Optical Studies of Semiconductor Heterostructures in Pulsed Magnetic Fields PDF Download

Author: Yongmin Kim
Publisher:
ISBN:
Category : Heterostructures
Languages : en
Pages : 354

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Author: John Robert Schrieffer
Publisher: World Scientific
ISBN: 9814548499
Category :
Languages : en
Pages : 810

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Book Description
The purpose of the conference was to bring together experts in research areas of science in which high magnetic fields play an important role, to critically assess the current status of research in these areas, and to discuss promising new directions in science, as well as applications which are at the forefront of these fields.The program consisted of talks given by leading experts presenting overviews and critical assessments of certain areas, including semiconductors, the quantum Hall effect, heavy fermions, superconductivity, organic solids, chemical systems, and the generation and use of high magnetic fields in basic and applied research.

Author: Martin Kneip
Publisher: GRIN Verlag
ISBN: 3640269454
Category : Science
Languages : en
Pages : 274

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Doctoral Thesis / Dissertation from the year 2008 in the subject Physics - Theoretical Physics, grade: sehr gut (1,0), University of Dortmund, language: English, abstract: In this thesis spin dynamics in (Zn,Mn)Se/(Zn,Be)Se and (Cd,Mn)Te/(Cd,Mg)Te DMS quantum well heterostructures with a type-I band alignment are studied, where the carriers are quantum confined. Especially the important role of free carriers in heating of the Mn-system, by its interaction with photoexcited carriers with excess kinetic energy, and in the cooling of the Mn-system in the presence of cold background carriers, provided by modulation doping, is established. The studies are separated in three chapters. In the fourth chapter of this thesis, new results on energy and spin transfer between free carriers and Mn-ion system are presented. Contributions of direct heating of the Mn-system by photocarriers and indirect heating via nonequilibrium phonons are distinguished and their competition is discussed. In the fifth chapter dynamics of spin-lattice relaxation of magnetic Mn-ions in DMS QW heterostructures is investigated and new experimental studies on (Zn,Mn)Se/(Zn,Be)Se heterostructures are shown. Crucial for spintronic devices is the ability to tune the spin relaxation time precisely, as the spin relaxation time is important in double respects. On the one hand spin polarization must be conserved over long times and distances, if the spin shall be processed or stored in a region, which is spatial separated from the spin-injector. Especially for the possibility of utilizing spins as quantum bits for quantum information processing, long spin polarization is needed. On the other hand short spin relaxation time is needed for fast switching between different spin-states. For instance semiconductor lasers can be switched off extremely fast by reorientation of spin. This very relevant topic is devoted the sixth chapter, before the thesis is summarized in the last chapter. Especially for one of the biggest drawbacks for precise tuning, that the magnetization dynamics in DMS cannot be controlled separately from the static magnetization, solutions via electric field control of the magnetization dynamics or via the technological concept of “digital alloying” are presented.precise tuning, that the magnetization dynamics in DMS cannot be controlled separately from the static magnetization, solutions via electric field control of the magnetization dynamics or via the technological concept of “digital alloying” are presented.

Author: D.J. Lockwood
Publisher: Springer Science & Business Media
ISBN: 9401119120
Category : Science
Languages : en
Pages : 443

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Book Description
Remarkable advances in semiconductor growth and processing technologies continue to have a profound impact on condensed-matter physics and to stimulate the invention of novel optoelectronic effects. Intensive research on the behaviors of free carriers has been carried out in the two-dimensional systems of semiconductor heterostructures and in the one and zero-dimensional systems of nanostructures created by the state-of-the-art fabrication methods. These studies have uncovered unexpected quantum mechanical correlations that arise because of the combined effects of strong electron-electron interactions and wave function confinement associated with reduced dimensionality. The investigations of these phenomena are currently at the frontiers of condensed-matter physics. They include areas like the fractional quantum Hall effect, the dynamics of electrons on an ultra short (femtosecond) time scale, electron behavior in quantum wires and dots, and studies of electron tunneling phenomena in ultra small semiconductor structures. Optical techniques have made important contributions to these fields in recent years, but there has been no coherent review of this work until now. The book provides an overview of these recent developments that will be of interest to semiconductor materials scientists in university, government and industrial laboratories.

Author: Noboru Miura
Publisher: OUP Oxford
ISBN: 0198517564
Category : Science
Languages : en
Pages : 376

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This book summarizes most of the fundamental physical phenomena which semiconductors and their modulated structures exhibit in high magnetic fields. Readers can learn not only the basic theoretical background but also the present state of the art from the most advanced data in this rapidly growing research area.

Author: Fritz Henneberger
Publisher: Wiley-VCH
ISBN:
Category : Science
Languages : en
Pages : 608

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Book Description
The contributions of leading international experts assembled in this volume provide an authoritative description of current research in the highly topical area of the optical properties of semiconductor structures in the nanometer range. .

Author: M. Balkanski
Publisher: Springer Science & Business Media
ISBN: 9401100896
Category : Technology & Engineering
Languages : en
Pages : 462

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Book Description
A recent major development in high technology, and one which bears considerable industrial potential, is the advent of low-dimensional semiconductor quantum structures. The research and development activity in this field is moving fast and it is thus important to afford scientists and engineers the opportunity to get updated by the best experts in the field. The present book draws together the latest developments in the fabrication technology of quantum structures, as well as a competent and extensive review of their fundamental properties and some remarkable applications. The book is based on a set of lectures that introduce different aspects of the basic knowledge available, it has a tutorial content and could be used as a textbook. Each aspect is reviewed, from elementary concepts up to the latest developments. Audience: Undergraduates and graduates in electrical engineering and physics schools. Also for active scientists and engineers, updating their knowledge and understanding of the frontiers of the technology.

Author: Amalia Patane
Publisher: Springer Science & Business Media
ISBN: 3642233511
Category : Technology & Engineering
Languages : en
Pages : 384

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Book Description
The book describes the fundamentals, latest developments and use of key experimental techniques for semiconductor research. It explains the application potential of various analytical methods and discusses the opportunities to apply particular analytical techniques to study novel semiconductor compounds, such as dilute nitride alloys. The emphasis is on the technique rather than on the particular system studied.

Author: Zhe Chuan Feng
Publisher: World Scientific
ISBN: 9789810209889
Category : Science
Languages : en
Pages : 336

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Book Description
1. Carrier transport in artificially structured two-dimensional semiconductor systems / W. Walukiewicz -- 2. Miniband conduction in semiconductor superlattices / A. Sibille, J.F. Palmier, C. Minot -- 3. Barrier width dependence of optical properties in semiconductor superlattices / J.J. Song, J.F. Zhou and J.M. Jacob -- 4. Radiative processes in GaAs/AlGaAs heterostructures / P.O. Holtz, B. Monemar and J. Merz -- 5. Type-I-type-II transition in GaAs/AlAs superlattices / G.H. Li -- 6. Photoluminescence studies of interface roughness in GaAs/AlAs quantum well structures / D. Gammon, B.V. Shanabrook and D.S. Katzer -- 7. Optical and magneto-optical properties of narrow In[symbol]Ga[symbol]As-GaAs quantum wells / D.C. Reynolds and K.R. Evans -- 8. Growth and studies of antimony based III-V compounds by magnetron sputter epitaxy using metalorganic and solid elemental sources / J.B. Webb and R. Rousina -- 9. Properties of Cd[symbol]Mn[symbol]Te films and Cd[symbol]Mn[symbol]Te-CdTe superlattices grown by pulsed laser evaporation and epitaxy / J.M. Wrobel and J.J. Dubowski -- 10. Zn[symbol]Cd[symbol]Se[symbol]Te[symbol] quatenary II-VI wide bandgap alloys and heterostructures / R.E. Nahory, M.J.S.P. Brasil and M.C. Tamargo -- 11. Intersubband transitions in SiGe/Si quantum structures/ R.P.G. Karunasiri, K.L. Wang and J.S. Park -- 12. High-temperature discrete devices in 6H-SiC: sublimation epitaxial growth, device technology and electrical performance / M.M. Anikin [und weitere]

Author: D.D. Awschalom
Publisher: Springer Science & Business Media
ISBN: 366205003X
Category : Technology & Engineering
Languages : en
Pages : 321

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Book Description
The past few decades of research and development in solid-state semicon ductor physics and electronics have witnessed a rapid growth in the drive to exploit quantum mechanics in the design and function of semiconductor devices. This has been fueled for instance by the remarkable advances in our ability to fabricate nanostructures such as quantum wells, quantum wires and quantum dots. Despite this contemporary focus on semiconductor "quantum devices," a principal quantum mechanical aspect of the electron - its spin has it accounts for an added quan largely been ignored (except in as much as tum mechanical degeneracy). In recent years, however, a new paradigm of electronics based on the spin degree of freedom of the electron has begun to emerge. This field of semiconductor "spintronics" (spin transport electron ics or spin-based electronics) places electron spin rather than charge at the very center of interest. The underlying basis for this new electronics is the intimate connection between the charge and spin degrees of freedom of the electron via the Pauli principle. A crucial implication of this relationship is that spin effects can often be accessed through the orbital properties of the electron in the solid state. Examples for this are optical measurements of the spin state based on the Faraday effect and spin-dependent transport measure ments such as giant magneto-resistance (GMR). In this manner, information can be encoded in not only the electron's charge but also in its spin state, i. e.