Author: B. N. Murdin
Publisher:
ISBN:
Category :
Languages : en
Pages : 356
Book Description
Papers Presented at the Tenth International Conference on High Pressure Semiconductor Physics (HPSP-X), Guilford, UK, 5-8 August 2002
Original Papers Presented at the 11th International Conference on High Pressure Semiconductor Physics (HPSP-XI), Berkeley, USA, 2-5 August 2004
Author: Uma D. Venkateswaran
Publisher:
ISBN:
Category :
Languages : en
Pages : 341
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 341
Book Description
Papers Presented at the 9th International Conference on High Pressure Semiconductor Physics ( HPSP-IX )
Author: HPSP (9, 2000, Sapporo)
Publisher:
ISBN:
Category :
Languages : en
Pages : 236
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 236
Book Description
HPSP 11
HPSP VI
High pressure in semiconductor physics
High pressure in semiconductor physics
Proceedings, High Pressure Semiconductor Physics (HPSP-IX)
Author:
Publisher:
ISBN:
Category : High pressure (Science)
Languages : en
Pages : 596
Book Description
Publisher:
ISBN:
Category : High pressure (Science)
Languages : en
Pages : 596
Book Description
High Pressure Semiconductor Physics, HPSP-12
SiC Power Materials
Author: Zhe Chuan Feng
Publisher: Springer Science & Business Media
ISBN: 9783540206668
Category : Science
Languages : en
Pages : 480
Book Description
In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior material properties. In many ways he was right and today there is an active industry based on SiC, with new achievements being reported every year. This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century. Overall it provides an up-to-date reference book suitable for a broad audience of newcomers, graduate students and engineers in industrial R&D.
Publisher: Springer Science & Business Media
ISBN: 9783540206668
Category : Science
Languages : en
Pages : 480
Book Description
In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior material properties. In many ways he was right and today there is an active industry based on SiC, with new achievements being reported every year. This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century. Overall it provides an up-to-date reference book suitable for a broad audience of newcomers, graduate students and engineers in industrial R&D.