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Semiconductor Device Reliability

Semiconductor Device Reliability PDF Author: A. Christou
Publisher: Springer Science & Business Media
ISBN: 9400924828
Category : Technology & Engineering
Languages : en
Pages : 571

Book Description
This publication is a compilation of papers presented at the Semiconductor Device Reliabi lity Workshop sponsored by the NATO International Scientific Exchange Program. The Workshop was held in Crete, Greece from June 4 to June 9, 1989. The objective of the Workshop was to review and to further explore advances in the field of semiconductor reliability through invited paper presentations and discussions. The technical emphasis was on quality assurance and reliability of optoelectronic and high speed semiconductor devices. The primary support for the meeting was provided by the Scientific Affairs Division of NATO. We are indebted to NATO for their support and to Dr. Craig Sinclair, who admin isters this program. The chapters of this book follow the format and order of the sessions of the meeting. Thirty-six papers were presented and discussed during the five-day Workshop. In addi tion, two panel sessions were held, with audience participation, where the particularly controversial topics of bum-in and reliability modeling and prediction methods were dis cussed. A brief review of these sessions is presented in this book.

Semiconductor Device Reliability

Semiconductor Device Reliability PDF Author: A. Christou
Publisher: Springer Science & Business Media
ISBN: 9400924828
Category : Technology & Engineering
Languages : en
Pages : 571

Book Description
This publication is a compilation of papers presented at the Semiconductor Device Reliabi lity Workshop sponsored by the NATO International Scientific Exchange Program. The Workshop was held in Crete, Greece from June 4 to June 9, 1989. The objective of the Workshop was to review and to further explore advances in the field of semiconductor reliability through invited paper presentations and discussions. The technical emphasis was on quality assurance and reliability of optoelectronic and high speed semiconductor devices. The primary support for the meeting was provided by the Scientific Affairs Division of NATO. We are indebted to NATO for their support and to Dr. Craig Sinclair, who admin isters this program. The chapters of this book follow the format and order of the sessions of the meeting. Thirty-six papers were presented and discussed during the five-day Workshop. In addi tion, two panel sessions were held, with audience participation, where the particularly controversial topics of bum-in and reliability modeling and prediction methods were dis cussed. A brief review of these sessions is presented in this book.

Performance and Reliability of Semiconductor Devices:

Performance and Reliability of Semiconductor Devices: PDF Author: Michael Mastro
Publisher: Cambridge University Press
ISBN: 9781107408494
Category : Technology & Engineering
Languages : en
Pages : 278

Book Description
Despite the rapid development in semiconductor-based devices, there exist fundamental materials and physics issues that limit the reliability and performance of optoelectronic and electronic devices. This book examines the latest technical advancements and emerging trends in semiconductor materials and devices. The Gallium Nitride Electronic Devices chapter offers an overview of the state-of-the-art in high electron mobility transistor (HEMT) devices with interesting work on circumventing the current performance limiters in this device structure. Nano-Engineered Devices provides a snapshot of the current understanding in modifying the nanoscale specific properties of quantum dot and quantum well devices. The Performance of Semiconductor Devices chapter surveys advancements in several fields including terahertz ellipsometry, high-power multi-emitter laser bars, and thin-film transistors. Advanced Materials and Devices, highlights designs in ultrathin high-κ gate dielectrics for CMOS and related devices and also reports on the implementation of III-V materials as a replacement for the silicon channel in future CMOS technology.

Performance and Reliability of Semiconductor Devices

Performance and Reliability of Semiconductor Devices PDF Author:
Publisher:
ISBN:
Category : Gallium alloys
Languages : en
Pages : 288

Book Description


Semiconductor Power Devices

Semiconductor Power Devices PDF Author: Josef Lutz
Publisher: Springer Science & Business Media
ISBN: 3642111254
Category : Technology & Engineering
Languages : en
Pages : 539

Book Description
Semiconductor power devices are the heart of power electronics. They determine the performance of power converters and allow topologies with high efficiency. Semiconductor properties, pn-junctions and the physical phenomena for understanding power devices are discussed in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. In practice, not only the semiconductor, but also the thermal and mechanical properties of packaging and interconnection technologies are essential to predict device behavior in circuits. Wear and aging mechanisms are identified and reliability analyses principles are developed. Unique information on destructive mechanisms, including typical failure pictures, allows assessment of the ruggedness of power devices. Also parasitic effects, such as device induced electromagnetic interference problems, are addressed. The book concludes with modern power electronic system integration techniques and trends.

Reliability of Semiconductor Lasers and Optoelectronic Devices

Reliability of Semiconductor Lasers and Optoelectronic Devices PDF Author: Robert Herrick
Publisher: Woodhead Publishing
ISBN: 0128192550
Category : Technology & Engineering
Languages : en
Pages : 334

Book Description
Reliability of Semiconductor Lasers and Optoelectronic Devices simplifies complex concepts of optoelectronics reliability with approachable introductory chapters and a focus on real-world applications. This book provides a brief look at the fundamentals of laser diodes, introduces reliability qualification, and then presents real-world case studies discussing the principles of reliability and what occurs when these rules are broken. Then this book comprehensively looks at optoelectronics devices and the defects that cause premature failure in them and how to control those defects. Key materials and devices are reviewed including silicon photonics, vertical-cavity surface-emitting lasers (VCSELs), InGaN LEDs and lasers, and AlGaN LEDs, covering the majority of optoelectronic devices that we use in our everyday lives, powering the Internet, telecommunication, solid-state lighting, illuminators, and many other applications. This book features contributions from experts in industry and academia working in these areas and includes numerous practical examples and case studies. This book is suitable for new entrants to the field of optoelectronics working in R&D. • Includes case studies and numerous examples showing best practices and common mistakes affecting optoelectronics reliability written by experts working in the industry • Features the first wide-ranging and comprehensive overview of fiber optics reliability engineering, covering all elements of the practice from building a reliability laboratory, qualifying new products, to improving reliability on mature products. • Provides a look at the reliability issues and failure mechanisms for silicon photonics, VCSELs, InGaN LEDs and lasers, AIGaN LEDs, and more.

Reliability and Degradation

Reliability and Degradation PDF Author: M. J. Howes
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 444

Book Description


Semiconductor Power Devices

Semiconductor Power Devices PDF Author: Josef Lutz
Publisher:
ISBN: 9783319709185
Category : Electronic book
Languages : en
Pages :

Book Description
This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.

Failure Mechanisms in Semiconductor Devices

Failure Mechanisms in Semiconductor Devices PDF Author: E. Ajith Amerasekera
Publisher: John Wiley & Sons
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 368

Book Description
Failure Mechanisms in Semiconductor Devices Second Edition E. Ajith Amerasekera Texas Instruments Inc., Dallas, USA Farid N. Najm University of Illinois at Urbana-Champaign, USA Since the successful first edition of Failure Mechanisms in Semiconductor Devices, semiconductor technology has become increasingly important. The high complexity of today's integrated circuits has engendered a demand for greater component reliability. Reflecting the need for guaranteed performance in consumer applications, this thoroughly updated edition includes more detailed material on reliability modelling and prediction. The book analyses the main failure mechanisms in terms of cause, effects and prevention and explains the mathematics behind reliability analysis. The authors detail methodologies for the identification of failures and describe the approaches for building reliability into semiconductor devices. Their thorough yet accessible text covers the physics of failure mechanisms from the semiconductor die itself to the packaging and interconnections. Incorporating recent advances, this comprehensive survey of semiconductor reliability will be an asset to both engineers and graduate students in the field.

Reliability and Failure of Electronic Materials and Devices

Reliability and Failure of Electronic Materials and Devices PDF Author: Milton Ohring
Publisher: Academic Press
ISBN: 0080575528
Category : Technology & Engineering
Languages : en
Pages : 759

Book Description
Reliability and Failure of Electronic Materials and Devices is a well-established and well-regarded reference work offering unique, single-source coverage of most major topics related to the performance and failure of materials used in electronic devices and electronics packaging. With a focus on statistically predicting failure and product yields, this book can help the design engineer, manufacturing engineer, and quality control engineer all better understand the common mechanisms that lead to electronics materials failures, including dielectric breakdown, hot-electron effects, and radiation damage. This new edition adds cutting-edge knowledge gained both in research labs and on the manufacturing floor, with new sections on plastics and other new packaging materials, new testing procedures, and new coverage of MEMS devices. Covers all major types of electronics materials degradation and their causes, including dielectric breakdown, hot-electron effects, electrostatic discharge, corrosion, and failure of contacts and solder joints New updated sections on "failure physics," on mass transport-induced failure in copper and low-k dielectrics, and on reliability of lead-free/reduced-lead solder connections New chapter on testing procedures, sample handling and sample selection, and experimental design Coverage of new packaging materials, including plastics and composites

Study of Novel Power Semiconductor Devices for Performance and Reliability

Study of Novel Power Semiconductor Devices for Performance and Reliability PDF Author: Karthik Padmanabhan
Publisher:
ISBN:
Category :
Languages : en
Pages : 131

Book Description
In chapter 4, we also investigate the device physics behind a superjunction MOSFET structure for improved robustness. The biggest issue with a completely charge balanced MOSFET is decreased robustness in an Unclamped Inductive Switching (UIS) Circuit. The equally charged P and N pillars result in a flat electric field profile, with the peak carrier density closer to the P-N junction at the surface. This results in an almost negligible positive dynamic Rds-on effect in the MOSFET. By changing the charge profile of the P-column, either by increasing it completely or by implementing a graded profile with the heavier P on top, we can change the field profile and shift the carrier density deeper into silicon, increasing the positive dynamic Rds-on effect. Simulation and experimental results are presented to support the theory and understanding. Chapter 5 summarizes all the theories presented and the contributions made by them in the field. It also seeks to highlight future work to be done in these areas.