer Science & Business Media ISBN: 1461488818 Category : Technology & Engineering Languages : en Pages : 104
Book Description
This book describes the various tradeoffs systems designers face when designing embedded memory. Readers designing multi-core systems and systems on chip will benefit from the discussion of different topics from memory architecture, array organization, circuit design techniques and design for test. The presentation enables a multi-disciplinary approach to chip design, which bridges the gap between the architecture level and circuit level, in order to address yield, reliability and power-related issues for embedded memory.
Author: R. Jacob Baker Publisher: John Wiley & Sons ISBN: 0470229411 Category : Technology & Engineering Languages : en Pages : 1074
Book Description
This edition provides an important contemporary view of a wide range of analog/digital circuit blocks, the BSIM model, data converter architectures, and more. The authors develop design techniques for both long- and short-channel CMOS technologies and then compare the two.
Author: Phillip A. Laplante Publisher: Wiley-IEEE Press ISBN: Category : Computers Languages : en Pages : 392
Book Description
"IEEE Press is pleased to bring you this Second Edition of Phillip A. Laplante's best-selling and widely-acclaimed practical guide to building real-time systems. This book is essential for improved system designs, faster computation, better insights, and ultimate cost savings. Unlike any other book in the field, REAL-TIME SYSTEMS DESIGN AND ANALYSIS provides a holistic, systems-based approach that is devised to help engineers write problem-solving software. Laplante's no-nonsense guide to real-time system design features practical coverage of: Related technologies and their histories Time-saving tips * Hands-on instructions Pascal code Insights into decreasing ramp-up times and more!"
Author: Peter Marwedel Publisher: Springer Science & Business Media ISBN: 9400702574 Category : Technology & Engineering Languages : en Pages : 400
Book Description
Until the late 1980s, information processing was associated with large mainframe computers and huge tape drives. During the 1990s, this trend shifted toward information processing with personal computers, or PCs. The trend toward miniaturization continues and in the future the majority of information processing systems will be small mobile computers, many of which will be embedded into larger products and interfaced to the physical environment. Hence, these kinds of systems are called embedded systems. Embedded systems together with their physical environment are called cyber-physical systems. Examples include systems such as transportation and fabrication equipment. It is expected that the total market volume of embedded systems will be significantly larger than that of traditional information processing systems such as PCs and mainframes. Embedded systems share a number of common characteristics. For example, they must be dependable, efficient, meet real-time constraints and require customized user interfaces (instead of generic keyboard and mouse interfaces). Therefore, it makes sense to consider common principles of embedded system design. Embedded System Design starts with an introduction into the area and a survey of specification models and languages for embedded and cyber-physical systems. It provides a brief overview of hardware devices used for such systems and presents the essentials of system software for embedded systems, like real-time operating systems. The book also discusses evaluation and validation techniques for embedded systems. Furthermore, the book presents an overview of techniques for mapping applications to execution platforms. Due to the importance of resource efficiency, the book also contains a selected set of optimization techniques for embedded systems, including special compilation techniques. The book closes with a brief survey on testing. Embedded System Design can be used as a text book for courses on embedded systems and as a source which provides pointers to relevant material in the area for PhD students and teachers. It assumes a basic knowledge of information processing hardware and software. Courseware related to this book is available at http://ls12-www.cs.tu-dortmund.de/~marwedel.
Author: Hideto Hidaka Publisher: Springer ISBN: 3319553062 Category : Technology & Engineering Languages : en Pages : 253
Book Description
This book provides a comprehensive introduction to embedded flash memory, describing the history, current status, and future projections for technology, circuits, and systems applications. The authors describe current main-stream embedded flash technologies from floating-gate 1Tr, floating-gate with split-gate (1.5Tr), and 1Tr/1.5Tr SONOS flash technologies and their successful creation of various applications. Comparisons of these embedded flash technologies and future projections are also provided. The authors demonstrate a variety of embedded applications for auto-motive, smart-IC cards, and low-power, representing the leading-edge technology developments for eFlash. The discussion also includes insights into future prospects of application-driven non-volatile memory technology in the era of smart advanced automotive system, such as ADAS (Advanced Driver Assistance System) and IoE (Internet of Everything). Trials on technology convergence and future prospects of embedded non-volatile memory in the new memory hierarchy are also described. Introduces the history of embedded flash memory technology for micro-controller products and how embedded flash innovations developed; Includes comprehensive and detailed descriptions of current main-stream embedded flash memory technologies, sub-system designs and applications; Explains why embedded flash memory requirements are different from those of stand-alone flash memory and how to achieve specific goals with technology development and circuit designs; Describes a mature and stable floating-gate 1Tr cell technology imported from stand-alone flash memory products - that then introduces embedded-specific split-gate memory cell technologies based on floating-gate storage structure and charge-trapping SONOS technology and their eFlash sub-system designs; Describes automotive and smart-IC card applications requirements and achievements in advanced eFlash beyond 4 0nm node.
Author: Richard W. Siegel Publisher: Springer Science & Business Media ISBN: 9780792358541 Category : Technology & Engineering Languages : en Pages : 378
Book Description
Timely information on scientific and engineering developments occurring in laboratories around the world provides critical input to maintaining the economic and technological strength of the United States. Moreover, sharing this information quickly with other countries can greatly enhance the productivity of scientists and engineers. These are some of the reasons why the National Science Foundation (NSF) has been involved in funding science and technology assessments comparing the United States and foreign countries since the early 1980s. A substantial number of these studies have been conducted by the World Technology Evaluation Center (WTEC) managed by Loyola College through a cooperative agreement with NSF. The National Science and Technology Council (NSTC), Committee on Technology's Interagency Working Group on NanoScience, Engineering and Technology (CT/IWGN) worked with WTEC to develop the scope of this Nanostucture Science and Technology report in an effort to develop a baseline of understanding for how to strategically make Federal nanoscale R&D investments in the coming years. The purpose of the NSTC/WTEC activity is to assess R&D efforts in other countries in specific areas of technology, to compare these efforts and their results to U. S. research in the same areas, and to identify opportunities for international collaboration in precompetitive research. Many U. S. organizations support substantial data gathering and analysis efforts focusing on nations such as Japan. But often the results of these studies are not widely available. At the same time, government and privately sponsored studies that are in the public domain tend to be "input" studies.
Author: Cheol Seong Hwang Publisher: Springer Science & Business Media ISBN: 146148054X Category : Science Languages : en Pages : 266
Book Description
Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Author: Paul W. Smith Publisher: John Wiley & Sons ISBN: 0470852585 Category : Science Languages : en Pages : 288
Book Description
Passive Pulse Generators are circuits used to generate very high power electrical pulses. Such pulses find application in a wide range of disciplines, including plasma generation, gas laser physics and radar. * Includes two introductory chapters on techniques used to analyse passive pulse generators * Includes worked examples A valuable reference resource for specialist undergraduates, post graduate students and researchers active in the field og pulsed power and areas where pulsed power is applied, including physicists, engineers and those with an interest in waste and materials processing.
Author: Zhichao Lu
Author: Zhichao Lu
Author: Jerry G. Fossum
Author: Baker Mohammad
Author: R. Jacob Baker
Author: Phillip A. Laplante
Author: Peter Marwedel
Author: Hideto Hidaka
Author: Richard W. Siegel
Author: Cheol Seong Hwang
Author: Paul W. Smith