Phase Transitions, Transfer and Nanoscale Growth of Epitaxial Bi and Bi1̳-̳x̳Sbx̳ Thin Films PDF Download
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Author: Emily Susan Walker Publisher: ISBN: Category : Languages : en Pages : 270
Book Description
Bismuth (Bi) and Bismuth-Antimony (Bi [subscript 1-x] Sb [subscript x]) alloys are considered very promising for emerging spintronic devices due to their large spin-orbit coupling, high mobility, and conductive, spin-split surface states, which are topologically non-trivial in Bi [subscript 1-x] Sb [subscript x]. Due to the long mean free path in Bi, quantum confinement effects become significant in relatively thick (~100 nm) films, resulting in the opening of a small, indirect band gap and enabling tuning of the electronic properties through the film thickness. Quantum confinement effects are expected to occur in Bi [subscript 1-x] Sb [subscript x] films at a similar length scale, which may enlarge the bulk band gap and extend the topologically insulating composition regime. When the film thickness of epitaxial Bi on Si(111) is reduced below a few nanometers, a puckered-layer allotropic structure similar to black phosphorus is stable. This puckered-layer structure is expected to exhibit unique properties, including a larger band gap and increased spin splitting, which may be useful for 2-D spintronics; however, the tendency of this structure to grow in small islands inhibits characterization. This dissertation explores the growth of both bulk-like and puckered-layer Bi and Bi [subscript 1-x] Sb [subscript x] on Si(111), and discusses how the unique properties of this system may be controlled through the growth parameters, film thickness, and composition. We find that while alloying bulk-like Bi with Sb in the quantum confinement thickness regime may increase the band gap, the crystalline orientation changes with increasing concentrations of Sb. This effect has not been observed in epitaxial Bi [subscript 1-x] Sb [subscript x] on other substrates, and significantly impacts the electronic properties of the films. In contrast, alloying Sb with nanoscale puckered-layer Bi improves the crystallinity and continuity, suggesting a promising route towards tuning the band structure of puckered-layer Bi and producing large-area films for electrical measurements. Finally, we demonstrate that epitaxial Bi and Bi [subscript 1-x] Sb [subscript x] films exhibit surprisingly weak adhesion to the Si(111) growth substrate, which may originate from the early allotropic transition. This weak adhesion enables the straightforward transfer of these films, opening a route toward the integration of epitaxial-quality Bi and Bi [subscript 1-x] Sb [subscript x] films with arbitrary substrates for novel heterostructures.
Author: Emily Susan Walker Publisher: ISBN: Category : Languages : en Pages : 270
Book Description
Bismuth (Bi) and Bismuth-Antimony (Bi [subscript 1-x] Sb [subscript x]) alloys are considered very promising for emerging spintronic devices due to their large spin-orbit coupling, high mobility, and conductive, spin-split surface states, which are topologically non-trivial in Bi [subscript 1-x] Sb [subscript x]. Due to the long mean free path in Bi, quantum confinement effects become significant in relatively thick (~100 nm) films, resulting in the opening of a small, indirect band gap and enabling tuning of the electronic properties through the film thickness. Quantum confinement effects are expected to occur in Bi [subscript 1-x] Sb [subscript x] films at a similar length scale, which may enlarge the bulk band gap and extend the topologically insulating composition regime. When the film thickness of epitaxial Bi on Si(111) is reduced below a few nanometers, a puckered-layer allotropic structure similar to black phosphorus is stable. This puckered-layer structure is expected to exhibit unique properties, including a larger band gap and increased spin splitting, which may be useful for 2-D spintronics; however, the tendency of this structure to grow in small islands inhibits characterization. This dissertation explores the growth of both bulk-like and puckered-layer Bi and Bi [subscript 1-x] Sb [subscript x] on Si(111), and discusses how the unique properties of this system may be controlled through the growth parameters, film thickness, and composition. We find that while alloying bulk-like Bi with Sb in the quantum confinement thickness regime may increase the band gap, the crystalline orientation changes with increasing concentrations of Sb. This effect has not been observed in epitaxial Bi [subscript 1-x] Sb [subscript x] on other substrates, and significantly impacts the electronic properties of the films. In contrast, alloying Sb with nanoscale puckered-layer Bi improves the crystallinity and continuity, suggesting a promising route towards tuning the band structure of puckered-layer Bi and producing large-area films for electrical measurements. Finally, we demonstrate that epitaxial Bi and Bi [subscript 1-x] Sb [subscript x] films exhibit surprisingly weak adhesion to the Si(111) growth substrate, which may originate from the early allotropic transition. This weak adhesion enables the straightforward transfer of these films, opening a route toward the integration of epitaxial-quality Bi and Bi [subscript 1-x] Sb [subscript x] films with arbitrary substrates for novel heterostructures.
Author: M Razeghi Publisher: Elsevier ISBN: 9780080444260 Category : Science Languages : en Pages : 602
Book Description
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Author: Philip Hofmann Publisher: John Wiley & Sons ISBN: 3527682031 Category : Science Languages : en Pages : 264
Book Description
A must-have textbook for any undergraduate studying solid state physics. This successful brief course in solid state physics is now in its second edition. The clear and concise introduction not only describes all the basic phenomena and concepts, but also such advanced issues as magnetism and superconductivity. Each section starts with a gentle introduction, covering basic principles, progressing to a more advanced level in order to present a comprehensive overview of the subject. The book is providing qualitative discussions that help undergraduates understand concepts even if they can?t follow all the mathematical detail. The revised edition has been carefully updated to present an up-to-date account of the essential topics and recent developments in this exciting field of physics. The coverage now includes ground-breaking materials with high relevance for applications in communication and energy, like graphene and topological insulators, as well as transparent conductors. The text assumes only basic mathematical knowledge on the part of the reader and includes more than 100 discussion questions and some 70 problems, with solutions free to lecturers from the Wiley-VCH website. The author's webpage provides Online Notes on x-ray scattering, elastic constants, the quantum Hall effect, tight binding model, atomic magnetism, and topological insulators. This new edition includes the following updates and new features: * Expanded coverage of mechanical properties of solids, including an improved discussion of the yield stress * Crystal structure, mechanical properties, and band structure of graphene * The coverage of electronic properties of metals is expanded by a section on the quantum hall effect including exercises. New topics include the tight-binding model and an expanded discussion on Bloch waves. * With respect to semiconductors, the discussion of solar cells has been extended and improved. * Revised coverage of magnetism, with additional material on atomic magnetism * More extensive treatment of finite solids and nanostructures, now including topological insulators * Recommendations for further reading have been updated and increased. * New exercises on Hall mobility, light penetrating metals, band structure
Author: Yongbing Xu Publisher: Springer ISBN: 9789400768918 Category : Science Languages : en Pages : 0
Book Description
Over two volumes and 1500 pages, the Handbook of Spintronics will cover all aspects of spintronics science and technology, including fundamental physics, materials properties and processing, established and emerging device technology and applications. Comprising 60 chapters from a large international team of leading researchers across academia and industry, the Handbook provides readers with an up-to-date and comprehensive review of this dynamic field of research. The opening chapters focus on the fundamental physical principles of spintronics in metals and semiconductors, including an introduction to spin quantum computing. Materials systems are then considered, with sections on metallic thin films and multilayers, magnetic tunnelling structures, hybrids, magnetic semiconductors and molecular spintronic materials. A separate section reviews the various characterisation methods appropriate to spintronics materials, including STM, spin-polarised photoemission, x-ray diffraction techniques and spin-polarised SEM. The third part of the Handbook contains chapters on the state of the art in device technology and applications, including spin valves, GMR and MTJ devices, MRAM technology, spin transistors and spin logic devices, spin torque devices, spin pumping and spin dynamics and other topics such as spin caloritronics. Each chapter considers the challenges faced by researchers in that area and contains some indications of the direction that future work in the field is likely to take. This reference work will be an essential and long-standing resource for the spintronics community.
Author: Mirtat Bouroushian Publisher: Springer Science & Business Media ISBN: 3642039677 Category : Science Languages : en Pages : 365
Book Description
The author provides a unified account of the electrochemical material science of metal chalcogenide (MCh) compounds and alloys with regard to their synthesis, processing and applications. Starting with the chemical fundamentals of the chalcogens and their major compounds, the initial part of the book includes a systematic description of the MCh solids on the basis of the Periodic Table in terms of their structures and key properties. This is followed by a general discussion on the electrochemistry of chalcogen species, and the principles underlying the electrochemical formation of inorganic compounds/alloys. The core of the book offers an insight into available experimental results and inferences regarding the electrochemical preparation and microstructural control of conventional and novel MCh structures. It also aims to survey their photoelectrochemistry, both from a material-oriented point of view and as connected to specific processes such as photocatalysis and solar energy conversion. Finally, the book illustrates the relevance of MCh materials to various applications of electrochemical interest such as (electro)catalysis in fuel cells, energy storage with intercalation electrodes, and ion sensing.
Author: Antoni Planes Publisher: Springer Science & Business Media ISBN: 3540316310 Category : Science Languages : en Pages : 261
Book Description
Magnetism and Structure in Functional Materials addresses three distinct but related topics: (i) magnetoelastic materials such as magnetic martensites and magnetic shape memory alloys, (ii) the magnetocaloric effect related to magnetostructural transitions, and (iii) colossal magnetoresistance (CMR) and related manganites. The goal is to identify common underlying principles in these classes of materials that are relevant for optimizing various functionalities. The emergence of apparently different magnetic/structural phenomena in disparate classes of materials clearly points to a need for common concepts in order to achieve a broader understanding of the interplay between magnetism and structure in this general class of new functional materials exhibiting ever more complex microstructure and function. The topic is interdisciplinary in nature and the contributors correspondingly include physicists, materials scientists and engineers. Likewise the book will appeal to scientists from all these areas.
Author: Eric Beaurepaire Publisher: Springer Science & Business Media ISBN: 3642044980 Category : Science Languages : en Pages : 435
Book Description
Advances in the synthesis of new materials with often complex, nano-scaled structures require increasingly sophisticated experimental techniques that can probe the electronic states, the atomic magnetic moments and the magnetic microstructures responsible for the properties of these materials. At the same time, progress in synchrotron radiation techniques has ensured that these light sources remain a key tool of investigation, e.g. synchrotron radiation sources of the third generation are able to support magnetic imaging on a sub-micrometer scale. With the Fifth Mittelwihr School on Magnetism and Synchrotron Radiation the tradition of teaching the state-of-the-art on modern research developments continues and is expressed through the present set of extensive lectures provided in this volume. While primarily aimed at postgraduate students and newcomers to the field, this volume will also benefit researchers and lecturers actively working in the field.
Author: Frank Ortmann Publisher: John Wiley & Sons ISBN: 3527337024 Category : Technology & Engineering Languages : en Pages : 434
Book Description
There are only few discoveries and new technologies in physical sciences that have the potential to dramatically alter and revolutionize our electronic world. Topological insulators are one of them. The present book for the first time provides a full overview and in-depth knowledge about this hot topic in materials science and condensed matter physics. Techniques such as angle-resolved photoemission spectrometry (ARPES), advanced solid-state Nuclear Magnetic Resonance (NMR) or scanning-tunnel microscopy (STM) together with key principles of topological insulators such as spin-locked electronic states, the Dirac point, quantum Hall effects and Majorana fermions are illuminated in individual chapters and are described in a clear and logical form. Written by an international team of experts, many of them directly involved in the very first discovery of topological insulators, the book provides the readers with the knowledge they need to understand the electronic behavior of these unique materials. Being more than a reference work, this book is essential for newcomers and advanced researchers working in the field of topological insulators.
Author: Emily Susan Walker
Author: Emily Susan Walker
Author: David Anthony King
Author: K. H. Bennemann
Author: M Razeghi
Author: Philip Hofmann
Author: Yongbing Xu
Author: Mirtat Bouroushian
Author: Antoni Planes
Author: Eric Beaurepaire
Author: Frank Ortmann