Defects and Impurities in Silicon Materials PDF Download

Author: Yutaka Yoshida
Publisher: Springer
ISBN: 4431558004
Category : Technology & Engineering
Languages : en
Pages : 498

View

Book Description
This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.

Author: Xiaoge Gregory Zhang
Publisher: Springer Science & Business Media
ISBN: 0306479214
Category : Science
Languages : en
Pages : 525

View

Book Description
It may be argued that silicon, carbon, hydrogen, oxygen, and iron are among the most important elements on our planet, because of their involvement in geological, biol- ical, and technological processes and phenomena. All of these elements have been studied exhaustively, and voluminous material is available on their properties. Included in this material are numerous accounts of their electrochemical properties, ranging from reviews to extensive monographs to encyclopedic discourses. This is certainly true for C, H, O, and Fe, but it is true to a much lesser extent for Si, except for the specific topic of semiconductor electrochemistry. Indeed, given the importance of the elect- chemical processing of silicon and the use of silicon in electrochemical devices (e. g. , sensors and photoelectrochemical cells), the lack of a comprehensive account of the electrochemistry of silicon in aqueous solution at the fundamental level is surprising and somewhat troubling. It is troubling in the sense that the non-photoelectrochemistry of silicon seems “to have fallen through the cracks,” with the result that some of the electrochemical properties of this element are not as well known as might be warranted by its importance in a modern technological society. Dr. Zhang’s book, Electrochemical Properties of Silicon and Its Oxide, will go a long way toward addressing this shortcoming. As with his earlier book on the elect- chemistry of zinc, the present book provides a comprehensive account of the elect- chemistry of silicon in aqueous solution.

Author: Roderick A.B. Devine
Publisher: Springer Science & Business Media
ISBN: 1461310318
Category : Technology & Engineering
Languages : en
Pages : 552

View

Book Description
The contents of this volume represent most of the papers presented either orally or as posters at the international conference held in Les rd th Arcs, Savoie, from June 29 to July 3 1987. The declared objective of the conference was to bring together specialists working in various fields, both academic and applied, to examine the state of our under standing of the physics of amorphous sioz from the point of view of its structure, defects (both intrinsic and extrinsic), its ability to trans port current and to trap charges, its sensitivity to irradiation, etc. For this reason, the proceedings is divided, as was the conference schedule, into a number of sections starting from a rather academic viewpoint of the internal structure of idealized Si0 and progressing 2 towards subjects of increasing technological importance such as charge transport and trapping and breakdown in thin films. The proceedings terminates with a section on novel applications of amorphous SiOz and in particular, buried oxide layers formed by ion implantation. Although every effort was made at the conference to ensure that each presentation occured in its most obvious session, in editing the proceedings we have taken the liberty of changing the order where it seems that a paper was in fact more appropriate to an alternative section. In any event, because of the natural overlap of subjects, many papers could have been suitably placed in several different sections.

Author:
Publisher: Academic Press
ISBN: 0080864392
Category : Technology & Engineering
Languages : en
Pages : 711

View

Book Description
This volume reviews the latest understanding of the behavior and roles of oxygen in silicon, which will carry the field into the ULSI era from the experimental and theoretical points of view. The fourteen chapters, written by recognized authorities representing industrial and academic institutions, cover thoroughly the oxygen related phenomena from the crystal growth to device fabrication processes, as well as indispensable diagnostic techniques for oxygen. - Comprehensive study of the behavior of oxygen in silicon - Discusses silicon crystals for VLSI and ULSI applications - Thorough coverage from crystal growth to device fabrication - Edited by technical experts in the field - Written by recognized authorities from industrial and academic institutions - Useful to graduate students, scientists in other disciplines, and active participants in the arena of silicon-based microelectronics research - 297 original line drawings

Author: A. Borghesi
Publisher: North Holland
ISBN:
Category : Science
Languages : en
Pages : 624

View

Book Description
Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry.The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.

Author: Dongqing Li
Publisher: Springer Science & Business Media
ISBN: 0387324682
Category : Technology & Engineering
Languages : en
Pages : 2242

View

Book Description
Covering all aspects of transport phenomena on the nano- and micro-scale, this encyclopedia features over 750 entries in three alphabetically-arranged volumes including the most up-to-date research, insights, and applied techniques across all areas. Coverage includes electrical double-layers, optofluidics, DNC lab-on-a-chip, nanosensors, and more.

Author: Peter Jutzi
Publisher: John Wiley & Sons
ISBN: 3527611215
Category : Science
Languages : de
Pages : 506

View

Book Description
The combined results from an international research project involving 40 interdisciplinary groups, providing the latest knowledge from the past few years. Adopting an application-oriented approach, this handy reference is a must-have for every silicon chemist, whether working in inorganic, organic, physical or polymer chemistry, materials science or physics.

Author: Craig E. Manning
Publisher: John Wiley & Sons
ISBN: 1119508231
Category : Science
Languages : en
Pages : 373

View

Book Description
Carbon in Earth's fluid envelopes - the atmosphere, biosphere, and hydrosphere, plays a fundamental role in our planet's climate system and a central role in biology, the environment, and the economy of earth system. The source and original quantity of carbon in our planet is uncertain, as are the identities and relative importance of early chemical processes associated with planetary differentiation. Numerous lines of evidence point to the early and continuing exchange of substantial carbon between Earth's surface and its interior, including diamonds, carbon-rich mantle-derived magmas, carbonate rocks in subduction zones and springs carrying deeply sourced carbon-bearing gases. Thus, there is little doubt that a substantial amount of carbon resides in our planet's interior. Yet, while we know it must be present, carbon's forms, transformations and movements at conditions relevant to the interiors of Earth and other planets remain uncertain and untapped. Volume highlights include: - Reviews key, general topics, such as carbonate minerals, the deep carbon cycle, and carbon in magmas or fluids - Describes new results at the frontiers of the field with presenting results on carbon in minerals, melts, and fluids at extreme conditions of planetary interiors - Brings together emerging insights into carbon's forms, transformations and movements through study of the dynamics, structure, stability and reactivity of carbon-based natural materials - Reviews emerging new insights into the properties of allied substances that carry carbon, into the rates of chemical and physical transformations, and into the complex interactions between moving fluids, magmas, and rocks to the interiors of Earth and other planets - Spans the various chemical redox states of carbon, from reduced hydrocarbons to zero-valent diamond and graphite to oxidized CO2 and carbonates - Captures and synthesizes the exciting results of recent, focused efforts in an emerging scientific discipline - Reports advances over the last decade that have led to a major leap forward in our understanding of carbon science - Compiles the range of methods that can be tapped tap from the deep carbon community, which includes experimentalists, first principles theorists, thermodynamic modelers and geodynamicists - Represents a reference point for future deep carbon science research Carbon in Planetary Interiors will be a valuable resource for researchers and students who study the Earth's interior. The topics of this volume are interdisciplinary, and therefore will be useful to professionals from a wide variety of fields in the Earth Sciences, such as mineral physics, petrology, geochemistry, experimentalists, first principles theorists, thermodynamics, material science, chemistry, geophysics and geodynamics.

Author: Deren Yang
Publisher: Springer
ISBN: 9783662564714
Category : Technology & Engineering
Languages : en
Pages : 0

View

Book Description
The utilization of sun light is one of the hottest topics in sustainable energy research. To efficiently convert sun power into a reliable energy – electricity – for consumption and storage, silicon and its derivatives have been widely studied and applied in solar cell systems. This handbook covers the photovoltaics of silicon materials and devices, providing a comprehensive summary of the state of the art of photovoltaic silicon sciences and technologies. This work is divided into various areas including but not limited to fundamental principles, design methodologies, wafering techniques/fabrications, characterizations, applications, current research trends and challenges. It offers the most updated and self-explanatory reference to all levels of students and acts as a quick reference to the experts from the fields of chemistry, material science, physics, chemical engineering, electrical engineering, solar energy, etc..

Author: Cullis
Publisher: CRC Press
ISBN: 9780854981786
Category : Technology & Engineering
Languages : en
Pages : 820

View

Book Description
The various forms of microscopy and related microanalytical techniques are making unique contributions to semiconductor research and development that underpin many important areas of microelectronics technology. Microscopy of Semiconducting Materials 1987 highlights the progress that is being made in semiconductor microscopy, primarily in electron probe methods as well as in light optical and ion scattering techniques. The book covers the state of the art, with sections on high resolution microscopy, epitaxial layers, quantum wells and superlattices, bulk gallium arsenide and other compounds, properties of dislocations, device silicon and dielectric structures, silicides and contacts, device testing, x-ray techniques, microanalysis, and advanced scanning microscopy techniques. Contributed by numerous international experts, this volume will be an indispensable guide to recent developments in semiconductor microscopy for all those who work in the field of semiconducting materials and research development.