Author: Chien-Hsiung PengPublisher:
ISBN:
Category : Ferroelectric thin films
Languages : en
Pages : 452
Book Description
Optical Property Studies and Metalorganic Chemical Vapor Deposition of Ferroelectric Thin Films
Author: Chien-Hsiung PengPublisher:
ISBN:
Category : Ferroelectric thin films
Languages : en
Pages : 452
Book Description
Ferroelectric Thin Films
Author: Carlos Paz de AraujoPublisher: Taylor & Francis US
ISBN: 9782884491976
Category : Science
Languages : en
Pages : 598
Book Description
The impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties. It is befitting, therefore, that the first of a set of three complementary books with the general title Integrated Ferroelectric Devices and Technologies focuses on the synthesis of thin film ferroelectric materials and their basic properties. Because it is a basic introduction to the chemistry, materials science, processing, and physics of the materials from which integrated ferroelectrics are made, newcomers to this field as well as veterans will find this book self-contained and invaluable in acquiring the diverse elements requisite to success in their work in this area. It is directed at electronic engineers and physicists as well as process and system engineers, ceramicists, and chemists involved in the research, design, development, manufacturing, and utilization of thin film ferroelectric materials.
Growth, Microstructure and Optical Properties of Epitaxial Lithium Tantalate Thin Films by Metalorganic Chemical Vapor Deposition
Author: Huyang XieMetal-Organic Chemical Vapor Deposition of Electronic Ceramics II: Volume 415
Author: Seshu B. DesuPublisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 290
Book Description
The use of high-performance ceramic materials in microelectronics holds the potential for the development of a wide range of novel, high-value products. For example, ferroelectric ceramic capacitors are key to the development of high-density ferroelectric nonvolatile memory (FRAM). High-dielectric constant para-electric capacitors are potentially useful for the production of high-density dynamic random access memory (DRAM) and for decoupling capacitors in high-speed microprocessors. Electro-optic materials are useful as waveguides, tunable filters and switches in advance communication applications. Researchers come together in this book to discuss both the application of metal-organic chemical vapor deposited (MOCVD) materials to microelectronics and the 'nuts and bolts' of the technique. A wide variety of opto-electronic, superconducting, ferroelectric and other advanced ceramic materials are discussed. Problems of dealing with low-volatility precursors, design of new precursors, and characterization of CVD processes are addressed. Topics include: nonoxide ceramics; precursor chemistry and delivery; process analysis and characterization; and oxide ceramics.
Structural, Dielectric, and Optical Properties of Potassium Tantalate Niobate Thin Films Prepared by Metalorganic Chemical Vapor Deposition
Author: Barbara Michelle NicholsPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
The structure-property relations of potassium tantalate niobate (KTaxNb1-xO 3) thin films have been investigated to assess their viability as nonlinear optical materials. Single phase, epitaxial films were deposited by low pressure metalorganic chemical vapor deposition over the entire solid solution range. Under optimized growth conditions, the composition of the films could be controlled within 5 atomic percent.
Metal-organic Chemical Vapor Deposition of Electronic Ceramics
Author: Metal Based Thin Films for Electronics
Author: Klaus WetzigPublisher: John Wiley & Sons
ISBN: 3527606475
Category : Science
Languages : en
Pages : 388
Book Description
This up-to-date handbook covers the main topics of preparation, characterization and properties of complex metal-based layer systems. The authors -- an outstanding group of researchers -- discuss advanced methods for structure, chemical and electronic state characterization with reference to the properties of thin functional layers, such as metallization and barrier layers for microelectronics, magnetoresistive layers for GMR and TMR, sensor and resistance layers. As such, the book addresses materials specialists in industry, especially in microelectronics, as well as scientists, and can also be recommended for advanced studies in materials science, analytics, surface and solid state science.
Ferroelectric Lithium Tantalate Thin Film for Optical Use by Metalorganic Chemical Vapor Deposition
Author: Huyang XieThin Film Ferroelectric Materials and Devices
Author: R. RameshPublisher: Springer Science & Business Media
ISBN: 146156185X
Category : Technology & Engineering
Languages : en
Pages : 250
Book Description
The past five years have witnessed some dramatic developments in the general area of ferroelectric thin films materials and devices. Ferroelectrics are not new materials by any stretch ofimagination. Indeed, they have been known since the early partofthis century and popular ferroelectric materials such as Barium Titanate have been in use since the second world war. In the late sixties and seventies, a considerable amountofresearch and development effort was made to create a solid state nonvolatile memory using ferroelectrics in a vary simple matrix-addressed scheme. These attempts failed primarily due to problems associated with either the materials ordue to device architectures. The early eighties saw the advent of new materials processing approaches, such as sol-gel processing, that enabled researchers to fabricate sub-micron thin films of ferroelectric materials on a silicon substrate. These pioneering developments signaled the onsetofa revival in the areaofferroelectric thin films, especially ferroelectric nonvolatile memories. Research and development effort in ferroelectric materials and devices has now hit a feverish pitch, Many university laboratories, national laboratories and advanced R&D laboratories oflarge IC manufacturers are deeply involved in the pursuit of ferroelectric device technologies. Many companies worldwide are investing considerable manpower and resources into ferroelectric technologies. Some have already announced products ranging from embedded memories in micro controllers, low density stand-alone memories, microwave circuit elements, andrf identification tags. There is now considerable optimism that ferroelectric devices andproducts will occupy a significant market-share in the new millennium.
Ferroelectric Thin Films VIII: Volume 596
Author: R. W. SchwartzPublisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 610
Book Description
This book, the eighth in a popular series from MRS, features the latest technical information on ferroelectric thin films from an international mix of academia, industry and government organizations. Recent results for DRAM and FERAM devices, as well as enhancements in material performance for these applications, are presented. Significant advances in understanding leakage current, frequency dependence of the coercive field, hydrogen annealing effects, piezoelectric constants, and domain switching responses are highlighted. The development of ferroelectric thin films for piezoelectric applications are also reviewed, as are improved film-fabrication procedures including chemical vapor deposition and chemical solution deposition. Topics include: BST thin films and DRAM; integration and electrodes; Bi-based thin-film ferroelectrics; Pb-based thin-film ferroelectrics; fundamental properties of thin-film ferroelectrics; ferroelectric gate materials and devices; and piezoelectric, pyro-electric and capacitor devices and novel processing strategies.