Author: Robert Edward Klinger
Publisher:
ISBN:
Category :
Languages : en
Pages : 244
Book Description
Optical Spectroscopy Studies of the Reactive Ion Etching of Silicon and Gallium Arsenide in Halomethane-based Discharges
Author: Robert Edward Klinger
Publisher:
ISBN:
Category :
Languages : en
Pages : 244
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 244
Book Description
Optical Spectroscopy Studies of the Reactive Ion Etching of Gallium Arsenide in Dichlorodifloromethane/oxygen/argon Discharges
American Doctoral Dissertations
Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 552
Book Description
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 552
Book Description
Comprehensive Dissertation Index
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 764
Book Description
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 764
Book Description
Dissertation Abstracts International
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 564
Book Description
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 564
Book Description
Optical Spectroscopy Studies of Ion Bombarded Gallium Arsenide and Vanadium Carbide Thin Films
Author: Kudakwashe Jakata
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 168
Book Description
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 168
Book Description
Glow Discharge Optical Spectroscopy of ION Implanted Gallium Arsenide
Author: Suk Puangthum (2LT, RTAF.)
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 150
Book Description
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 150
Book Description
Glow Discharge Optical Spectroscopy of Ion Implanted Gallium Arsenide
Author: Kenneth R. Williamson (CAPT, USAF.)
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 128
Book Description
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 128
Book Description
Selective Reactive Ion Etching of Gallium Arsenide/aluminum Gallium Arsenide in Silicon Tetrachloride/silicon Tetrafluoride Plasmas
Author: William Harris Guggina
Publisher:
ISBN:
Category :
Languages : en
Pages : 92
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 92
Book Description
Glow Discharge Optical Spectroscopy of Ion Implanted Gallium Arsenide
Author: Kenneth R. Williamson
Publisher:
ISBN:
Category :
Languages : en
Pages : 86
Book Description
Glow Discharge Optical Spectroscopy (GDOS) was used as a technique for obtaining impurity concentration profiles of annealed and unannealed ion implanted GaAs samples. Germanium, magnesium, and boron ions were implanted at energies of 60keV or 120keV and fluences of 1 or 5 times 10 to the 15th power/sq.cm. The samples were sputtered in a dc glow discharge. The intensities of strong emission lines (proportional to concentration) were calibrated using pure elements as standards, providing impurity concentration profiles. (Author).
Publisher:
ISBN:
Category :
Languages : en
Pages : 86
Book Description
Glow Discharge Optical Spectroscopy (GDOS) was used as a technique for obtaining impurity concentration profiles of annealed and unannealed ion implanted GaAs samples. Germanium, magnesium, and boron ions were implanted at energies of 60keV or 120keV and fluences of 1 or 5 times 10 to the 15th power/sq.cm. The samples were sputtered in a dc glow discharge. The intensities of strong emission lines (proportional to concentration) were calibrated using pure elements as standards, providing impurity concentration profiles. (Author).