Scientific and Technical Aerospace Reports PDF Download

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ISBN:
Category : Aeronautics
Languages : en
Pages : 836

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Author: Daniel J. Ehrlich
Publisher: Elsevier
ISBN: 0080918026
Category : Technology & Engineering
Languages : en
Pages : 602

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This book reviews the solid core of fundamental scientific knowledge on laser-stimulated surface chemistry that has accumulated over the past few years. It provides a useful overview for the student and interested non-expert as well as essential reference data (photodissociation cross sections, thermochemical constants, etc.) for the active researcher.

Author: Takashi Hariu
Publisher: World Scientific
ISBN: 9789971508395
Category : Technology & Engineering
Languages : en
Pages : 356

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Book Description
Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole.

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Category :
Languages : en
Pages : 58

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Photo-assisted metalorganic molecular beam epitaxy (MOMBE), with an argon ion laser, has been used to grow GaAs. The substrate temperature was calibrated by an infrared laser interferometric technique with an accuracy of + or - 3 deg C. The MOMBE growth of GaAs, InAs, and InGaAs was first studied, by monitoring intensity oscillations of reflection high-energy electron diffraction (RHEED). The actual arsenic incorporation rate was deduced from As-induced RHEED oscillations, and a unity V/III incorporation ratio could be obtained. In growing InGaAs, indium segregation suppresses the InGaAs growth rate. In laser- assisted MOMBE the enhancement of arsenic desorption with laser irradiation and its effects were observed. The decomposition of triethylgallium and desorption of arsenic compete with each other, resulting in a saturation in the enhanced growth rate in the arsenic-controlled growth regime. The initial growth behavior was also studied by inspecting the details of the RHEED behavior and arsenic surface coverage ... Molecular beam epitaxy, Photo-assisted, Metal-organics gallium arsenide, Indium arsenide, Argon ion laser.

Author: E. Fogarassy
Publisher: Elsevier
ISBN: 0444596682
Category : Science
Languages : en
Pages : 495

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The papers in this volume cover all aspects of laser assisted surface processing ranging from the preparation of high-Tc superconducting layer structures to industrial laser applications for device fabrication. The topics presented give recent results in organometallic chemistry and laser photochemistry, and novel surface characterization techniques. The ability to control the surface morphology by digital deposition and etching shows one of the future directions for exciting applications of laser surface processing, some of which may apply UV and VUV excitation. The understanding of elementary proceses is essential for the design of novel deposition methods, with diamond CVD being an outstanding example. The high quality of these contributions once again demonstrates that the E-MRS is an efficient forum for interaction between research workers and industry.

Author: John E. Ayers
Publisher: CRC Press
ISBN: 1482254360
Category : Technology & Engineering
Languages : en
Pages : 660

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In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.

Author: Anthony C. Jones
Publisher: John Wiley & Sons
ISBN: 3527614621
Category : Science
Languages : en
Pages : 352

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Chemical growth methods of electronic materials are the keystone of microelectronic device processing. This book discusses the applications of metalorganic chemistry for the vapor phase deposition of compound semiconductors. Vapor phase methods used for semiconductor deposition and the materials properties that make the organometallic precursors useful in the electronics industry are discussed for a variety of materials. Topics included: * techniques for compound semiconductor growth * metalorganic precursors for III-V MOVPE * metalorganic precursors for II-VI MOVPE * single-source precursors * chemical beam epitaxy * atomic layer epitaxy Several useful appendixes and a critically selected, up-to-date list of references round off this practical handbook for materials scientists, solid-state and organometallic chemists, and engineers.

Author:
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ISBN:
Category : Science
Languages : en
Pages : 1318

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Author: Ping Jiang
Publisher: World Scientific
ISBN: 9814554065
Category :
Languages : en
Pages : 2151

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Book Description
The 21st conference proceedings continue the tradition of the ICPS series. The proceedings cover all aspects of semiconductor physics, including those related to materials, processing and devices. Plenary and invited speakers address areas of major interest.

Author: Tom Kuech
Publisher: Elsevier
ISBN: 0444633057
Category : Science
Languages : en
Pages : 1384

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Volume IIIA Basic TechniquesHandbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures.Volume IIIB Materials, Processes, and TechnologyHandbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials.Volume IIIA Basic Techniques - Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes. - Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growth - Introduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process Volume IIIB Materials, Processes, and Technology - Describes atomic level epitaxial deposition and other low temperature growth techniques - Presents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materials - Presents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials