Author: Hakki Ufuk AlpayPublisher:
ISBN:
Category :
Languages : en
Pages : 108
Book Description
Optical Spectroscopy Studies of the Reactive Ion Etching of Gallium Arsenide in Dichlorodifloromethane/oxygen/argon Discharges
Author: Hakki Ufuk AlpayOptical Spectroscopy Studies of the Reactive Ion Etching of Silicon and Gallium Arsenide in Halomethane-based Discharges
Author: Robert Edward KlingerPublisher:
ISBN:
Category :
Languages : en
Pages : 244
Book Description
Predictable Reactive Ion Etching of Gallium Arsenide and Aluminum Gallium Arsenide in Hydrogen Chloride/argon Radio Frequency Discharges
Author: Karen Jean NordhedenPublisher:
ISBN:
Category :
Languages : en
Pages : 106
Book Description
Optical Spectroscopy Studies of Ion Bombarded Gallium Arsenide and Vanadium Carbide Thin Films
Author: Kudakwashe JakataPublisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 168
Book Description
Glow Discharge Optical Spectroscopy of ION Implanted Gallium Arsenide
Author: Suk Puangthum (2LT, RTAF.)Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 150
Book Description
Glow Discharge Optical Spectroscopy of Ion Implanted Gallium Arsenide
Author: Kenneth R. Williamson (CAPT, USAF.)Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 128
Book Description
Glow Discharge Optical Spectroscopy of Ion Implanted Gallium Arsenide
Author: Kenneth R. WilliamsonPublisher:
ISBN:
Category :
Languages : en
Pages : 86
Book Description
Glow Discharge Optical Spectroscopy (GDOS) was used as a technique for obtaining impurity concentration profiles of annealed and unannealed ion implanted GaAs samples. Germanium, magnesium, and boron ions were implanted at energies of 60keV or 120keV and fluences of 1 or 5 times 10 to the 15th power/sq.cm. The samples were sputtered in a dc glow discharge. The intensities of strong emission lines (proportional to concentration) were calibrated using pure elements as standards, providing impurity concentration profiles. (Author).
A Study of Reactive Ion Etching of Gallium Arsenide in Mixtures of Methane and Hydrogen Plasmas
Author: Hossein Fariborz SahafiOptical Studies of Ion-bombarded Gallium Arsenide
Author: Guofu FengPublisher:
ISBN:
Category : Semiconductor doping
Languages : en
Pages : 338
Book Description
Chlorine Reactive Ion Etching of Gallium Arsenide
Author: Joseph T. TustinPublisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 222
Book Description