Author: Linda Jean BluePublisher:
ISBN:
Category : Quantum wells
Languages : en
Pages : 282
Book Description
Photoluminescence and Tunneling in GaAs/AlxGa1-xAs Single Quantum Wells
Author: Linda Jean BluePublisher:
ISBN:
Category : Quantum wells
Languages : en
Pages : 282
Book Description
Dynamics of Excitons in GaAs-AlxGa1-xAs Multiple Quantum Wells Probed by Time-resolved Photoluminescence
Author: Er-Xuan PingQuantum Well and Superlattice Physics II
Author: Federico CapassoPublisher:
ISBN:
Category : Mathematics
Languages : en
Pages : 256
Book Description
Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA
Author: Gerald B. StringfellowPublisher: CRC Press
ISBN: 100011225X
Category : Science
Languages : en
Pages : 680
Book Description
Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.
Quantum Well and Superlattice Physics
Author: Resonant Tunneling in Semiconductors
Author: L.L. ChangPublisher: Springer Science & Business Media
ISBN: 1461538467
Category : Science
Languages : en
Pages : 526
Book Description
This book contains the proceedings of the NATO Advanced Research Workshop on "Resonant Tunneling in Semiconductors: Physics and Applications", held at Escorial, Spain, on May 14-18, 1990. The tremendous growth in the past two decades in the field of resonant tunneling in semiconductor heterostructures has followed, if not outpaced, the expansion wit nessed in quantum structures in general. Resonant tunneling shares also the multi disciplinary nature of that broad area, with an emphasis on the underlying physics but with a coverage of material systems on the one end and device applications on the other. Indeed, that resonant tunneling provides great flexibility in terms of materials and configurations and that it is inherently a fast process with obvious device impli cations by the presence of a negative differential resistance have contributed to the unrelenting interest in this field. These proceedings consist of 49 refereed articles; they correspond to both invited and contributed talks at the workshop. Because of the intertwinning nature of the subject matter, it has been difficult to subdivide them in well-defined sections. Instead, they are arranged in several broad categories, meant to serve only as guidelines of emphasis on different topics and aspects. The book starts with an introduction to res onant tunneling by providing a perspective of the field in the first article. This is fol lowed by discussions of different material systems with various band-structure effects.
Photoluminescence of GaAs/Ga07̣Al03̣As Quantum Wells
Author: Kenneth Matthew EdmondsonPublisher:
ISBN:
Category :
Languages : en
Pages : 244
Book Description
Chemical Abstracts
Author: Spatially Indirect Excitons in Coupled Quantum Wells
Author: Chih-Wei Eddy LaiHot Carriers in Semiconductors
Author: Karl HessPublisher: Springer Science & Business Media
ISBN: 1461304016
Category : Science
Languages : en
Pages : 575
Book Description
This volume contains invited and contributed papers of the Ninth International Conference on Hot Carriers in Semiconductors (HCIS-9), held July 3 I-August 4, 1995 in Chicago, Illinois. In all, the conference featured 15 invited oral presentations, 60 contributed oral presentations, and 105 poster presentations, and an international contingent of 170 scientists. As in recent conferences, the main themes of the conference were related to nonlinear transport in semiconductor heterojunctions and included Bloch oscillations, laser diode structures, and femtosecond spectroscopy. Interesting questions related to nonlinear transport, size quantization, and intersubband scattering were addressed that are relevant to the new quantum cascade laser. Many lectures were geared toward quantum wires and dots and toward nanostructures and mesoscopic systems in general. It is expected that such research will open new horizons to nonlinear transport studies. An attempt was made by the program committee to increase the number of presen tations related directly to devices. The richness of nonlocal hot electron effects that were discussed as a result, in our opinion, suggests that future conferences should further encourage reports on such device research. On behalf of the Program and International Advisory Committees, we thank the participants, who made the conference a successful and pleasant experience, and the support of the Army Research Office, the Office of Naval Research, and the Beckman Institute of the University of Illinois at Urbana-Champaign. We are also indebted to Mrs. Sara Starkey and Mrs.